• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.487-488
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• 2006

In this paper, we analyzed the FBGA packages operating in high speeds and high frequency rates for DRAM. Using 3D simulations, we could extract s-parameters of packages. We realize that the proposed FBGA package does not operate properly at 3Gbps bacause the FBGA package have delta-I noise($V_{{\Delta}I-peak}$) of 132.0mV and crosstalk of 300mV, which is 25% of the operating clock level.

• 대한전자공학회논문지SD
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• 제41권10호
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• pp.31-39
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• 2004

이 논문은 파워 잡음 특성이 칩(chip)의 코아 동작에 따라 DDR DRAM용 모듈(Module)과 패키지(package)의 종류의 영향을 받는 다는 것을 보여주고 있다. 이를 분석하기 위해 상용 TSOP-based DIMM 과 FBGA-based DIMM에서 FBGA와 TSOP 패키지형 DRAM 칩을 가지고 임피던스 모양과 파워 잡음을 분석하였다. 일반적인 상식과 달리, FBGA 패키지의 잡음 격리 특성이 TSOP 패키지의 잡음 격리 특성보다 전달되는 잡음에 더 약하고 민감하다는 것이 발견되었다. 또한 자체 및 전달 잡음 특성을 조절하는데 있어서는 모듈상의 디커풀링 커패시터(decoupling capacitors)들 위치가 패키지 자체의 리드선 인덕턴스(lead inductance)보다 더 중요하다는 것을 또한 시뮬레이션 결과들은 보여준다. 따라서 잡음 억제나 잡음 전달로부터 격리의 목표설정 값을 만족시키는 것은 패키지 형태 뿐 아니라 모듈 전체를 고려한 파워 분배 시스템의 설계를 통해서만 얻어질수 있다.

• 마이크로전자및패키징학회지
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• 제19권2호
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• pp.7-15
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• 2012

최근 모바일 기기에 적용되는 반도체 패키지는 초소형, 초박형 및 다기능을 요구하고 있기 때문에 다양한 실리콘 칩들이 다층으로 수직 적층된 패키지의 개발이 필요하다. 패키지 및 실리콘 칩의 두께가 계속 얇아지면서 휨 현상, 크랙 및 여러 다른 형태의 파괴가 발생될 가능성이 많다. 이러한 문제는 패키지 재료들의 열팽창계수의 차 및 패키지의 구조적인 설계로 인하여 발생된다. 본 연구에서는 4층으로 적층된 FBGA 패키지의 휨 현상 및 응력을 수치해석을 통하여 상온과 리플로우 온도 조건에서 각각 분석하였다. 상온에서 가장 적은 휨을 보여준 경우가 리플로우 공정 조건에서는 오히려 가장 큰 휨을 보여 주고 있다. 본 연구의 물성 조건에서 패키지의 휨에 가장 큰 영향을 미치는 인자는 EMC의 열팽창계수, EMC의 탄성계수, 다이의 두께, PCB의 열팽창계수 순이었다. 휨을 최소화하기 위하여 패키지 재료들의 물성들을 RMS 기법으로 최적화한 결과 패키지의 휨을 약 $28{\mu}m$ 감소시킬 수 있었다. 다이의 두께가 얇아지게 되면 다이의 최대 응력은 증가한다. 특히 최상부에 위치한 다이의 끝 부분에서 응력이 급격히 증가하기 시작한다. 이러한 응력의 급격한 변화 및 응력 집중은 실리콘 다이의 파괴를 유발시킬 가능성이 많다. 따라서 다이의 두께가 얇아질수록 적절한 재료의 선택 및 구조 설계가 중요함을 알 수 있다.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2010년도 춘계학술대회 논문집
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• pp.572-573
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• 2010

Vibration analysis of Fine-pitch Ball Grid Array (FBGA) packages mounted on a Printed Circuit Board (PCB) subjected to harmonic excitation is performed by using finite element method (FEM). A finite element model of a memory module is composed of three main parts, packages, simplified solder balls and bare PCB. At first, natural frequencies and mode shapes of the developed model were confirmed experimentally. Secondly, the harmonic excitation experiment for the module was carried out at the first natural frequency of the memory module, and it was verified with the simulation by using mode superposition method at a constant acceleration.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.755-756
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• 2011

• 마이크로전자및패키징학회지
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• 제17권4호
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• pp.73-76
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• 2010

A two-facet approach was used to investigate the parametric performance of functional high-speed DDR3 (Double Data Rate) DRAM (Dynamic Random Access Memory) die placed in different types of BGA (Ball Grid Array) packages: wire-bonded BGA (FBGA, Fine Ball Grid Array), flip-chip (FCBGA) and lead-bonded $microBGA^{(R)}$. In the first section, packaged live DDR3 die were tested using automatic test equipment using high-resolution shmoo plots. It was found that the best timing and voltage margin was obtained using the lead-bonded microBGA, followed by the wire-bonded FBGA with the FCBGA exhibiting the worst performance of the three types tested. In particular the flip-chip packaged devices exhibited reduced operating voltage margin. In the second part of this work a test system was designed and constructed to mimic the electrical environment of the data bus in a PC's CPU-Memory subsystem that used a single DIMM (Dual In Line Memory Module) socket in point-to-point and point-to-two-point configurations. The emulation system was used to examine signal integrity for system-level operation at speeds in excess of 6 Gb/pin/sec in order to assess the frequency extensibility of the signal-carrying path of the microBGA considered for future high-speed DRAM packaging. The analyzed signal path was driven from either end of the data bus by a GaAs laser driver capable of operation beyond 10 GHz. Eye diagrams were measured using a high speed sampling oscilloscope with a pulse generator providing a pseudo-random bit sequence stimulus for the laser drivers. The memory controller was emulated using a circuit implemented on a BGA interposer employing the laser driver while the active DRAM was modeled using the same type of laser driver mounted to the DIMM module. A custom silicon loading die was designed and fabricated and placed into the microBGA packages that were attached to an instrumented DIMM module. It was found that 6.6 Gb/sec/pin operation appears feasible in both point to point and point to two point configurations when the input capacitance is limited to 2pF.

• Journal of electromagnetic engineering and science
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• 제11권1호
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• pp.62-69
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• 2011

This paper proposes a novel electrical characterization approach for a high-performance package system using an improved Partial Element Equivalent Circuit (PEEC). As the effect of interconnects becomes a pivotal factor for the performance of high-speed electronic systems, there is a great demand for an accurate equivalent model for interconnects. In particular, an equivalent model of interconnects is established in this paper for the Fine-Pitch Ball Grid Array (FBGA) package using the improved PEEC method. Based on the equivalent model, electrical characteristics are analyzed; furthermore, these are verified through the measurement results of a Vector Network Analyzer (VNA).

• 마이크로전자및패키징학회지
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• 제18권2호
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• pp.35-41
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• 2011

Recently, board level solder joint reliability performance of IC packages during drop impact becomes a great concern to semiconductor and electronic product manufacturers. The handheld electronic products are prone to being dropped during their useful service life because of their size and weight. The IC packages are susceptible to solder joint failures, induced by a combination of printed circuit board (PCB) bending and mechanical shock during impact. The board level drop testing is an effective method to characterize the solder joint reliability performance of miniature handheld products. In this paper, applying the JEDEC (JESD22-B111) standard present a finite element modeling of the FBGA. The simulation results revealed that maximum stress was located at the outermost solder ball in the PCB or IC package side, which consisted well with the location of crack initiation observed in the failure analysis after drop reliability tests.