Electrical Characteristic of Power MOSFET with Zener Diode for Battery Protection IC |
Kim, Ju-Yeon
(Quality Team, ITM Semiconductor Co., Ltd.)
Park, Seung-Uk (Quality Team, ITM Semiconductor Co., Ltd.) Kim, Nam-Soo (School of Electrical and Computer Engineering, Chungbuk National University) Park, Jung-Woong (School of Electrical and Computer Engineering, Chungbuk National University) Lee, Kie-Yong (School of Electrical and Computer Engineering, Chungbuk National University) Lee, Hyung-Gyoo (School of Electrical and Computer Engineering, Chungbuk National University) |
1 | K. Sakamoto, N. Fuchigami, K. Takagawa, and S. Ohtaka, (1999), "A three-terminal intelligent power MOSFET with built-in reverse battery protection for automotive applications", IEEE Transaction on Electron Devices, Vol. 46, No. 11, pp.2228-2234. DOI ScienceOn |
2 | Namsoo Kim, Hyunggyoo Lee, Cuizhiyuan, (2005), "Effect of channel doping levels in LDMOSFET on the transfer characteristic of CMOS inverter", Proc. ISDRS 2005, pp. 356-357. |
3 | J. Barak, A. Haran, D. David, and S. Rapaport, (2008), "A doublepower- MOSFET circuit for protection from single event burnout", IEEE Transactions on nuclear science, Vol. 55, No. 6, pp. 3467-3472. DOI ScienceOn |
4 | T. Kubota, Kiminori Watanabe, Kumiko karouji, Mitsur Ueno, Usuke Kawaguchi, and Akio Nakagawa, (2003), "Cost-effective approach in LDMOS with partial 0.35 design into conventional 0.6 process", Proc. ISPSD, pp. 245-248. |
5 | B. Smith, J. Xu, A. Chellamuthu, B. Amey, S. Pendharkar, and T. Efland, (2004), "Peripheral motor drive PIC concerns for integrated LDMOS technologies", Proc. ISPSD, pp.159-162. |
6 | Jiann-Shiun Yuan, and Jiang L, (2008), "Evaluation of Hot-Electron Effect on LDMOS Device and Circuit Performances", IEEE Transaction on Electron Devices, Vol. 55, No.6, pp.1519-1523. DOI ScienceOn |
7 | A. S. Sedra and K. C. Smith, (2004), Microelectronic Circuits, 5th ed., Oxford University Press, New York, NY. pp.167-170. |
8 | Z. J. Shen, D. Okada, F. Lin, X. Cheng, and S. Anderson, (2005), "P-channel chip-scale lateral power MOSFET for portable electronics applications", Proc. APEC 2005, pp.343-346. |
9 | D. H. Lu, N. Fujishima, A. Sugi, M. Sugimoto, S. Matsunaga, M. Sawada, M. Iwaya, and K. Takagiwa, (2005), "Integrated Bidirectional trench lateral power MOSFETs for one chip Lithiumion battery protection ICs", Proc. ISPSD, pp.355-358. |