• 대한전자공학회논문지SD
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• 제46권8호
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• pp.117-124
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• 2009

본 논문에서는 UWB용 송수신기에서 LO 주파수를 생성해주는 주파수 합성기의 설계 결과를 보여주고 있다. 빠른 채널 스위칭 시간을 만족하기 위해서 1개의 PLL 과 여러 개의 분주기들과 SSB 믹서를 이용한 Sub-Band Generator로 구성하였으며, 전류 소모 및 면적을 최소화 하도록 설계하였다. 또한, 효과적인 주파수 플래닝을 통하여, 1개의 PLL로부터 생성된 636 MHz의 단일 주파수를 입력으로 받아 UWB Band Group 1 에 해당하는 3432 MHz, 3960 MHz, 4488 MHz의 중심 주파수를 발생시키는 Sub-Band Generator를 설계하였다. VCO의 튜닝 범위를 넓히면서도, 해상도를 높이기 위하여 MIM 커패시터, Varactor, DAC를 이용한 새로운 고 해상도 VCO 튜닝 기법을 제안하였다. 또한 본 논문에서 제안한 주파수 합성기의 구조는 기저 대역 모뎀의 ADC를 위한 클록을 공급하기 때문에 모뎀에서 ADC에 클록을 공급하기 위한 PLL을 제거할 수 있는 장점이 있다. VCO의 튜닝 범위는 1.2 GHz이며, 6336 MHz의 출력 주파수에서의 위상 잡음은 1 MHz 옵셋에서 -112 dBc/Hz 로 측정 되었다. UWB용 PLL 및 Sub-Band Generator는 0.13 ${\mu}m$ CMOS 공정으로 설계하였으며, 전체 Chip 면적은 2 ${\times}$ 2 mm2 이다. 전력 소모는 1.2 V 의 공급 전원에서 60 mW이다.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.155-159
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• 2003

This paper presents fully integrated 5 GHz band low phase noise LC tank VCO. The implemented VCO is tuned by integrated PN diode and tuning rage is $5.01{\sim}5.30$ GHz under $0{\sim}3 V$ control voltage. For good phase noise performance, LC filtering technique, common in Si CMOS process, is used, and to prevent degradation of phase noise performance by collector shot-noise and to reduce power dissipation the HBT is biased at low collector current density bias point. The measured phase noise is -87.8 dBc/Hz at 100 kHz offset frequency and -111.4 dBc/Hz at 1 MHz offset frequency which is good performance. Moreover phase noise is improved by roughly 5 dEc by LC filter. It is the first experimental result in InGaP/GaAs HBT process. The figure of merit of the fabricated VCO with LC filter is -172.1 dBc/Hz. It is the best result among 5 GHz InGaP HBT VCOs. Moreover this work shows lower DC power consumption, higher output power and more fixed output power compared with previous 4, 5 GHz band InGaP HBT VCOs.

• 한국정보통신학회논문지
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• 제17권10호
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• pp.2387-2394
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• 2013

이 논문에서는 스퍼의 크기를 줄이기 위해 전압제어발진기(VCO)의 주기마다 전하가 전달되는 새로운 루프필터의 구조를 제안하였다. 일반적인 위상고정루프의 루프필터는 저항과 커패시터를 포함하고 있다. 제안한 루프필터는 커패시터와 스위치만으로도 안정적으로 동작한다. 회로는 1.8V $0.18{\mu}m$ CMOS 공정의 파라미터를 이용하여 HSPICE로 시뮬레이션을 수행하였고 회로의 동작을 검증하였다.

• 전기전자학회논문지
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• 제3권1호
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• pp.39-49
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• 1999

This paper describes a 1 GHz, low-phase-noise CMOS fractional-N frequency synthesizer with an integrated LC VCO. The proposed frequency synthesizer, which uses a high-order delta-sigma modulator to suppress the fractional spurious tones at all multiples of the fractional frequency resolution offset, has 64 programmable frequency channels with frequency resolution of $f_ref/64$. The measured phase noise is as low as -110 dBc/Hz at a 200 KHz offset frequency from a carrier frequency of 980 MHz. The reference sideband spurs are -73.5 dBc. The prototype is implemented in a $0.5{\mu}m$ CMOS process with triple metal layers. The active chip area is about $4mm^2$ and the prototype consumes 43 mW, including the VCO buffer power consumption, from a 3.3 V supply voltage.

