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Development of the 120kV/70A High Voltage Switching Circuit with MOSFETs Operated by Simple Gate Drive Unit  

송인호 (㈜포스콘 기술연구소)
최창호 (㈜포스콘 기술연구소)
Publication Information
The Transactions of the Korean Institute of Power Electronics / v.8, no.1, 2003 , pp. 24-29 More about this Journal
Abstract
A 120kV/70A high voltage switch has been installed at Korea Atomic Energy Research Institute(KAERI) in Taejon to supply power with Korea Superconducting Tokamak Advanced Research(KSTAR) Neutral Beam Injection(NBI) system. NBI system requires fast cutoff of the flower supply voltage for protection of the grid when arc detected and fast turn-on the voltage for sustaining the beam current. Therefore the high voltage switch and arc current detection circuit are important part of the NBI power supply. There are much need for high voltage solid state switches in NBI system and a broad area of applications. This switch consisted of 100 series connected MOSFETs and adopted the proposed simple and reliable gate drive circuit without bias supply. Various results taken during the commissioning phase with a 100kW resistive load and NBI source arc shown. This paper presents the detailed design of 120kV/70A high voltage MOSFETs switch and simple gate drive circuit. Problems with the high voltage switch and gate driver during thefabrication and test and solutions are also presented.
Keywords
NBI; MOSFET; Gate driver; Bias supply;
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