• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.10 no.10
• /
• pp.1804-1809
• /
• 2006

The aim of this Paper is to describe the implementation of a low-power digital front-End Design (FED) that will act as the core of a stand-alone Power dissipation methodology. The design of digital integrated circuits is a large and diverse area, and we have chosen to focus on low power FED. Designs are made from synthesized logic, and we need to consider the low power digital FED including input clock, buffer, latches, voltage regulator, and capacitance-to-voltage counter which have been integrated onto hish bandwidth communication chips and system. These single- chip micro instruments, implemented in a 0.12um CMOS technology operate with a single 0.9V supply voltage, and can be used to monitor dynamic and static power dissipation, Vesture, acceleration junction temperature (Tj), etc.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.9 no.2
• /
• pp.301-306
• /
• 2005

In this paper, a gain-boosting charge pump(CP) and a latch type voltage controlled oscillato.(VCO) with voltage controlled resistor(VCR) were proposed. The gain-boosting CP achieves good .current matching of less than 11$mu$V voltage difference between 43$mu$V and 32$mu$V in its output range from 0.8V to 2.3V. The VCO with VCR shows good linear characteristics over the range from 1V to 3V. The fabricated VCO exhibits -108dBc/Hz phase noise at a 100kHz and is comparable to that of the integrated LC-tank oscillator. The phase locked loop(PLL) with new circuits was simulated in a 0.35$mu$m CMOS process and showed 150$mu$s locking time.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.11 no.2
• /
• pp.189-194
• /
• 2018

Nowadays most integrated circuits are built using the bulk CMOS technology, but it has much difficulty in further reduction of the power consumption and die size. As a super low-power technology to solve such problems, the SOI technology attracts great attention recently. In this paper, the study results of the temperature dependency of the hot carrier effects in the n-channel MOSFETs fabricated on the thin SOI substrate were discussed. In spite that the devices employed the LDD structure, the hot carrier effects were more serious than expected due to the high series resistance between the channel region and the substrate contact to the ground, and were found to be less serious for the higher temperature with the more phonon scattering in the channel region, which resulted in reducing the hot electron generation.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.5
• /
• pp.280-288
• /
• 2016

Microelectronic product consumers may already be expecting another paradigm shift with smarter phones over smart phones, but the current status of microelectronic manufacturing engineering education (MMEE) in universities hardly makes up the pace for such a fast moving technology paradigm shift. The purpose of MMEE is to educate four-year university graduates to work in the microelectronics industry with up-to-date knowledge and self-motivation. In this paper, we present a comprehensive curriculum for a four-year university degree program in the area of microelectronics manufacturing. Three hands-on experienced-based courses are proposed, along with a methodology for undergraduate students to acquire hands-on experience, towards integrated circuits (ICs) design, fabrication and packaging, are presented in consideration of manufacturing engineering education. Semiconductor device and circuit design course for junior level is designed to cover how designed circuits progress to micro-fabrication by practicing full customization of the layout of digital circuits. Hands-on experienced-based semiconductor fabrication courses are composed to enhance students’ motivation to participate in self-motivated semiconductor fab activities by performing a series of collaborations. Finally, the Microelectronics Packaging course provides greater possibilities of mastered skillsets in the area of microelectronics manufacturing with the fabrication of printed circuit boards (PCBs) and board level assembly for microprocessor applications. The evaluation of the presented comprehensive curriculum was performed with a students’ survey. All the students responded with “Strongly Agree” or “Agree” for the manufacturing related courses. Through the development and application of the presented curriculum for the past six years, we are convinced that students’ confidence in obtaining their desired jobs or choosing higher degrees in the area of microelectronics manufacturing was increased. We confirmed that the hypothesis on the inclusion of handson experience-based courses for MMEE is beneficial to enhancing the motivation for learning.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.12
• /
• pp.59-65
• /
• 2004

A stable reference voltage generator is necessary to the infrared image signal readout circuit(ROIC) to improve noise characteristics of signal originated from infrared devices, that is, to gain good images. In this paper, bandgap circuit operating at cryogenic temperature of 77K for Infrared image ROIC(readout integrated circuit) was first made. It demonstrates practical use possibility through taking measurements and estimations. Bandgap circuit is a representative voltage reference circuit. Most of bandgap reference circuits which are presented so far operate at room temperature, and their characteristic are not suitable for infrared image ROIC operating at liquid nitrogen temperature, 77K. To design bandgap circuit operating at cryogenic temperature, suitable circuit is selected and the parameter characteristics of used devices as temperature change are seen by a theoretical study and fitted at liquid temperature with considering such characteristics. This circuit has been fabricated in the Hynix 0.6um standard CMOS process, and the output voltage measured shows that the stability is 1.042±0.0015V over the temperature range of 60K to 110K and is better than bandgap circuits operated at room temperature.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.11 no.3
• /
• pp.182-189
• /
• 2011

