• Title/Summary/Keyword: Down Literal Circuit

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MVL Data Converters Using Neuron MOS Down Literal Circuit (뉴런모스 다운리터럴 회로를 이용한 다치논리용 데이터 변환기)

  • Han, Sung-Il;Na, Gi-Soo;Choi, Young-Hee;Kim, Heung-Soo
    • Journal of IKEEE
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    • v.7 no.2 s.13
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    • pp.135-143
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    • 2003
  • This paper describes the design techniques of the data converters for Multiple-Valued Logic(MVL). A 3.3V low power 4 digit CMOS analog to quaternary converter (AQC) and quaternary to analog converter (QAC) mainly designed with the neuron MOS down literal circuit block has been introduced. The neuron MOS down literal architecture allows the designed AQC and QAC to accept analog and 4 level voltage inputs, and enables the proposed circuits to have the multi-threshold properity. Low power consumption of the AQC and QAC are achieved by utilizing the proposed architecture.

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A Study on the Parallel Multiplier over $GF(3^m)$ Using AOTP (AOTP를 적용한 $GF(3^m)$ 상의 병렬승산기 설계에 관한 연구)

  • Han, Sung-Il;Hwang, Jong-Hak
    • Journal of IKEEE
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    • v.8 no.2 s.15
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    • pp.172-180
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    • 2004
  • In this paper, a parallel Input/Output modulo multiplier, which is applied to AOTP(All One or Two Polynomials) multiplicative algorithm over $GF(3^m)$, has been proposed using neuron-MOS Down-literal circuit on voltage mode. The three-valued input of the proposed multiplier is modulated by using neuron-MOS Down-literal circuit and the multiplication and Addition gates are implemented by the selecting of the three-valued input signals transformed by the module. The proposed circuits are simulated with the electrical parameter of a standard $0.35{\mu}m$CMOS N-well doubly-poly four-metal technology and a single +3V supply voltage. In the simulation result, the multiplier shows 4 uW power consumption and 3 MHzsampling rate and maintains output voltage level in ${\pm}0.1V$.

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(A Study on the Design of Analog Converter Using Neuron MOS) (뉴런모스를 이용한 아날로그 변환기 설계에 관한 연구)

  • Han, Seong-Il;Park, Seung-Yong;Kim, Heung-Su
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.39 no.3
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    • pp.201-210
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    • 2002
  • This paper describes a 3.3 (V) low power 4 digit CMOS quaternary to analog converter (QAC) designed with a neuron MOS($\upsilon$MOS) down literal circuit block and cascode current mirror source block. The neuron MOS down literal architecture allows the designed QAC to accept not only 4 level voltage inputs, but also a high speed sampling rate quaternary voltage source LSB. Fast settling time and low power consumption of the QAC are achieved by utilizing the proposed architecture. The simulation results of the designed 4 digit QAC show a sampling rate of 6(MHz) and a power dissipation of 24.5 (mW) with a single power supply of 3.3 (V) for a CMOS 0.35${\mu}{\textrm}{m}$ n-well technology.

Design of a Capacitive Detection Circuit using MUX and DLC based on a vMOS (vMOS 기반의 DLC와 MUX를 이용한 용량성 감지회로)

  • Jung, Seung-Min
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.11 no.4
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    • pp.63-69
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    • 2012
  • This paper describes novel scheme of a gray scale capacitive fingerprint image for high-accuracy capacitive sensor chip. The typical gray scale image scheme used a DAC of big size layout or charge-pump circuit of non-volatile memory with high power consumption and complexity by a global clock signal. A modified capacitive detection circuit of charge sharing scheme is proposed, which uses DLC(down literal circuit) based on a neuron MOS(vMOS) and analog simple multiplexor. The detection circuit is designed and simulated in 3.3V, $0.35{\mu}m$ standard CMOS process. Because the proposed circuit does not need a comparator and peripheral circuits, a pixel layout size can be reduced and the image resolution can be improved.

A Study on the Design of Binary to Quaternary Converter (2진-4치 변환기 설계에 관한 연구)

  • 한성일;이호경;이종학;김흥수
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.40 no.3
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    • pp.152-162
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    • 2003
  • In this paper, Binary to Quaternary Converter(BQC), Quaternary to Binary Converter(QBC) and Quaternary inverter circuit, which is the basic logic gate, have been proposed based on voltage mode. The BQC converts the two bit input binary signals to one digit quaternary output signal. The QBC converts the one digit quaternary input signal to two bit binary output signals. And two circuits consist of Down-literal circuit(DLC) and combinational logic block(CLC). In the implementation of quaternary inverter circuit, DLC is used for reference voltage generation and control signal, only switch part is implemented with conventional MOS transistors. The proposed circuits are simulated in 0.35 ${\mu}{\textrm}{m}$ N-well doubly-poly four-metal CMOS technology with a single +3V supply voltage. Simulation results of these circuit show 250MHz sampling rate, 0.6mW power consumption and maintain output voltage level in 0.1V.

