Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characteristic of Power MOSFET with Zener Diode for Battery Protection IC

  • Kim, Ju-Yeon (Quality Team, ITM Semiconductor Co., Ltd.) ;
  • Park, Seung-Uk (Quality Team, ITM Semiconductor Co., Ltd.) ;
  • Kim, Nam-Soo (School of Electrical and Computer Engineering, Chungbuk National University) ;
  • Park, Jung-Woong (School of Electrical and Computer Engineering, Chungbuk National University) ;
  • Lee, Kie-Yong (School of Electrical and Computer Engineering, Chungbuk National University) ;
  • Lee, Hyung-Gyoo (School of Electrical and Computer Engineering, Chungbuk National University)
  • Received : 2012.10.15
  • Accepted : 2013.01.22
  • Published : 2013.02.25
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Abstract

A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.

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References

  1. K. Sakamoto, N. Fuchigami, K. Takagawa, and S. Ohtaka, (1999), "A three-terminal intelligent power MOSFET with built-in reverse battery protection for automotive applications", IEEE Transaction on Electron Devices, Vol. 46, No. 11, pp.2228-2234. https://doi.org/10.1109/16.796300
  2. Namsoo Kim, Hyunggyoo Lee, Cuizhiyuan, (2005), "Effect of channel doping levels in LDMOSFET on the transfer characteristic of CMOS inverter", Proc. ISDRS 2005, pp. 356-357.
  3. J. Barak, A. Haran, D. David, and S. Rapaport, (2008), "A doublepower- MOSFET circuit for protection from single event burnout", IEEE Transactions on nuclear science, Vol. 55, No. 6, pp. 3467-3472. https://doi.org/10.1109/TNS.2008.2007486
  4. T. Kubota, Kiminori Watanabe, Kumiko karouji, Mitsur Ueno, Usuke Kawaguchi, and Akio Nakagawa, (2003), "Cost-effective approach in LDMOS with partial 0.35 $\mu m$ design into conventional 0.6 $\mu m$ process", Proc. ISPSD, pp. 245-248.
  5. B. Smith, J. Xu, A. Chellamuthu, B. Amey, S. Pendharkar, and T. Efland, (2004), "Peripheral motor drive PIC concerns for integrated LDMOS technologies", Proc. ISPSD, pp.159-162.
  6. Jiann-Shiun Yuan, and Jiang L, (2008), "Evaluation of Hot-Electron Effect on LDMOS Device and Circuit Performances", IEEE Transaction on Electron Devices, Vol. 55, No.6, pp.1519-1523. https://doi.org/10.1109/TED.2008.922850
  7. A. S. Sedra and K. C. Smith, (2004), Microelectronic Circuits, 5th ed., Oxford University Press, New York, NY. pp.167-170.
  8. Z. J. Shen, D. Okada, F. Lin, X. Cheng, and S. Anderson, (2005), "P-channel chip-scale lateral power MOSFET for portable electronics applications", Proc. APEC 2005, pp.343-346.
  9. D. H. Lu, N. Fujishima, A. Sugi, M. Sugimoto, S. Matsunaga, M. Sawada, M. Iwaya, and K. Takagiwa, (2005), "Integrated Bidirectional trench lateral power MOSFETs for one chip Lithiumion battery protection ICs", Proc. ISPSD, pp.355-358.

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