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http://dx.doi.org/10.4313/JKEM.2013.26.3.190

Design of 80 V Grade Low-power Semiconductor Device  

Sim, Gwan Pil (Department of Materials Engineering, Far East University)
Ann, Byoung Sup (Department of Materials Engineering, Far East University)
Kang, Ye Hwan (Department of Materials Engineering, Far East University)
Hong, Young Sung (Department of Materials Engineering, Far East University)
Kang, Ey Goo (Department of Materials Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.3, 2013 , pp. 190-193 More about this Journal
Abstract
Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.
Keywords
Power MOSFET; Planer gate MOSFET; Trench gate MOSFET; On-resistance;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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2 B. J. Baliga, Fundamentals of Power Semiconductor Devices, 279
3 B. J. Baliga, Fundamentals of Power Semiconductor Devices, 737