• Title/Summary/Keyword: CMOS DAC

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Design of 10-bit 10MS/s Time-Interleaved Flash-SAR ADC Using Sharable MDAC

  • Do, Sung-Han;Oh, Seong-Jin;Seo, Dong-Hyeon;Lee, Juri;Lee, Kang-Yoon
    • IEIE Transactions on Smart Processing and Computing
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    • v.4 no.1
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    • pp.59-63
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    • 2015
  • This paper presents a 10-bit 10 MS/s Time-Interleaved Flash-SAR ADC with a shared Multiplying DAC. Using shared MDAC, the total capacitance in the SAR ADC decreased by 93.75%. The proposed ADC consumed 2.28mW under a 1.2V supply and achieved 9.679 bit ENOB performance. The ADC was implemented in $0.13{\mu}m$ CMOS technology. The chip area was $760{\times}280{\mu}m^2$.

Digital Error Correction for a 10-Bit Straightforward SAR ADC

  • Rikan, Behnam Samadpoor;Abbasizadeh, Hamed;Do, Sung-Han;Lee, Dong-Soo;Lee, Kang-Yoon
    • IEIE Transactions on Smart Processing and Computing
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    • v.4 no.1
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    • pp.51-58
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    • 2015
  • This paper proposes a 10-b SAR ADC. To increase the conversion speed and reduce the power consumption and area, redundant cycles were implemented digitally in a capacitor DAC. The capacitor DAC algorithm was straightforward switching, which included digital error correction steps. A prototype ADC was implemented in CMOS $0.18-{\mu}m$ technology. This structure consumed $140{\mu}W$ and achieved 59.4-dB SNDR at 1.25MS/s under a 1.8-V supply. The figure of merit (FOM) was 140fJ/conversion-step.

Multi-Channel Audio CODEC with Channel Interference Suppression

  • Choi, Moo-Yeol;Lee, Sung-No;Lee, Myung-Jin;Lee, Yong-Hee;Park, Ho-Jin;Kong, Bai-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.6
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    • pp.608-614
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    • 2015
  • A multi-channel audio CODEC with inter-channel interference suppression is proposed, in which channel switching noise-referred sampling error is significantly reduced. It also supports a coarse/fine mode operation for fast frequency tracking with good harmonic performance. The proposed multi-channel audio CODEC was designed in a 65 nm CMOS process. Measured results indicated that SNR and SNDR of ADC were 93 dB and 84dB, respectively, with SNDR improved by 43 dB. Those of DAC were 96 dB and 87 dB, respectively, with SNDR improved by 45 dB when all the channels are running independently.

A Mismatch-Insensitive 12b 60MS/s 0.18um CMOS Flash-SAR ADC (소자 부정합에 덜 민감한 12비트 60MS/s 0.18um CMOS Flash-SAR ADC)

  • Byun, Jae-Hyeok;Kim, Won-Kang;Park, Jun-Sang;Lee, Seung-Hoon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.7
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    • pp.17-26
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    • 2016
  • This work proposes a 12b 60MS/s 0.18um CMOS Flash-SAR ADC for various systems such as wireless communications and portable video processing systems. The proposed Flash-SAR ADC alleviates the weakness of a conventional SAR ADC that the operation speed proportionally increases with a resolution by deciding upper 4bits first with a high-speed flash ADC before deciding lower 9bits with a low-power SAR ADC. The proposed ADC removes a sampling-time mismatch by using the C-R DAC in the SAR ADC as the combined sampling network instead of a T/H circuit which restricts a high speed operation. An interpolation technique implemented in the flash ADC halves the required number of pre-amplifiers, while a switched-bias power reduction scheme minimizes the power consumption of the flash ADC during the SAR operation. The TSPC based D-flip flop in the SAR logic for high-speed operation reduces the propagation delay by 55% and the required number of transistors by half compared to the conventional static D-flip flop. The prototype ADC in a 0.18um CMOS demonstrates a measured DNL and INL within 1.33LSB and 1.90LSB, with a maximum SNDR and SFDR of 58.27dB and 69.29dB at 60MS/s, respectively. The ADC occupies an active die area of $0.54mm^2$ and consumes 5.4mW at a 1.8V supply.

CMOS Integrated Capacitive Fingerprint Sensor with Pixel-level Auto Calibration Circuit (픽셀단위 자동보상회로가 적용된 용량형 지문센서의 CMOS구현)

  • Jung, Seung-Min
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.3 s.357
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    • pp.65-71
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    • 2007
  • We propose a pixel-level automatic calibration circuit scheme that initializes a capacitive fingerprint sensor LSI to eliminate the influence of the surface condition and environment, which is degraded by dirt during long-time use, process variation and ambient temperature. The sample chip is fabricated on $0.35{\mu}m$ standard CMOS process. The calibration is executed by optimizing the reference voltage in each pixel to make the sensor signals of all pixels the same. The calibration control circuit is composed of the sensing circuit and charge pumping circuit, and calibrates all pixels in a short time. 16-level gray scale fingerprint images can be captured to increase the accuracy of identification. This confirms that the scheme is effective for capturing consistent clear images during long-time use.

