• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.3
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• pp.152-162
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• 2003

In this paper, Binary to Quaternary Converter(BQC), Quaternary to Binary Converter(QBC) and Quaternary inverter circuit, which is the basic logic gate, have been proposed based on voltage mode. The BQC converts the two bit input binary signals to one digit quaternary output signal. The QBC converts the one digit quaternary input signal to two bit binary output signals. And two circuits consist of Down-literal circuit(DLC) and combinational logic block(CLC). In the implementation of quaternary inverter circuit, DLC is used for reference voltage generation and control signal, only switch part is implemented with conventional MOS transistors. The proposed circuits are simulated in 0.35 ${\mu}{\textrm}{m}$ N-well doubly-poly four-metal CMOS technology with a single +3V supply voltage. Simulation results of these circuit show 250MHz sampling rate, 0.6mW power consumption and maintain output voltage level in 0.1V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.52-58
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• 2009

A low voltage, low power delta-sigma modulator is proposed for cardiac pacemaker applications. A cascade of delta-sigma modulator stages that employ a feedforward topology has been used to implement a high-resolution oversampling ADC under the low supply. An inverter-based switched-capacitor circuit technique is used for low-voltage operation and ultra-low power consumption. An experimental prototype of the proposed circuit has been implemented in a $0.35-{\mu}m$ CMOS process, and it achieves 61-dB SNDR, 63-dB SNR, and 65-dB DR for a 120-Hz signal bandwidth at 7.6-kHz sampling frequency. The power consumption is only 280 nW at 1-V power supply.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.605-610
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• 2010

The devices based on electrically erasable programmable read-only memory (EEPROM) structure are proposed for the detection of external electric charges. A large size charge contact window (CCW) extended from the floating gate is employed to immobilize external charges, and a control gate with stacked metal-insulator-metal (MIM) capacitor is adapted for a standard single polysilicon CMOS process. When positive voltage is applied to the capacitor of CCW of an n-channel EEPROM, the drain current increases due to the negative shift of its threshold voltage. Also when a pre-charged external capacitor is directly connected to the floating gate metal of CCW, the positive charges of the external capacitor make the drain current increase for n-channel, whereas the negative charges cause it to decrease. For an p-channel, however, the opposite behaviors are observed by the external voltage and charges. With the attachment of external charges to the CCW of EEPROM inverter, the characteristic inverter voltage behavior shifts from the reference curve dependent on external charge polarity. Therefore, we have demonstrated that the EEPROM inverter is capable of detecting external immobilized charges on the floating gate. and these devices are applicable to sensing the pH's or biomolecular reactions.

• ETRI Journal
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• v.36 no.1
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• pp.89-98
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• 2014

The integration of digital circuits has a tight relation with the scaling down of silicon technology. The continuous scaling down of the feature size of CMOS devices enters the nanoscale, which results in such destructive effects as short channel effects. Consequently, efforts to replace silicon technology with efficient substitutes have been made. The carbon nanotube field-effect transistor (CNTFET) is one of the most promising replacements for this purpose because of its essential characteristics. Various digital CNTFET-based circuits, such as standard logic cells, have been designed and the results demonstrate improvements in the delay and energy consumption of these circuits. In this paper, a new CNTFET-based 5-input XOR gate based on a novel design method is proposed and simulated using the HSPICE tool based on the compact SPICE model for the CNTFET at the 32-nm technology node. The proposed method leads to improvements in performance and device count compared to the conventional CMOS-style design.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.582-586
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• 2005

This paper presents a new structure of Phase Locked Loop(PLL) which changes its loop bandwidth according to the locking status. The proposed PLL consists of a conventional PLL and, Locking Status Indicator(LSI). The LSI decides the operating bandwidth of loop filler. When the PLL becomes out of lock, the PLL increases the loop bandwidth and achieves fast locking. When the PLL becomes in-lock, this PLL decreases the loop bandwidth and minimizes phase noise output. The PLL can achieve fast locking and low phase noise output at the same time. Proposed PLL's locking time is less than $40{\mu}s$ and spur is 76.1dBc. It is simulated by HSPICE in a Hynix CMOS $0.35{\mu}m$ Process.

