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http://dx.doi.org/10.17661/jkiiect.2018.11.2.189

Dependence of Hot Electron Effects on Temperature in The Deep Submicron SOI n-Channel MOSFETs  

Park, Keun-Hyung (Department of Semiconductor Engineering, Graduate School, Chungbuk National University)
Cha, Ho-Il (Measurement and Analysis Team, National Nanofab Center)
Publication Information
The Journal of Korea Institute of Information, Electronics, and Communication Technology / v.11, no.2, 2018 , pp. 189-194 More about this Journal
Abstract
Nowadays most integrated circuits are built using the bulk CMOS technology, but it has much difficulty in further reduction of the power consumption and die size. As a super low-power technology to solve such problems, the SOI technology attracts great attention recently. In this paper, the study results of the temperature dependency of the hot carrier effects in the n-channel MOSFETs fabricated on the thin SOI substrate were discussed. In spite that the devices employed the LDD structure, the hot carrier effects were more serious than expected due to the high series resistance between the channel region and the substrate contact to the ground, and were found to be less serious for the higher temperature with the more phonon scattering in the channel region, which resulted in reducing the hot electron generation.
Keywords
MOSFET; SOI; Hot carrier effect; Scattering; LDD;
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