DOI QR코드

DOI QR Code

SiC Based Single Chip Programmable AC to DC Power Converter

  • Received : 2013.10.18
  • Accepted : 2014.11.04
  • Published : 2014.12.30

Abstract

A single chip Programmable AC to DC Power Converter, consisting of wide band gap SiC MOSFET and SiC diodes, has been proposed which converts high frequency ac voltage to a conditioned dc output voltage at user defined given power level. The converter has high conversion efficiency because of negligible reverse recovery current in SiC diode and SiC MOSFET. High frequency operation reduces the need of bigger size inductor. Lead inductors are enough to maintain current continuity. A complete electrical analysis, die area estimation and thermal analysis of the converter has been presented. It has been found that settling time and peak overshoot voltage across the device has reduced significantly when SiC devices are used with respect to Si devices. Reduction in peak overshoot also increases the converter efficiency. The total package substrate dimension of the converter circuit is only $5mm{\times}5mm$. Thermal analysis performed in the paper shows that these devices would be very useful for use as miniaturized power converters for load currents of up to 5-7 amp, keeping the package thermal conductivity limitation in mind. The converter is ideal for voltage requirements for sub-5 V level power supplies for high temperatures and space electronics systems.

Keywords

References

  1. Wang, Ruxi, Ning Pugi, Boroyevich, Dushan; Danilovic, Milisav; Wang, Fred; Kaushik, and Raja Shekara, "Design of high-temperature SiC threephase AC-DC converter for > $100^{\circ}C$ ambient temperature" IEEE Energy Conversion Congress and Exposition (ECCE), 2010 12-16 Sept. 2010
  2. Hazucha, P. and Schrom, G. and Jaehong Hahn and Bloechel, B.A. and Hack, P. and Dermer, G.E. and Narendra, S. and Gardner, D. and Karnik, T. and De, V. and Borkar, S., .A 233-MHz 80utilizing aircore inductors on package,. Solid-State Circuits, IEEE Journal of, vol. 40, no. 4, pp. 838.845, April 2005. https://doi.org/10.1109/JSSC.2004.842837
  3. 500-mA, 3MHz Synchronous Step-Down Converters in chip scale package, TPS623XX Datasheet, Texas Instruments, available at http://www.focus.ti.com/lit/ds/symlink/tps62315.pdf
  4. 4 MHz PWM Synchronous Buck Regulator with LDO Standby Mode, MIC2245 Datasheet, Micrel Inc., available at http://www.micrel.com/PDF/mic2245.pdf
  5. 6A Voltage Mode Synchronous Buck PWM DCDC Converter with Integrated Inductor 3-Pin VID Output Voltage Select , EP5365Q Datasheet, Enpirion, Inc., available at http://www.enpirion.com
  6. Shigenori Inoue, Hirofumi Akagi, "A Bidirectional Isolated DC- DC Converter as a Core Circuit of the Next-Generation" IEEE Transactions on Power Electronics, Volume: 22, Issue: 2, Pages: 535-542, March 2007 https://doi.org/10.1109/TPEL.2006.889939
  7. Y.S. Ravi Kumar, and K.S. Guru Murthy, "Silicon Carbide Material with Power Electronic Control Devices", IJCSNS International Journal of Computer Science and Network Security, VOL.11, No.12, December 2011
  8. Anant Agarwal, Mrinal Das, Brett Hull, Sumi Krishnaswami, John Palmour, James Richmond, Sei-Hyung Ryu, Jon Zhang, "Progress in Silicon Carbide Power Devices" IEEE Device Research Conference, 2006 64th. pp. 155-158.
  9. James D. Scofield, J. Neil Merrett, James Richmond, Anant Agarwal and Scott Leslie , "Air Force Research Laboratory Performance and Reliability Characteristics of 1200 V, 100 A, 200oC Half-Bridge SiC MOSFET-JBS Diode Power Module", International Conference on High Temperature Electronics International Microelectronics & Packaging Society May 2010 Albuquerque, NM
  10. Singh, Ranbir, Capell, D, Richmond, James T. Palmour, JohnW W., "7.4 kV, 330 A (pulsed), single chip, high temperature 4H-SiC pin rectifier" Electronics Letters, 5 Dec 2002, Volume: 38, Issue: 25, Page(s): 1738-1740 https://doi.org/10.1049/el:20021108
  11. Shigenori Inoue, Hirofumi Akagi, "A Bidirectional Isolated DC- DC Converter as a Core Circuit of the Next-Generation" IEEE Transactions on Power Electronics (2007), Volume: 22, Issue: 2, Pages: 535-542 https://doi.org/10.1109/TPEL.2006.889939
  12. Manikam, Vemal Raja, "Die Attach Materials for High Temperature Applications: A Review", IEEE Transactions on Components, Packaging and Manufacturing Technology, April 2011, Volume: 1 issue 4 Page(s): 457- 478 https://doi.org/10.1109/TCPMT.2010.2100432
  13. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni, "SiC Power Device Packaging Technologies for 300 to 3500C Applications" Materials Science Forum, SiC and Related Materials 2004, (Volume 483-485), pp. 785-790
  14. CPW2-0600S006 SiC Schottky Diode bare die Datasheet http://www.cree.com/products/pdf/CPW2-0600S006.pdf
  15. A. R. Hefner, R. Singh, J. S. Lai, D. W. Berning, S. Bouche, and C. Chapuy, "SiC power diodes provide breakthrough performance for a wide range of applications," IEEE Trans. Power Electron., vol. 16, no. 2, pp. 273-280, Mar. 2001 https://doi.org/10.1109/63.911152
  16. CPMF1200-S080B SiC Power MOSFET bare die Datasheet http://www.cree.com/products/pdf/CPMF1200-S080B.pdf
  17. Anzawa, T. Yokohama Nat. Univ., Yokohama Qiang Yu; Shibutani, T.; Shiratori, M., "Reliability Evaluation for Power Electronics Device using Electrical Thermal and Mechanical Analysis", 9th Electronics Packaging Technology Conference, 2007. EPTC 2007. pp. 94-95
  18. Matsukawa, Tatsuya, Shimada, Ryuichi, "Efficiency improvement of AC/DC converter using SiC-based power electronics device" 20th IEEE/NPSS Symposium on Fusion Engineering, 2003, 14-17 Oct. 2003, Page(s): 379-382