Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2006.06a
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- Pages.503-504
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- 2006
LC VCO using dual metal inductor in $0.18{\mu}m$ mixed signal CMOS process
- Choi, Min-Seok (School of Electrical Engineering, Seoul National University) ;
- Jung, Young-Ho (School of Electrical Engineering, Seoul National University) ;
- Shin, Hyung-Cheol (School of Electrical Engineering, Seoul National University)
- Published : 2006.06.21
Abstract
This paper presents the design and fabrication of a LC voltage-controlled oscillator (VCO) using 1-poly 6-metal mixed signal CMOS process. To obtain the high-quality factor inductor in LC resonator, patterned-ground shields (PGS) is placed under the symmetric inductor to reduce the effect from image current of resistive Si substrate. Moreover, due to the incapability of using thick top metal layer of which the thickness is over
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