[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/JKEM.2018.31.3.129

High-Mobility Ambipolar Polymer Semiconductors by Incorporation of Ionic Additives for Organic Field-Effect Transistors and Printed Electronic Circuits

Lee, Dong-Hyeon (Department of Graphic Arts Information Engineering, Pukyong National University)
Moon, Ji-Hoon (Department of Graphic Arts Information Engineering, Pukyong National University)
Park, Jun-Gu (Department of Graphic Arts Information Engineering, Pukyong National University)
Jung, Ji Yun (Department of Graphic Arts Information Engineering, Pukyong National University)
Cho, Il-Young (Department of Graphic Arts Information Engineering, Pukyong National University)
Kim, Dong Eun (Department of Graphic Arts Information Engineering, Pukyong National University)
Baeg, Kang-Jun (Department of Graphic Arts Information Engineering, Pukyong National University)

Publication Information

Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.31, no.3, 2018 , pp. 129-134 More about this Journal

Abstract

Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.

Keywords

Organic field-effect transistors; Ionic additive; Ambipolar; CMOS-like; Printed circuits;

Citations & Related Records

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