Full CMOS Single Supply PLC SoC ASIC with Integrated Analog Front-End

  • Nam, Chul;Pu, Young-Gun;Kim, Sang-Woo;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.2
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    • pp.85-90
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    • 2009
  • This paper presents a single supply PLC SoC ASIC with a built-in analog Front-end circuit. To achieve the low power consumption along with low cost, this PLC SoC employs fully CMOS Analog Front End (AFE) and several LDO regulators (LDOs) to provide the internal power for Logic Core, DAC and Input/output Pad driver. The receiver part of the AFE consists of Pre-amplifier, Gain Amplifier and 1 bit Comparator. The transmitter part of the AFE consists of 10 bit Digital Analog Converter and Line Driver. This SoC is implemented with 0.18 ${\mu}m$ 1 Poly 5 Metal CMOS Process. The single supply voltage is 3.3 V and the internal powers are provided using LDOs. The total power consumption is below 30 mA at stand-by mode to meet the Eco-Design requirement. The die size is 3.2 $\times$ 2.8 $mm^{2}$.

A Return-to-zero DAC with Tri-state Switching Scheme for Multiple Nyquist Operations

  • Yun, Jaecheol;Jung, Yun-Hwan;Yoo, Taegeun;Hong, Yohan;Kim, Ju Eon;Yoon, Dong-Hyun;Lee, Sung-Min;Jo, Youngkwon;Kim, Yong Sin;Baek, Kwang-Hyun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.3
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    • pp.378-386
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    • 2017
  • A return-to-zero (RZ) digital-to-analog converter (DAC) with a tri-state switching scheme is proposed in this paper. The proposed scheme provides a triple weight output for RZ operation by using a conventional differential current switch and simple pseudo-differential F/Fs. The RZ function is realized with only two additional transistors in each F/F cell, which results in a power dissipation increase of less than 5%. To verify the performance of the proposed method, a 10-bit RZ DAC is fabricated using standard 180-nm CMOS technology. Measured results show that the worst SFDR performances are 60 dBc and 55 dBc in the 1st and 2nd Nyquist bands, respectively, when operating at 650 MHz clock frequency. The total power consumption is 64 mW, and the active area occupies $0.25mm^2$.

Design of a Low-Power 8-bit 1-MS/s CMOS Asynchronous SAR ADC for Sensor Node Applications (센서 노드 응용을 위한 저전력 8비트 1MS/s CMOS 비동기 축차근사형 ADC 설계)

  • Jihun Son;Minseok Kim;Jimin Cheon
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.16 no.6
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    • pp.454-464
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    • 2023
  • This paper proposes a low-power 8-bit asynchronous SAR ADC with a sampling rate of 1 MS/s for sensor node applications. The ADC uses bootstrapped switches to improve linearity and applies a VCM-based CDAC switching technique to reduce the power consumption and area of the DAC. Conventional synchronous SAR ADCs that operate in synchronization with an external clock suffer from high power consumption due to the use of a clock faster than the sampling rate, which can be overcome by using an asynchronous SAR ADC structure that handles internal comparisons in an asynchronous manner. In addition, the SAR logic is designed using dynamic logic circuits to reduce the large digital power consumption that occurs in low resolution ADC designs. The proposed ADC was simulated in a 180-nm CMOS process, and at a 1.8 V supply voltage and a sampling rate of 1 MS/s, it consumed 46.06 𝜇W of power, achieved an SNDR of 49.76 dB and an ENOB of 7.9738 bits, and obtained a FoM of 183.2 fJ/conv-step. The simulated DNL and INL are +0.186/-0.157 LSB and +0.111/-0.169 LSB.

Design of a 12 Bit CMOS Current Cell Matrix D/A Converter (12비트 CMOS 전류 셀 매트릭스 D/A 변환기 설계)

  • Ryu, Ki-Hong;Yoon, Kwang-Sub
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.8
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    • pp.10-21
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    • 1999
  • This paper describes a 12bit CMOS current cell matrix D/A converter which shows a conversion rate of 65MHz and a power supply of 3.3V. Designed D/A converter utilizes current cell matrix structure with good monotonicity characteristic and fast settling time, and it is implemented by using the tree structure bias circuit, the symmetrical routing method with ground line and the cascode current switch to reduce the errors of the conventional D/A converter caused by a threshold voltage mismatch of current cells and a voltage drop of the ground line. The designed D/A converter was implemented with a $0.6{\mu}m$ CMOS n-well technology. The measured data shows a settling time of 20ns, a conversion rate of 50 MHz and a power dissipation of 35.6mW with a single power supply of 3.3V. The experimental SNR, DNL, and INL of the D/A converter is measured to be 55dB, ${\pm}0.5LSB$, and ${\pm}2LSB$, respectively.

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A Study of a High Performance Capacitive Sensing Scheme Using a Floating-Gate MOS Transistor

  • Jung, Seung-Min
    • Journal of information and communication convergence engineering
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    • v.10 no.2
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    • pp.194-199
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    • 2012
  • This paper proposes a novel scheme of a gray scale fingerprint image for a high-accuracy capacitive sensor chip. The conventional grayscale image scheme uses a digital-to-analog converter (DAC) of a large-scale layout or charge-pump circuit with high power consumption and complexity by a global clock signal. A modified capacitive detection circuit for the charge sharing scheme is proposed, which uses a down literal circuit (DLC) with a floating-gate metal-oxide semiconductor transistor (FGMOS) based on a neuron model. The detection circuit is designed and simulated in a 3.3 V, 0.35 ${\mu}m$ standard CMOS process. Because the proposed circuit does not need a comparator and peripheral circuits, the pixel layout size can be reduced and the image resolution can be improved.