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Improvement of ESD (Electrostatic Discharge) Protection Performance of NEDSCR (N-Type Extended Drain Silicon Controlled Rectifier) Device using CPS (Counter Pocket Source) Ion Implantation  

Yang, Jun-Won (세한대학교 컴퓨터교육과)
Seo, Yong-Jin (세한대학교 나노정보소재연구소)
Publication Information
Journal of Satellite, Information and Communications / v.8, no.1, 2013 , pp. 45-53 More about this Journal
Abstract
An electrostatic discharge (ESD) protection device, so called, N-type extended drain silicon controlled rectifier (NEDSCR) device, was analyzed for high voltage I/O applications. A conventional NEDSCR device shows typical SCR-like characteristics with extremely low snapback holding voltage. This may cause latch-up problem during normal operation. However, a modified NEDSCR device with proper junction/channel engineering using counter pocket source (CPS) ion implantation demonstrates itself with both the excellent ESD protection performance and the high latch-up immunity. Since the CPS implant technique does not change avalanche breakdown voltage, this methodology does not reduce available operation voltage and is applicable regardless of the operation voltage.
Keywords
ESD (Electrostatic discharge); NEDSCR (N-type Extended Drain Silicon Controlled Rectifier); CPS (Counter Pocket Source); TLP (Transmission Line Pulse); Snapback Holding; On-Resistance; Latch-up; Triggering;
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Times Cited By KSCI : 1  (Citation Analysis)
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