• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.2 s.344
• /
• pp.96-104
• /
• 2006

This paper presents design methodology, encient verification and implementation of a CAN protocol controller. The design methodology uses a heuristic technique to make the design flexible and cost effective. Using the design methodology, we created architecture for a CAN controller which has flexible and low cost features. For faster time-to-market and reliable operation of the designed CAN protocol controller, we p개posed a three-step verification process which uses three different kinds of verification techniques. The goal of this three-step verification is to reduce the number of test sequences in order to rapidly implement the design without loss of reliability for faster time-to-market. The designed CAN protocol controller was fabricated using a 0.35 micrometer CMOS technology.

• Journal of Sensor Science and Technology
• /
• v.23 no.4
• /
• pp.284-289
• /
• 2014

In this paper, modeling of a gate/body-tied (GBT) PMOSFET photodetector with built-in transfer gate is performed. It can control the photocurrent with a high-sensitivity. The GBT photodetector is a hybrid device consisted of a MOSFET, a lateral BJT, and a vertical BJT. This device allows for amplifying the photocurrent gain by $10^3$ due to the GBT structure. However, the operating parameters of this photodetector, including its photocurrent and transfer characteristics, were not known because modeling has not yet been performed. The sophisticated model of GBT photodetector using a process simulator is not compatible with circuit simulator. For this reason, we have performed SPICE modeling of the photodetector with reduced complexity using Cadence's Spectre program. The proposed modeling has been demonstrated by measuring fabricated chip by using 0.35 im 2-poly 4-metal standard CMOS technology.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.47 no.11
• /
• pp.97-104
• /
• 2010

This paper presents a high performance 32-bit single core AES architecture. The proposed architecture employs a 5-stage pipeline: four stages in the ShiftRows/InvShiftRows module, and one stage in the MixColumn/InvMixColumn module. Circuit size reduction has been achieved through merging of the shift rows and inverse shift rows. The mix column and inverse mix column share the same resources. Three 32-bit registers replace the conventional ten 32-bit registers in the RCON architecture. The proposed architecture has been implemented in Verilog HDL, and yields 415 Mbits/s throughput with the circuit size of 13764 gate equivalents on the 0.18um CMOS process technology. This high performance architecture is suitable for wireless network router applications.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.2
• /
• pp.355-362
• /
• 2013

A hardware implementation of phase calculator for extracting 3D depth image from TOF(Time-Of-Flight) sensor is described. The designed phase calculator, which adopts a pipelined architecture to improve throughput, performs arctangent operation using vectoring mode of CORDIC algorithm. Fixed-point MATLAB modeling and simulations are carried out to determine the optimized bit-widths and number of iteration. The designed phase calculator is verified by FPGA-in-the-loop verification using MATLAB/Simulink, and synthesized with a TSMC 0.18-${\mu}m$ CMOS cell library. It has 16,000 gates and the estimated throughput is about 9.6 Gbps at 200Mhz@1.8V.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.8 no.5
• /
• pp.1058-1067
• /
• 2004

Java virtual machine provides code compactness, simple execution engines, and platform-independence which are important features for small devices such as mobile or embedded device, but it has a big problem, such as low throughput due to stack-oriented operation. In this paper hardware lava accelerator targeted for mobile or embedded application is designed to eliminate the slow speed problem of lava virtual machine. The designed lava accelerator can execute 81 instructions of Java virtual machine(JVM)'s opcodes and be used as Java coprocessor of conventional 32-bit RISC processor with efficient coprocessor interface and instruction buffer. It consists of about 14,300 gates and its maximum operating frequency is about 50 Mhz under 0.35um CMOS technology.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.3
• /
• pp.155-165
• /
• 2001

By suggesting a mixed-mode transient simulation method utilizing a 2-dimensional device simulator, we have analyzed CDM ESD Phenomena in CMOS chips, which utilize NMOS transistors as ESD protection devices. By analyzing the simulation results, the mechanisms leading to device failures in CDM discharge and the differences in discharge characteristics with different polarities of stored charges have been explained in detail. The effects of changes in interconnection resistance values on the gate-oxide failure at input buffers, which is the most serious problem in CDM discharge, have been examined. Also improvements in discharge characteristics with addition of the NMOS transistor for input-buffer protection have been examined.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.6 no.2
• /
• pp.330-338
• /
• 2002

A speech recognition chip that can recognize a small vocabulary as a word-level has been designed. It is composed of EPD(Start and End-point detection) block, LPC block, DTW block and external memory interface block. It is made of 126,938 gates on 4x4mm2 area with a CMOS 0.35um TLM process. The speed of the chip varies from 5MHz to 60MHz because of its specific hardware designed for the purpose. It can compare 100,000 voices as a small vocabulary which has approximately 50∼60 frames at the clock of 5MHz and also up to 1,200,000 voices at the clock of 60MHz.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.24 no.8A
• /
• pp.1245-1251
• /
• 1999

A 1.25Gb/s path control switch chip has been designed and implemented with COMPASS tool and 0.8${\mu}{\textrm}{m}$ CMOS gate-array of LG semiconductor. This device controls the path of digital singnals in SDH-based transmission system. The proposed switch chip is suitable for self-healing operations both in a linear network and an unidirectonal ring, The self-healing operation of the switch is effectively done by the configuration information stored in the resisters of the switch. The test device adapted to SDH-based transmission system, show immediate restoration and a 10-11~10-12 bit error raito. And 2.5Gb/s or more high throughput can be realized by combining rwo identical or more switches with the parallel architecture.

• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.29-32
• /
• 2001

In this paper, the thermal oxidation behaviors and the electrical characteristics of the thermal oxide grown on SiC are discussed. For these studies the oxide layers with various thickness were on SiC in wet $O_2$ or dry $O_2$ at l15$0^{\circ}C$ and the MOS capacitors using the 350$\AA$ gate oxide grown in wet $O_2$ were fabricated and electrically characterized. It was found from the experimental results that the oxidation rate of SiC with the Si-face and with the carbon-face were about 10% and 50% of oxidation rate of Si. The C-V measurement results of the SiC oxide showed abnormal hysterisis properties which had ever been not observed for the Si oxide. And the hysterisis behavior was seen more significant when initial bias voltage was more negative or more positive. The hysterisis property of the SiC oxide was believed to be due the substantial amount of the deep level traps to exist at the interface between the oxide and the SiC substrate. The leakage of the SiC oxide was found to be one order larger than the Si oxide, but the breakdown strength was almost equal to that of the Si oxide.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.7
• /
• pp.464-472
• /
• 2001

Asymmetric n-MOSFET＇s for improving packing density have been fabricated with 0.35 ${\mu}{\textrm}{m}$ CMOS process. Electrical characteristics of asymmetric n-MOSFET show a lower saturation drain current and a higher linear resistance compared to those of symmetric devices. Substrate current of asymmetric MOSFET is lower than that of symmetric devices. Asymmetric n-MOSFET＇s have been modeled using a parasitic resistance associated with abnormally structured drain or source and a conventional n-MOSFET model. MEDICI simulation has been done for accuracy of this modeling. Simulated values of reverse as we11 as forward saturation drain current show good agreement with measured values for asymmetric device.