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Improvement of Electrostatic Discharge (ESD) Protection Performance through Structure Modification of N-Type Silicon Controlled Rectifier Device  

Yang, Jun-Won (세한대학교 컴퓨터교육과)
Seo, Yong-Jin (세한대학교 나노정보소재연구소)
Publication Information
Journal of Satellite, Information and Communications / v.8, no.4, 2013 , pp. 124-129 More about this Journal
Abstract
An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latch-up problem during normal operation. However, a modified NSCR_PPS device with counter pocket source(CPS) and partial p-type well(PPW) structure demonstrates highly latch-up immune current-voltage characteristics.
Keywords
ESD (electrostatic discharge); SCR (silicon controlled rectifier); PPS (P-type MOSFET pass structure); CPS (counter pocket source); PPW (partial P-type well);
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
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