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Simulation-based ESD protection performance of modified DDD_NSCR device with counter pocket source structure for high voltage operating I/O application  

Seo, Yong-Jin (세한대학교 소방행정학과/나노정보소재연구소)
Yang, Jun-Won (세한대학교 항공교통물류학과)
Publication Information
Journal of Satellite, Information and Communications / v.11, no.4, 2016 , pp. 27-32 More about this Journal
Abstract
A conventional double diffused drain n-type MOSFET (DDD_NMOS) device shows SCR behaviors with very low snapback holding voltage and latch-up problem during normal operation. However, a modified DDD_NMOS-based silicon controlled rectifier (DDD_NSCR_CPS) device with a counter pocket source (CPS) structure is proven to increase the snapback holding voltage and on-resistance compare to standard DDD_NSCR device, realizing an excellent electrostatic discharge protection performance and the stable latch-up immunity.
Keywords
ESD; DDD_NMOS; DDD_NSCR_CPS; CPS; snapback holding voltage; on-resistance; latch-up immunity; simulation;
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