Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Photocurrent Characteristics of Gate/Body-Tied MOSFET-Type Photodetector with High Sensitivity

  • Jang, Juneyoung (School of Electronic and Electrical Engineering, Kyungpook National Unversity) ;
  • Choi, Pyung (School of Electronic and Electrical Engineering, Kyungpook National Unversity) ;
  • Lyu, Hong-Kun (Division of Electronics and Information System, ICT Research Institute, DGIST) ;
  • Shin, Jang-Kyoo (School of Electronic and Electrical Engineering, Kyungpook National Unversity)
  • Received : 2022.01.12
  • Accepted : 2022.01.26
  • Published : 2022.01.31
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Abstract

In this paper, the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector with high sensitivity in the 408 nm - 941 nm range are presented. High sensitivity is important for photodetectors, which are used in several scientific and industrial applications. Owing to its inherent amplifying characteristics, the GBT MOSFET-type photodetector exhibits high sensitivity. The presented GBT MOSFET-type photodetector was designed and fabricated via a standard 0.18 ㎛ complementary metal-oxide-semiconductor (CMOS) process, and its characteristics were analyzed. The photodetector was analyzed with respect to its width to length (W/L) ratio, bias voltage, and incident-light wavelength. It was confirmed experimentally that the presented GBT MOSFET-type photodetector has over 100 times higher sensitivity than a PN-junction photodiode with the same area in the 408 nm - 941 nm range.

Keywords

Acknowledgement

This research was supported by Samsung Electronics Company, Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A3B0704995213), and the Integrated Circuit Design Education Center (IDEC) in Korea, and we are grateful for this. We also thank the photometry and radiometry group of Korea Research Institute of Standards and Science (KRISS) for supporting the photocurrent measurement.

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