• Journal of IKEEE
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• v.27 no.3
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• pp.234-238
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• 2023

In this paper, we propose a time-to-digital converter (TDC) with compensation capability for PVT (process, voltage, and temperature) variations. A typical delay line-based TDC measures time based on the inverter's propagation delay, making it fundamentally sensitive to PVT variations. This paper presents a method to minimize the resolution change of TDC by compensating for the propagation delay caused by the PVT variations. Additionally, it dopts Cyclic Vernier TDC (CVTDC) structure to provide a wide input detection range. The proposed CVTDC with PVT compensation function is designed using a 45nm CMOS process, consumes 8mW of power, offers a TDC resolution of 5 ps, and has an input detection range of about 5.1 ns.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.11 no.5
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• pp.17-30
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• 2001

In this paper, we implemented a scalar multiplier needed at an elliptic curve cryptosystem over standard basis in $GF(2^{163})$. The scalar multiplier consists of a radix-16 finite field serial multiplier and a finite field inverter with some control logics. The main contribution is to develop a new fast finite field inverter, which made it possible to avoid time consuming iterations of finite field multiplication. We used an algorithmic transformation technique to obtain a data-independent computational structure of the Extended Euclid GCD algorithm. The finite field multiplier and inverter shown in this paper have regular structure so that they can be easily extended to larger word size. Moreover they can achieve 100% throughput using the pipelining. Our new scalar multiplier is synthesized using Hyundai Electronics 0.6$\mu\textrm{m}$ CMOS library, and maximum operating frequency is estimated about 140MHz. The resulting data processing performance is 64Kbps, that is it takes 2.53ms to process a 163-bit data frame. We assure that this performance is enough to be used for digital signature, encryption & decryption and key exchange in real time embedded-processor environments.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.77-84
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• 2007

In this parer, a wideband low-noise amplifier (LNA) has been realized in a 0.18mm CMOS technology for the applications of subsampling direct-conversion RF receivers. By exploiting the inverter-type transimpedance input stage with a 3rd-order Chebyshev matching network, the wideband LNA demonstrates the measured results of the -3dB bandwidth of 5.35GHz, the power gain (S21) of $12\sim18dB$, the noise figure (NF) of $6.9\sim10.8dB$, and the broadband input/output impedance matching of less than -10dB/-24dB within the bandwidth, respectively. The chip dissipates 32.4mW from a single 1.8V supply, and occupies the area of $0.56\times1.0mm^2$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.8
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• pp.959-965
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• 2019

In this paper, we design a low noise amplifier to support ka-band satellite communication systems using 65-nm RFCMOS process. The proposed low noise amplifier is designed with high-gain mode and low-gain mode, and is designed to control the gain according to the magnitude of the input signal. In order to reduce the power consumption, the supply voltage of the entire circuit is limited to 1 V or less. We proposed the gain control circuit that consists of the inverter structure. The 3D EM simulator is used to reduce the size of the circuit. The size of the designed amplifier including pad is $0.33mm^2$. The fabricated amplifier has a -7 dB gain control range in 3 dB bandwidth and the reflection coefficient is less than -6 dB in high gain mode and less than -15 dB in low gain mode.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.82-90
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• 2014

In this paper, a couple of 4-channel differential transimpedance amplifier arrays are realized in a standard 0.18um CMOS technology for the applications of linear LADAR(laser detection and ranging) systems. Each array targets 1.25-Gb/s operations, where the current-mode chip consists of current-mirror input stage, a single-to-differential amplifier, and an output buffer. The input stage exploits the local feedback current-mirror configuration for low input resistance and low noise characteristics. Measurements demonstrate that each channel achieves $69-dB{\Omega}$ transimpedance gain, 2.2-GHz bandwidth, 21.5-pA/sqrt(Hz) average noise current spectral density (corresponding to the optical sensitivity of -20.5-dBm), and the 4-channel total power dissipation of 147.6-mW from a single 1.8-V supply. The measured eye-diagrams confirms wide and clear eye-openings for 1.25-Gb/s operations. Meanwhile, the voltage-mode chip consists of inverter input stage for low noise characteristics, a single-to-differential amplifier, and an output buffer. Test chips reveal that each channel achieves $73-dB{\Omega}$ transimpedance gain, 1.1-GHz bandwidth, 13.2-pA/sqrt(Hz) average noise current spectral density (corresponding to the optical sensitivity of -22.8-dBm), and the 4-channel total power dissipation of 138.4-mW from a single 1.8-V supply. The measured eye-diagrams confirms wide and clear eye-openings for 1.25-Gb/s operations.