In this work, a tunneling field-effect transistor (TFET) based on heterojunctions of compound and Group IV semiconductors is introduced and simulated. TFETs based on either silicon or compound semiconductors have been intensively researched due to their merits of robustness against short channel effects (SCEs) and excellent subthreshold swing (SS) characteristics. However, silicon TFETs have the drawback of low on-current and compound ones are difficult to integrate with silicon CMOS circuits. In order to combine the high tunneling efficiency of narrow bandgap material TFETs and the high mobility of III-V TFETs, a Type-I heterojunction tunneling field-effect transistor (I-HTFET) adopting $Ge-Al_xGa_{1-x}As-Ge$ system has been optimized by simulation in terms of aluminum (Al) composition. To maximize device performance, we considered a nanowire structure, and it was shown that high performance (HP) logic technology can be achieved by the proposed device. The optimum Al composition turned out to be around 20% (x=0.2).

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.1
• /
• pp.1-6
• /
• 2009

The holding voltage of high-voltage devices under the snapback breakdown condition has been known to be much smaller than the operating voltage. Such characteristics cause high-voltage ICs to be susceptible to the transient latch-up failure in the practical system applications, especially when these devices are used as the ESD(ElectroStatic Discharge) power clamp circuit. A new latchup-free design of the ESD power clamp circuit with stacked-bipolar devices is proposed and successfully verified in a $0.35{\mu}m$ 3.3V/60V BCD(Bipolar-CMOS-DMOS) process to achieve the desired ESD level. The total holding voltage of the stacked-bipolar devices in the snapback breakdown condition can be larger than the operating voltage. Proposed power clamp operates safely because of the high holding voltage. From the measurement on the devices fabricated using a $0.35{\mu}m$ BCD Process, it was observed that the proposed ESD power clamp can provide 800% higher ESD robustness per silicon area as compared to the conventional clamps with a high-voltage diode.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.11
• /
• pp.63-70
• /
• 2008

In this paper, a smart sensor system for the MEMS pressure sensor was developed. A compensation algorithm and programmable calibration circuits were presented to eliminate errors caused by temperature drift of piezoresistive pressure sensors in itself. This system consisted of signal conditioning, calibration, temperature detection, microprocessor, and communication parts and these were integrated into a SOC. A RS-232 interface was employed for monitoring and control of a smart sensor system. The area of fabricated IC is $4.38{\times}3.78\;mm^2$ and a $0.35{\mu}m$ high voltage CMOS process was used. Compensation error for temperature drift of 50 KPa pressure sensors was measured into ${\pm}0.48%$ in the range of $-40^{\circ}C{\sim}150^{\circ}C$. Total power consumption was 30.5 mW.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.42 no.5 s.305
• /
• pp.43-50
• /
• 2005

This paper describes some IC(integrated circuits) design and implementation techniques of low power multi-band Gm-C bandpass filter for body composition analyzer. Proposed BPF(bandpass filter) can be selected from three bands(20 KHz, 50 KHz, 100 KHz) by control signal. To minimize die area, a simple center frequency tuning scheme is used. And to reduce power consumption, operational transconductance amplifier operated in the sub-threshold region is adopted. The proposed BPF is implemented with 0.35 um 2-poly 3-metal standard CMOS technology Chip area is $626.42um\;{\times}\;475.8um$ and power consumption is 700 nW@100 KHz.

• Journal of the Korea Computer Industry Society
• /
• v.2 no.2
• /
• pp.219-228
• /
• 2001

This paper presents the implementation of comparator which are Fail-Safe with respect to faults caused by any single physical defect likely to occur in NMOS and CMOS integrated circuit. The goal is to use it at the Fail-Safe system. First, a new fault model for PLA(Programmable Logic Array) is presented. This model reflects several physical defects in VLSI circuits. It focuses on designs based on PLA because VLSI chips are far too complex to allow detailed analysis of all the possible physical defects that can occur and of the effects on the operation of the circuit. Second, this paper show that these design, which was implemented with 2 level AND_ORor NOR-NOR circuit, are optimal in term of size. And it also present a formal proof that a comparator implemented as NOR-NOR PLA, based on these design, is self-testing with respect to most single faults in the presented fault model. Finally, it discuss the application of the self-testing comparator as a building block for implementing Fail-Safe Adder.