• 한국정보기술응용학회:학술대회논문집
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• 한국정보기술응용학회 2005년도 6th 2005 International Conference on Computers, Communications and System
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• pp.99-102
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• 2005

In the paper, a proposed VCO based on bondwire inductances and nMOS varactors was implemented in a standard $0.25\;{\mu}m$ CMOS process. Using the new drain current model and a propagation delay time model equations, the operation speed of CMOS gate will predict the dependence on the load capacitance and the depth of oxide, threshold voltage, the supply voltage, the channel length. This paper describes the result of simulation which calculated a gate propagation delay time by using new drain current model and a propagation delay time model. At the result, When the reverse bias voltage on the substrate changes from 0 voltage to 3 voltage, the propagation delay time is appeared the delay from 0.8 nsec to 1 nsec. When the reverse voltage is biased on the substrate, for reducing the speed delay time, a supply voltage has to reduce. The $g_m$ value of MOSFET is calculated by using new drain current model.

• 전자공학회논문지A
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• 제33A권10호
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• pp.115-122
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• 1996

A 300MHz PLL including FVC (frequency to voltage converter) is designed and fabricated in 0.8$\mu$m CMOS process. In this design, a FVC and a 2nd - order passive filter are added to the conventional charge-pump PLL to improve the acquisition time. The dual-rijng VCO(voltage controlled oscillator) realized in this paper has a frequency range form 208 to 320MHz. Integrated circuits have been fully tested and analyzed in detail and it is proved that pull-in speed is enhanced with the use fo FVC. In VCO range from 230MHz to 310MHz, experimental results show that realized PLL exhibits 4 times faster pull-in speed than that of conventional PLL.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 I
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• pp.270-273
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• 2003

The design, fabrication, and measured result of a 4.7 GHz differential VCO (Voltage Controlled Oscillator) for a 5.2 GHz WLAN (Wireless Local Area Network) applications is presented. The circuit is designed in a 0.35 mm technology employing three metal layers. The design is based on a fully integrated LC tank using spiral inductors. Measured tuning range is 10% of oscillation frequency with a control voltage from 0 to 3.0 V. Oscillation power of $\square$ 2.3 dBm at 4.63 GHz is measured with 21 mA DC current at 3V supply. The phase noise is $\square$ 104.17 dBc/Hz at 1 MHz offset.

• 전기전자학회논문지
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• 제14권1호
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• pp.40-46
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• 2010

This paper describes a clock and data recovery (CDR) circuit that supports dual data rates of 2.7Gbps and 1.62Gbps for DisplayPort standard. The proposed CDR has a dual mode voltage-controlled oscillator (VCO) that changes the operating frequency with a "Mode" switch control. The chip has been implemented using $0.18{\mu}m$ CMOS process. Measured results show the circuit exhibits peak-to-peak jitters of 37ps(@2.7Gbps) and 27ps(@1.62Gbps) in the recovered data. The power dissipation is 80mW at 2.7Gbps rate from a 1.8V supply.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.503-504
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• 2006

This paper presents the design and fabrication of a LC voltage-controlled oscillator (VCO) using 1-poly 6-metal mixed signal CMOS process. To obtain the high-quality factor inductor in LC resonator, patterned-ground shields (PGS) is placed under the symmetric inductor to reduce the effect from image current of resistive Si substrate. Moreover, due to the incapability of using thick top metal layer of which the thickness is over $2{\mu}m$, as used in many RF CMOS process, the structure of dual-metal layer in which we make electrically short circuit between the top metal and the next metal below it by a great number of via materials along the metal traces is adopted. The circuit operated from 2.63 GHz to 3.09 GHz tuned by accumulation-mode MOS varactor. The corresponding tuning range was 460 MHz. The measured phase noise was -115 dBc/Hz @ 1MHz offset at 2.63 GHz carrier frequency and the current consumption and the corresponding power consumption were about 2.6 mA and 4.68 mW respectively.

• 한국정보통신학회논문지
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• 제9권2호
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• pp.301-306
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• 2005

본 논문에서는 gain-boosting 회로를 이용하여 전류 미스매치를 줄일 수 있는 전하펌프와 전압제어 저항기를 사용하여 선형성이 우수한 래치 구조의 전압제어발생기를 제안하여 위상고정루프를 설계하였다. Cain-boosting 전하펌프를 사용한 위상고정루프는 루프필터 출력 전압 구간에서 11$mu$V(최대 43$mu$V, 최소 32$mu$V)의 전압 흔들림 차이를 나타내었다. 전압제어저항기를 이용한 전압제어발진기는 입력전압 동작 구간에서 우수한 선형성을 나타내었다. 또한 제작된 전압제어발진기의 위상 잡음 특성은 -1084Bc/Hz(a)100kHz이며 CMOS 공정으로 만들어진 LC 전압제어발진기와 비슷한 성능을 가진다. 0.35$mu$m CMOS 공정으로 시뮬레이션 하였으며 록킹 시간은 150$mu$s이다.