Browse > Article
http://dx.doi.org/10.46670/JSST.2022.31.4.271

Interface Trap Effects on the Output Characteristics of GaN Schottky Barrier MOSFET  

Park, Byeong-Jun (School of Electronic and Electrical Engineering, Kyungpook National Unversity)
Kim, Han-Sol (School of Electronic and Electrical Engineering, Kyungpook National Unversity)
Hahm, Sung-Ho (School of Electronic and Electrical Engineering, Kyungpook National Unversity)
Publication Information
Journal of Sensor Science and Technology / v.31, no.4, 2022 , pp. 271-277 More about this Journal
Abstract
We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the Nit distribution using TCAD simulation. As interface trap number density (Nit) increased, the threshold voltage increased while the drain current density decreased. Under Nit=5.0×1010 cm-2 condition, the threshold voltage was 3.2 V for VDS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the Nit distribution type, there was an increase in the subthreshold swing (SS) following an increase in Nit. Under U-shaped Nit distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Qf) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.
Keywords
Gallium Nitride; interface trap density; GaN Schottky barrier(SB) MOSFET;
Citations & Related Records
연도 인용수 순위
  • Reference
1 D. H. Son, T. Thingujam, Q. Dai, J. G. Kim, S. Cristoloveanu, and J. H. Lee, "Fabrication and characterization of GaN-based nanostructure field effect transistors," Solid-State Electron., Vol. 184, pp. 108079(1)-108079(18), 2021.
2 F. Yu, D. R mmler, J. Hartmann, L. Caccamo, T. Schimpke, M. Strassburg, A. C. Gad, A. Bakin, H. H. Wehmann, B. Witzigmann, H. S. Wasisto, and A. Waag, "Vertical architecture for enhancement mode power transistors based on GaN nanowires," Appl. Phys. Lett., Vol. 108, No. 21, pp. 213503, 2016.   DOI
3 D. M. Fleetwood, "Long-term annealing study of midgap interface-trap charge neutrality," Appl. Phys. Lett., Vol. 60, No. 23, pp. 2883-2885, 1992.   DOI
4 J. G. Kim, C. Cho, E. Kim, J. S. Hwang, K. H. Park, and J. H. Lee, "High Breakdown Voltage and Low-Current Dispersion in AlGaN/GaN HEMTs with High-Quality AIN Bufer Layer," IEEE Trans. Electron Devices, Vol. 68, No. 4, pp. 1513-1517, 2021.   DOI
5 L. M. Terman, "An Investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes," Solid-States Electron., Vol. 5, No. 5, pp. 285-299, 1962.   DOI
6 M. Meneghini, E. Fabris, M. Ruzzarin, C. D. Santi, K. Nomoto, Z. hu, W. Li, X. Gao, D. Jena, H. G. Xing, M. Sun, T. Palacios, G. Meneghesso, and E. Zanoni, "Degradation Mechanisms of GaN-based Vertical Devices: A Review," Phys. Stats Solidi, Vol. 217, No. 7, pp. 1900750(1)-1900750(12), 2020.
7 S.B. Bae, K. W. Kim, Y. S. Lee, J. H. Lee, Y. Bae, and S. Cristoloveanu, "Capacitance-voltage characterization of surface-treated Al2O3/GaN metal-oxide-semiconductor structure," Microelectron. Eng., Vol. 109, pp.10-12, 2013.   DOI
8 T. Hossain, D. Wei, and H. Edgar, "Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors," J. Vacuum Sci.Technol. B, Vol. 33, No. 6, pp. 061201, 2015.
9 D. S. Kim, T. H. Kim, C. H. Won, H. S. Kang, K. W. Kim, K. S. Im, Y. S. Lee, S. H. Hahm, J. H. Lee, J. H. Lee, J. B. Ha, Y. Bae, and S. Cristoloveanu, "Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method," Microelectron. Eng., Vol. 88, No. 7, pp. 1221-1224, 2011.   DOI
10 J. M. Lee, K. M. Chang, S. W. Kim, C. Huh, I. H. Lee, and S. J. Park, "Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma," J. Appl. Phys., Vol. 87, No. 11, pp. 7667-7670, 2000.   DOI
11 Y. H. Chen, K. Zhang, M. Y. Cao, S. L. Zhao, J. C. Zhang, X. H. Ma and Y. Hao, "Study of surface leakage current of AlGaN/GaN high electron mobility transistors," Appl. Phys. Lett., Vol. 104, No. 15, pp. 153509, 2014.   DOI
12 P. V. Gray, and D. M. Brown, "Density of SiO2Si Interface States," Appl. Phys. Lett., Vol. 8, No. 2, pp. 31-33, 1966.   DOI
13 H. B. Lee, H. I. Cho, H. S. An, Y. H. Bae, M. B. Lee, J. H. Lee, and S. H. Hahm, "A Normally Off GaN n-MOSFET With Schottky-Barrier Source and Drain on a Si-Auto-Doped p-GaN/Si," IEEE Electron. Device Lett., Vol. 27, No. 2, pp. 81-83, 2006.   DOI
14 D. W. Jenkins, J. D. Dow, and M. Tsai, "N vacancies in AlxGa1-xN," J. Appl. Phys, Vol. 72, No. 9, pp. 4130-4133, 1992.   DOI
15 U. K. Mishra, L. Shen, T. E. Kazior, and Y. F. Wu, "GaN based RF power devices and amplifiers," Proc. of IEEE, Vol. 96, No. 2, pp. 287-305, 2008.   DOI
16 F. Roccaforte, G. Greco, P. Fiorenza, and F. Iucolano, "An Overview of Normally-Off GaN-based High Electron Mobility Transistors," Mater., Vol. 12, No. 10, pp. 1599(1)-1599(18), 2019.   DOI
17 R. Sun, J. Lai, W. Chen, and B. Zhang, "GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review," IEEE Access, Vol. 8, pp. 15529-15542, 2020.   DOI
18 S. Limpijumnong, and C. G. Van de Walle, "Diffusivity of native defects in GaN," Phys. Rev. B, Vol. 69, No. 3, pp. 035207, 2004.   DOI
19 M. Ishida, M. Ogawa, K. Orita, O. Imafuji, M. Yuri, T. Sugino, and K. Itoh, "Drastic reduction of threading dislocation in GaN regrown on grooved strip structure," J. Cryst. Growth, Vol. 221, No. 1-4, pp. 345-349, 2000.   DOI
20 A. Usui, H. Sunakawa, A.Sakai, and A. Atsushi Yamaguchi, "Thick GaN Epitaxial Growth with Low Dislocation Density," Japanese J Appl. Phys., Vol. 36, No. 7B, pp. 889-902, 1997.   DOI
21 T. Mizutani, H. Yamada, S. Kishimoto, and F. Nakamura, "Normally off AlGaN/GaN high electron mobility transistors with p-InGaN cap layer," J. Appl. Phys., Vol. 113, No. 3, pp. 034502, 2013.   DOI
22 Silvaco Atlas User Manual, Santa Clara, California, 2019.
23 J. Song, S. W. Han, H. Luo, J. Rumsey, J. H. Leach, and R. Chu, "Study of interface trap density of AlOxNy/GaN MOS structures," Appl. Phys. Lett., Vol. 119, No. 12, pp. 122105, 2021.   DOI
24 Y. Zhang, H. Y. Wong, M. Sun, S. Joglekar, L. Yu, N. A. Braga, R. V. Mickevicius, and T. Palacios, "Design Space and Origin of Off-State Leakage in GaN Vertical Power Diodes," IEEE Int. Electron Devices Meeting, pp. 889-902, 2015.