• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.190-193
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• 2013

Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• 센서학회지
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• 제31권1호
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• pp.1-5
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• 2022

In this paper, the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector with high sensitivity in the 408 nm - 941 nm range are presented. High sensitivity is important for photodetectors, which are used in several scientific and industrial applications. Owing to its inherent amplifying characteristics, the GBT MOSFET-type photodetector exhibits high sensitivity. The presented GBT MOSFET-type photodetector was designed and fabricated via a standard 0.18 ㎛ complementary metal-oxide-semiconductor (CMOS) process, and its characteristics were analyzed. The photodetector was analyzed with respect to its width to length (W/L) ratio, bias voltage, and incident-light wavelength. It was confirmed experimentally that the presented GBT MOSFET-type photodetector has over 100 times higher sensitivity than a PN-junction photodiode with the same area in the 408 nm - 941 nm range.

• 한국항공우주학회지
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• 제42권11호
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• pp.981-987
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• 2014

DC/DC 컨버터는 임의의 직류전원을 부하가 요구하는 형태의 직류전원으로 변환시키는 효율이 높은 전력변환기이다. DC/DC 컨버터는 MOSFET(산화물-반도체 전계 효과 트랜지스터), PWM-IC(펄스폭 변조 집적회로) 제어기, 인덕터, 콘덴서 등으로 구성되어있다. MOSFET는 스위치 기능을 수행하는데 코발트 60 ($^{60}Co$) 저준위 감마발생기를 이용한 TID 실험에서 방사선의 영향으로 문턱전압과 항복전압의 변화와 SEGR 실험에 적용된 5종류의 중이온 입자는 MOSFET의 게이트(gate)에 영향을 주어 게이트가 파괴된다. MOSFET의 TID 실험은 40 Krad 까지 수행하였으며, SEGR 실험은 제어보드를 구현한 후 LET(MeV/mg/$cm^2$)별 cross section($cm^2$)을 연구하는데 있다.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.713-717
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• 2011

This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 F
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• pp.2568-2571
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• 1999

Recently, new trend in telecommunication device is to apply low voltage, about 3.3V-1.5V. However, it is undesirable in view of high efficiency and power desity which is the most important requirement in the distributed power system. Rectification loss in the output stage in on-board converter for distributed power system are constrained to obtain high efficience at low output voltage power suppies. This paper is investigated conduction power loss in synchronouss rectifier with a parallel -connected Schottky Barrier Diode(SBD). Conduction losses are calculated for both MOSFET and SBD respectively. The SBD conduction power loss dissipates more than the MOSFET rectifier conduction power loss.

• 센서학회지
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• 제31권4호
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• pp.271-277
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• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.697-705
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• 2014

A single chip Programmable AC to DC Power Converter, consisting of wide band gap SiC MOSFET and SiC diodes, has been proposed which converts high frequency ac voltage to a conditioned dc output voltage at user defined given power level. The converter has high conversion efficiency because of negligible reverse recovery current in SiC diode and SiC MOSFET. High frequency operation reduces the need of bigger size inductor. Lead inductors are enough to maintain current continuity. A complete electrical analysis, die area estimation and thermal analysis of the converter has been presented. It has been found that settling time and peak overshoot voltage across the device has reduced significantly when SiC devices are used with respect to Si devices. Reduction in peak overshoot also increases the converter efficiency. The total package substrate dimension of the converter circuit is only $5mm{\times}5mm$. Thermal analysis performed in the paper shows that these devices would be very useful for use as miniaturized power converters for load currents of up to 5-7 amp, keeping the package thermal conductivity limitation in mind. The converter is ideal for voltage requirements for sub-5 V level power supplies for high temperatures and space electronics systems.

• 전력전자학회논문지
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• 제8권1호
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• pp.24-29
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• 2003

현재 120kV/70A 고압 스위치가 KSTAR의 NBI 시스템에 사용되기 위하여 대전의 원자력 연구소에 설치되어 있다. NBI 시스템은 아크 발생시 이온 소스를 보호하기 위하여 전압의 빠른 차단 및 빔 전류의 유시를 위하여 전압의 빠른 턴온이 요구된다. 따라서 고압 스위치와 아크 검출회로는 NBI 시스템에서 중요한 부분을 차지하고 있다. 고압의 반도체 스위치는 NBI 시스템 뿐만 아니라 산업전반에서 요구되고 있다. NBI 시스템에 적용된 120kV/70A 고압 스위치는 100개의 MOSFET 소자를 직렬연결하였으며 본 논문에서 제안한 바이어스 전원이 없는 간단한 구동회고를 사용하였다. 실험식에서의 시험 및 현장에서 100kW의 모의 저항부하와 NBI 이온 소스에 적용한 실험결과를 제시하였다. 본 논문은 120kV/70A 고압 MOSFET 스위치와 간단한 게이트 구동회로의 설계를 제시하였으며, 제작 및 시험기간 동안의 문제점 및 해결방안에 대해서도 제시하였다.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.47-51
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• 2013

A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.