• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.27-32
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• 2016

A conventional double diffused drain n-type MOSFET (DDD_NMOS) device shows SCR behaviors with very low snapback holding voltage and latch-up problem during normal operation. However, a modified DDD_NMOS-based silicon controlled rectifier (DDD_NSCR_CPS) device with a counter pocket source (CPS) structure is proven to increase the snapback holding voltage and on-resistance compare to standard DDD_NSCR device, realizing an excellent electrostatic discharge protection performance and the stable latch-up immunity.

• Journal of Satellite, Information and Communications
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• v.8 no.1
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• pp.45-53
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• 2013

An electrostatic discharge (ESD) protection device, so called, N-type extended drain silicon controlled rectifier (NEDSCR) device, was analyzed for high voltage I/O applications. A conventional NEDSCR device shows typical SCR-like characteristics with extremely low snapback holding voltage. This may cause latch-up problem during normal operation. However, a modified NEDSCR device with proper junction/channel engineering using counter pocket source (CPS) ion implantation demonstrates itself with both the excellent ESD protection performance and the high latch-up immunity. Since the CPS implant technique does not change avalanche breakdown voltage, this methodology does not reduce available operation voltage and is applicable regardless of the operation voltage.

• Journal of Satellite, Information and Communications
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• v.10 no.4
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• pp.1-5
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• 2015

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different partial p-well(PPW) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device shows typical SCR-like characteristics with low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW_PGM(primary gate middle) and optimal CPS(counter pocket source) implant demonstrate the stable ESD protection performance with high latch-up immunity.

• Journal of IKEEE
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• v.26 no.2
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• pp.196-204
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• 2022

Electrostatic discharge (ESD) protection devices of P-type embedded silicon-controlled rectifier (PESCR) structure were analyzed for high-voltage operating input/output (I/O) applications. Conventional PESCR standard device exhibits typical SCR characteristics with very low-snapback holding voltages, resulting in latch-up problems during normal operation. However, the modified device with the counter pocket source (CPS) surrounding N⁺ source region and partially formed P-well (PPW) structures proposed in this study could improve latch-up immunity by indicating high on-resistance and snapback holding voltage.

• Journal of Satellite, Information and Communications
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• v.9 no.3
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• pp.15-21
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• 2014

An electrostatic discharge (ESD) protection device, so called, N-type embedded silicon controlled rectifier (NESCR), was analyzed for high voltage operating I/O applications. A conventional NESCR standard device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latch-up problem during normal operation. However, our modified NESCR_CPS_PPW device with proper junction/channel engineering such as counter pocket source (CPS) and partial P-well structure demonstrates highly latch-up immune current-voltage characteristics with high snapback holding voltage and on-resistance.

• Journal of Satellite, Information and Communications
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• v.8 no.4
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• pp.124-129
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• 2013

An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latch-up problem during normal operation. However, a modified NSCR_PPS device with counter pocket source(CPS) and partial p-type well(PPW) structure demonstrates highly latch-up immune current-voltage characteristics.

• Journal of Satellite, Information and Communications
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• v.10 no.4
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• pp.6-11
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• 2015

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different GPNS(Gate to Primary $N^+$ Diffusion Space) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device with FPW(Full P-Well) structure and non-CPS(Counter Pocket Source) implant shows typical SCR-like characteristics with low on-resistance(Ron), low snapback holding voltage(Vh) and low thermal breakdown voltage(Vtb), which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW(Partial P-Well) structure and optimal CPS implant demonstrate the improved ESD protection performance as a function of GPNS variation. GPNS was a important parameter, which is satisfied design window of ESD protection device.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.21-26
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• 2016

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different implant of channel blocking region was discussed for high voltage I/O applications. A conventional NSCR standard device shows low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified channel blocking structure demonstrate the improved ESD protection performance as a function of channel implant variation. Therefore, the channel blocking implant was a important parameter. Since the modified device with CPS_PDr+HNF structure satisfied the design window, we confirmed the applicable possibility as a ESD protection device for high voltage operating microchips.

• Journal of Satellite, Information and Communications
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• v.9 no.4
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• pp.63-68
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• 2014

Electrostatic Discharge(ESD) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different partial p-well(PPW) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device shows typical SCR-like characteristics with low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW demonstrate the stable ESD protection performance with high latch-up immunity.