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http://dx.doi.org/10.4313/JKEM.2011.24.9.713

Optimal Design of GaN Power MOSFET Using Al2O3 Gate Oxide  

Nam, Tae-Jin (Department of Photovoltaic Engineering, Far East University)
Chung, Hun-Suk (Department of Photovoltaic Engineering, Far East University)
Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.9, 2011 , pp. 713-717 More about this Journal
Abstract
This paper was carried out design of 600 V GaN power MOSFET Modeling. We decided trench gate type one for design. we carried out device and process simulation with T-CAD tools. and then, we have extracted optimal device and process parameters for fabrication. we have analysis electrical characteristics after simulations. As results, we obtained 600 V breankdown voltage and $0.4\;m{\Omega}cm^2ultra$ low on resistance. At the same time, we carried out field ring simulation for obtaining high voltage.
Keywords
Compound power devices; Breakdown voltage; Low on resistance; Power MOSFET;
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1 I. Akasaki and H. Amano, Jpn. J. Appl. Phys., 36 5393 (1997).   DOI
2 Y. F. Wu, D. Kapolnek, J. P. Ibbetson, P. Parikh, B. P. Keller, and U. K. Mishra, IEEE Trans. Elect. Dev., 48, 586 (2001).   DOI
3 Y. Ando, Y. Okamoto, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, and M. Kuzuhara, IEDM Tech. Dig., 563 (2003).
4 K. Joshin, T. Kikkawa, H. Hayashi, T. Maniwa, S. Yokokawa, M. Yokoyama, N. Adachi, and M. Takikawa, IEDM Tech. Dig., 983 (2003).
5 Y. Ohmaki, M. Tanimoto, S. Akamatsu, and T. Mukai, Jpn. J. Appl. Phys., 45, 1168 (2006).   DOI
6 Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka, and D. Ueda, IEDM Tech. Dig., 907 (2006).
7 W. Huang, T. Khan, and T. P. Chow, Proc. Int. Symp. Power Semiconductor Devices and ICs, 309 (2006).
8 Y. Niiyama, H. Kambayashi, S. Ootomo, T. Nomura, and S. Yoshida, Solid State Electron., 51, 784 (2007).   DOI
9 H. Otake, S. Egami, H. Ohta, Y. Nanishi, and H. Takasu, Jpn. J. Appl. Phys., 46, 599 (2007).   DOI