• Proceedings of the IEEK Conference
• /
• 2004.06b
• /
• pp.391-394
• /
• 2004

In this study, highly thermal stable Ni Germanosilicide has been utilized using NiPt alloy and novel NiPt/Co/TiN tri-layer. And, the Ni Germanosilicide Properties were characterized according to different Ge ratio (x) in $Si_{l-x}Ge_x$ for the next generation CMOS application. The sheet resistance of Ni Germanosilicide utilizing pure-Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30 min. Moreover, more degradation was found as the Ge fraction increases. However, using the proposed NiPt/Co/TiN tri-layer, low temperature silicidation and wide range of RTP process window were achieved as well as the improvement of the thermal stability according to different Ge fractions by the subsequent Co and TiN capping layer above NiPt on the $Si_{l-x}Ge_x$. Therefore, highly thermal immune Ni Germanosilicide up to $600^{\circ}C$ for 30 min is utilized using the NiPt/Co/TiN tri-layer promising for future SiGe based ULSI technology.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.17 no.3
• /
• pp.411-424
• /
• 2017

An all-digital delay-locked loop (DLL) for a mobile memory interface, which runs at 0.11-2.5 GHz with a phase-shift capability of $180^{\circ}$, has two internal DLLs: a global DLL which uses a time-to-digital converter to assist fast locking, and shuts down after locking to save power; and a local DLL which uses a phase detector with an adaptive phase sampling window (WPD) to reduce jitter accumulation. The WPD in the local DLL adjusts the width of its sampling window adaptively to control the loop bandwidth, thus reducing jitter induced by UP/DN dithering, input clock jitter, and supply/ground noise. Implemented in a 65 nm CMOS process, the DLL operates over 0.11-2.5 GHz. It locks within 6 clock cycles at 0.11 GHz, and within 17 clock cycles at 2.5 GHz. At 2.5 GHz, the integrated jitter is $954fs_{rms}$, and the long-term jitter is $2.33ps_{rms}/23.10ps_{pp}$. The ratio of the RMS jitter at the output to that at the input is about 1.17 at 2.5 GHz, when the sampling window of the WPD is being adjusted adaptively. The DLL consumes 1.77 mW/GHz and occupies $0.075mm^2$.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.54 no.1
• /
• pp.26-32
• /
• 2017

This paper presents a low power and high resolution incremental delta-sigma ADC that utilizes a passive integrator instead of an opamp-based active integrator. Opamp is a power-hungry block that involves tight design tradeoffs. To avoid the use of active integrator, the s-domain characteristic of an active integrator is first analyzed. Based on the analysis, an active integrator with low gain design is proposed as an alternative design method. To save power even more aggressively, a passive integrator with no static current is proposed. A 1st order single-bit incremental delta-sigma ADC using the proposed passive integrator is implemented in a 65nm CMOS process. Transistor-level simulation shows that the ADC consumes only 0.6uW under 1.2V supply while achieving SNDR of 71dB with 22kHz bandwidth. The estimated total power consumption including digital filter is 6.25uW, and resulting power efficiency is on a par with state-of-the-art A/D converters.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.4
• /
• pp.146-153
• /
• 2008

In this paper, a integrated phase-locked loop(PLL) as a clock multiphase generator for a high speed serial link is designed. The designed PLL keeps the same bandwidth and damping factor by using programmable current mirror in the whole operation frequency range. Also, the close-loop transfer function and VCO's phase-noise transfer function of the designed PLL are obtained with circuit netlists. The self impedance on board-mounted chip is calculated according to sizes and positions of decoupling capacitors. Especially, the detailed self-impedance analysis is carried out between frequency ranges represented the maximum gain in the close-loop transfer function and the maximum gain in the VCO's phase noise transfer function. We shows PLL's jitter characteristics by decoupling capacitor's sizes and positions from this result. The designed PLL has the wide operating range of 0.4GHz to 2GHz in operating voltage of 1.8V and it is designed 0.18-um CMOS process. The reference clock is 100MHz and PLL power consumption is 17.28mW in 1.2GHz.

