Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Thermal Stability Improvement or Ni Germanosilicide Using NiPt/Co/TiN and the Effect of Ge Fraction (x) in $Si_{l-x}Ge_x$

NiPt/Co/TiN을 이용한 Ni Germanosilicide 의 열안정성 향상 및 Ge 비율 (x) 에 따른 특성 분석

  • Yun Jang-Gn (Dept. of Electronics Engineering, Chungnam National University) ;
  • Oh Soon-Young (Dept. of Electronics Engineering, Chungnam National University) ;
  • Huang Bin-Feng (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kim Yong-Jin (Dept. of Electronics Engineering, Chungnam National University) ;
  • Ji Hee-Hwan (Dept. of Electronics Engineering, Chungnam National University) ;
  • Kim Yong-Goo (Dept. of Electronics Engineering, Chungnam National University) ;
  • Cha Han-Seob (System IC R & D Division. Hynix Semiconductor Inc.) ;
  • Heo Sang-Bum (System IC R & D Division. Hynix Semiconductor Inc.) ;
  • Lee Jeong-Gun (System IC R & D Division. Hynix Semiconductor Inc.) ;
  • Wang Jin-Suk (Dept. of Electronics Engineering, Chungnam National University) ;
  • Lee Hi-Deok (Dept. of Electronics Engineering, Chungnam National University)
  • 윤장근 (충남대학교, 전자공학과) ;
  • 오순영 (충남대학교, 전자공학과) ;
  • 황빈봉 (충남대학교, 전자공학과) ;
  • 김용진 (충남대학교, 전자공학과) ;
  • 지희환 (충남대학교, 전자공학과) ;
  • 김용구 (충남대학교, 전자공학과) ;
  • 차한섭 (하이닉스 반도체, 시스템 IC R & D 부) ;
  • 허상범 (하이닉스 반도체, 시스템 IC R & D 부) ;
  • 이종근 (하이닉스 반도체, 시스템 IC R & D 부) ;
  • 왕진석 (충남대학교, 전자공학과) ;
  • 이희덕 (충남대학교, 전자공학과)
  • Published : 2004.06.01
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Abstract

In this study, highly thermal stable Ni Germanosilicide has been utilized using NiPt alloy and novel NiPt/Co/TiN tri-layer. And, the Ni Germanosilicide Properties were characterized according to different Ge ratio (x) in $Si_{l-x}Ge_x$ for the next generation CMOS application. The sheet resistance of Ni Germanosilicide utilizing pure-Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30 min. Moreover, more degradation was found as the Ge fraction increases. However, using the proposed NiPt/Co/TiN tri-layer, low temperature silicidation and wide range of RTP process window were achieved as well as the improvement of the thermal stability according to different Ge fractions by the subsequent Co and TiN capping layer above NiPt on the $Si_{l-x}Ge_x$. Therefore, highly thermal immune Ni Germanosilicide up to $600^{\circ}C$ for 30 min is utilized using the NiPt/Co/TiN tri-layer promising for future SiGe based ULSI technology.

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