A Study of a High Performance Capacitive Sensing Scheme Using a Floating-Gate MOS Transistor

  • Jung, Seung-Min
    • Journal of information and communication convergence engineering
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    • v.10 no.2
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    • pp.194-199
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    • 2012
  • This paper proposes a novel scheme of a gray scale fingerprint image for a high-accuracy capacitive sensor chip. The conventional grayscale image scheme uses a digital-to-analog converter (DAC) of a large-scale layout or charge-pump circuit with high power consumption and complexity by a global clock signal. A modified capacitive detection circuit for the charge sharing scheme is proposed, which uses a down literal circuit (DLC) with a floating-gate metal-oxide semiconductor transistor (FGMOS) based on a neuron model. The detection circuit is designed and simulated in a 3.3 V, 0.35 ${\mu}m$ standard CMOS process. Because the proposed circuit does not need a comparator and peripheral circuits, the pixel layout size can be reduced and the image resolution can be improved.

Design of Synchronous Quaternary Counter using Quaternary Logic Gate Based on Neuron-MOS (뉴런 모스 기반의 4치 논리게이트를 이용한 동기식 4치 카운터 설계)

  • Choi Young-Hee;Yoon Byoung-Hee;Kim Heung-Soo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.3 s.333
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    • pp.43-50
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    • 2005
  • In this paper, quaternary logic gates using Down literal circuit(DLC) has been designed, and then synchronous Quaternary un/down counter using those gates has been proposed The proposed counter consists of T-type quaternary flip flop and 1-of-2 threshold-t MUX, and T-type quaternary flip flop consists of D-type quaternary flip flop and quaternary logic gates(modulo-4 addition gates, Quaternary inverter, identity cell, 1-of-4 MUX). The simulation result of this counter show delay time of 10[ns] and power consumption of 8.48[mW]. Also, assigning the designed counter to MVL(Multiple-valued Logic) circuit, it has advantages of the reduced interconnection and chip area as well as easy expansion of digit.

The Design of the Ternary Sequential Logic Circuit Using Ternary Logic Gates (3치 논리 게이트를 이용한 3치 순차 논리 회로 설계)

  • 윤병희;최영희;이철우;김흥수
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.10
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    • pp.52-62
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    • 2003
  • This paper discusses ternary logic gate, ternary D flip-flop, and ternary four-digit parallel input/output register. The ternary logic gates consist of n-channel pass transistors and neuron MOS(νMOS) threshold inverters on voltage mode. They are designed with a transmission function using threshold inverter that are in turn, designed using Down Literal Circuit(DLC) that has various threshold voltages. The νMOS pass transistor is very suitable gate to the multiple-valued logic(MVL) and has the input signal of the multi-level νMOS threshold inverter. The ternary D flip-flop uses the storage element of the ternary data. The ternary four-digit parallel input/output register consists of four ternary D flip-flops which can temporarily store four-digit ternary data. In this paper, these circuits use 3.3V low power supply voltage and 0.35m process parameter, and also represent HSPICE simulation result.

Design of Quaternary Logic gate Using Double Pass-transistor Logic with neuron MOS Threshold gate (뉴런 MOS 임계 게이트를 갖는 2중 패스-트랜지스터 논리를 이용한 4치 논리 게이트 설계)

  • Park, Soo-Jin;Yoon, Byoung-Hee;Kim, Heung-Soo
    • Journal of IKEEE
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    • v.8 no.1 s.14
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    • pp.33-38
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    • 2004
  • A multi-valued logic(MVL) pass gate is an important element to configure multi-valued logic. In this paper, we designed the Quaternary MIN(QMIN)/negated MIN(QNMIN) gate, the Quaternary MAX(QMAX)/negated MAX(QNMAX) gate using double pass-transistor logic(DPL) with neuron $MOS({\nu}MOS)$ threshold gate. DPL is improved the gate speed without increasing the input capacitance. It has a symmetrical arrangement and double-transmission characteristics. The threshold gates composed by ${\nu}MOS$ down literal circuit(DLC). The proposed gates get the valued to realize various multi threshold voltages. In this paper, these circuits are used 3V power supply voltage and parameter of 0.35um N-Well 2-poly 4-metal CMOS technology, and also represented HSPICE simulation results.

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