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http://dx.doi.org/10.4313/JKEM.2008.21.2.104

Design and Analysis of 16 V N-TYPE MOSFET Transistor for the Output Resistance Improvement at Low Gate Bias  

Kim, Young-Mok (고려대학교 전기공학과)
Lee, Han-Sin (고려대학교 전기공학과)
Sung, Man-Young (고려대학교 전기공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.21, no.2, 2008 , pp. 104-110 More about this Journal
Abstract
In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.
Keywords
N-TYPE MOSFET; Output resistance; Soft break-down; Impact ionization; Low gate bias;
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