• Journal of the Institute of Electronics Engineers of Korea CI
• /
• v.45 no.3
• /
• pp.142-148
• /
• 2008

Though a deblocking filter of H.264/AVC provides enhanced image quality by removing blocking artifact on block boundary, the complex filtering operation on this process is a dominant factor of the whole decoding time. In this paper, we designed an ASIP to accelerate deblocking filter operation with the proposed instruction set. We designed a processor based on a MIPS structure with LISA, simulated a deblocking later model, and compared the execution time on the proposed instruction set. In addition, we generated HDL model of the processor through CoWare's Processor Designer and synthesized with TSMC 0.25um CMOS cell library by Synopsys Design Compiler. As the result of the synthesis, the area and delay time increased 7.5% and 3.2%, respectively. However, due to the proposed instruction set, total execution performance is improved by 18.18% on average.

• Journal of Sensor Science and Technology
• /
• v.27 no.2
• /
• pp.93-98
• /
• 2018

In this paper, an energy-efficient 11.49-bit successive approximation register (SAR) capacitance-to-digital converter (CDC) for capacitive sensors with a figure of merit (FoM) of 31.6 pJ/conversion-step is presented. The CDC employs a SAR algorithm to obtain low power consumption and a simplified structure. The proposed circuit uses a capacitive sensing amplifier (CSA) and a dynamic latch comparator to achieve parasitic capacitance-insensitive operation. The CSA adopts a correlated double sampling (CDS) technique to reduce flicker (1/f) noise to achieve low-noise characteristics. The SAR algorithm is implemented in dual operating mode, using an 8-bit coarse programmable capacitor array in the capacitance-domain and an 8-bit R-2R digital-to-analog converter (DAC) in the charge-domain. The proposed CDC achieves a wide input capacitance range of 29.4 pF and a high resolution of 0.449 fF. The CDC is fabricated in a $0.18-{\mu}m$ 1P6M complementary metal-oxide-semiconductor (CMOS) process with an active area of 0.55 mm2. The total power consumption of the CDC is $86.4{\mu}W$ with a 1.8-V supply. The SAR CDC achieves a measured 11.49-bit resolution within a conversion time of 1.025 ms and an energy-efficiency FoM of 31.6 pJ/step.

• The Transactions of the Korea Information Processing Society
• /
• v.4 no.1
• /
• pp.311-323
• /
• 1997

This paper presents a fast fault simulation system for detecting stuck-at faults in mixed-level combinational logic circuits with gale level and switch -level primitives. For a practical fault simulator, the types are not restricted to static switch-level and/or gate-level circuits, but include dynamic switch-level circuits. To efficiently handle the multiple signal contention problems at wired logic elements, we propose a six-valued logic system and its logic calculus which are used together with signal strength information. As a basic algorithm for the fault simulation process, a well -known gate-level parallel pattern single fault propagation(PPSFP) technique is extended to switch-level circuits in order to handle pass-transistor circuits and precharged logic circuits as well as static CMOS circuits. Finally, we demonstrate the efficiency of our system through the experimental results for switch-level ISCAS85 benchmark combinational circuits and various industrial mixed-level circuits.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.3
• /
• pp.129-134
• /
• 2018

Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.2
• /
• pp.391-396
• /
• 2013

In this paper, for HEVC decoding, an SAO hardware design with less processing time and reduced area is proposed. The proposed SAO hardware architecture introduces the design processing $8{\times}8$ CU to reduce the hardware area and uses internal registers to support $64{\times}64$ CU processing. Instead of previous top-down block partitioning, it uses bottom-up block partitioning to minimize the amount of calculation and processing time. As a result of synthesizing the proposed architecture with TSMC $0.18{\mu}m$ library, the gate area is 30.7k and the maximum frequency is 250MHz. The proposed SAO hardware architecture can process the decode of a macroblock in 64 cycles.

• The Journal of the Korea Contents Association
• /
• v.10 no.6
• /
• pp.72-79
• /
• 2010

In this paper, we propose the data cache architecture with a write buffer for a 32bit asynchronous embedded processor. The data cache consists of CAM and data memory. It accelerates data up lood cycle between the processor and the main memory that improves processor performance. The proposed data cache has 8 KB cache memory. The cache uses the 4-way set associative mapping with line size of 4 words (16 bytes) and pseudo LRU replacement algorithm for data replacement in the memory. Dirty register and write buffer is used for write policy of the cache. The designed data cache is synthesized to a gate level design using $0.13-{\mu}m$ process. Its average hit rate is 94%. And the system performance has been improved by 46.53%. The proposed data cache with write buffer is very suitable for a 32-bit asynchronous processor.