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Optimal P-Well Design for ESD Protection Performance Improvement of NESCR (N-type Embedded SCR) device  

Yang, Jun-Won (세한대학교 컴퓨터교육과)
Seo, Yong-Jin (세한대학교 나노정보소재연구소)
Publication Information
Journal of Satellite, Information and Communications / v.9, no.3, 2014 , pp. 15-21 More about this Journal
Abstract
An electrostatic discharge (ESD) protection device, so called, N-type embedded silicon controlled rectifier (NESCR), was analyzed for high voltage operating I/O applications. A conventional NESCR standard device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latch-up problem during normal operation. However, our modified NESCR_CPS_PPW device with proper junction/channel engineering such as counter pocket source (CPS) and partial P-well structure demonstrates highly latch-up immune current-voltage characteristics with high snapback holding voltage and on-resistance.
Keywords
ESD (Electrostatic discharge); NESCR (N-type Embedded SCR); SCR (Silicon Controlled Rectifier); CPS (Counter Pocket Source); Snapback Holding Voltage; Latch-up; PPW (Partial P-Well);
Citations & Related Records
Times Cited By KSCI : 5  (Citation Analysis)
연도 인용수 순위
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