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http://dx.doi.org/10.46670/JSST.2022.31.1.1

Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector with High Sensitivity  

Jang, Juneyoung (School of Electronic and Electrical Engineering, Kyungpook National Unversity)
Choi, Pyung (School of Electronic and Electrical Engineering, Kyungpook National Unversity)
Lyu, Hong-Kun (Division of Electronics and Information System, ICT Research Institute, DGIST)
Shin, Jang-Kyoo (School of Electronic and Electrical Engineering, Kyungpook National Unversity)
Publication Information
Journal of Sensor Science and Technology / v.31, no.1, 2022 , pp. 1-5 More about this Journal
Abstract
In this paper, the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector with high sensitivity in the 408 nm - 941 nm range are presented. High sensitivity is important for photodetectors, which are used in several scientific and industrial applications. Owing to its inherent amplifying characteristics, the GBT MOSFET-type photodetector exhibits high sensitivity. The presented GBT MOSFET-type photodetector was designed and fabricated via a standard 0.18 ㎛ complementary metal-oxide-semiconductor (CMOS) process, and its characteristics were analyzed. The photodetector was analyzed with respect to its width to length (W/L) ratio, bias voltage, and incident-light wavelength. It was confirmed experimentally that the presented GBT MOSFET-type photodetector has over 100 times higher sensitivity than a PN-junction photodiode with the same area in the 408 nm - 941 nm range.
Keywords
Gate/body-tied; Photodetector; MOSFET; Sensitivity; PN-junction photodiode; Wavelength;
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Times Cited By KSCI : 3  (Citation Analysis)
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