Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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The Design of the Ternary Sequential Logic Circuit Using Ternary Logic Gates

3치 논리 게이트를 이용한 3치 순차 논리 회로 설계

  • Published : 2003.10.01
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Abstract

This paper discusses ternary logic gate, ternary D flip-flop, and ternary four-digit parallel input/output register. The ternary logic gates consist of n-channel pass transistors and neuron MOS(νMOS) threshold inverters on voltage mode. They are designed with a transmission function using threshold inverter that are in turn, designed using Down Literal Circuit(DLC) that has various threshold voltages. The νMOS pass transistor is very suitable gate to the multiple-valued logic(MVL) and has the input signal of the multi-level νMOS threshold inverter. The ternary D flip-flop uses the storage element of the ternary data. The ternary four-digit parallel input/output register consists of four ternary D flip-flops which can temporarily store four-digit ternary data. In this paper, these circuits use 3.3V low power supply voltage and 0.35m process parameter, and also represent HSPICE simulation result.

본 논문에서는 3치 논리 게이트, 3치 D 플립플롭과 3치 4-디지트 병렬 입력/출력 레지스터를 제안하였다. 3치 논리 게이트는 n 채널 패스 트랜지스터와 뉴런 MOS(νMOS) 임계 인버터로 구성된다. 3치 논리 게이트들은 다양한 임계 전압을 갖는 다운 리터럴 회로를 사용하였고 전송함수를 바탕으로 설계되었다. 뉴런 MOS 트랜지스터는 다치 논리 구현에 가장 적합한 게이트이고 다양한 레벨의 입력 신호를 갖는다. 3치 D 플립 플롭과 3치 레지스터는 3치 데이터를 임시로 저장할 수 있는 저장 장치로 사용할 수 있다. 본 논문에서는 3.3V의 전원 전압을 사용하였고 0.35um 공정 파라미터를 이용하여 모의 실험을 통해 그 결과를 HSPICE로 검증하였다.

Keywords

References

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