References
- Patrice Grignoux and Randall L. Geiger, 'Modeling of MOS Transistors with Nonrectangular-Gate Geometries,' IEEE Trans. Electron Devices, vol. ED-29, pp. 1261-1269, August 1982
- Jin-Kyu Park, Chang-Hoon Choi, Young-Kwan Park, Chang-Sub Lee, Jeong-Taek Kong, Moon-Ho Kim, Kyung-Ho Kim, Taek-Soo Kim, and Sang-Hoon Lee, 'A Characterization Tool for Current Degradation Effects of Abnormally Structured MOS Transistors,' Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, pp. 41-43, 1997 https://doi.org/10.1109/SISPAD.1997.621331
- Jaesung Lee, Kwangsoo Kim, Jinsu Han, Jaegab Kim and Hunsub Park, 'Electrical Characteristics of Ti-Salicided n-MOSFETs with Asymmetric Source/Drain Regions,' 1997 International Sym on VLSI Technology, System and Applications, pp. 34-36, June 1997
-
T. Ohzone and N. Matsuyama, 'Electrical characteristics of CMOSFET's with gates crossing source/drain regions at
$90^{\circ}\;and\;45^{\circ}$ ,' Proc. IEEE 1995 Int. Conf. Microelectrion Test Structures, vol. 8, pp. 197-192, 1995 - Hyunsang Hwang, Hyungsoon Shin, Dae-Gwan Kang, and Dong-Hyuk Ju, 'Current-crowding effect in diagonal MOSFET's,' IEEE Electron Device Letters, vol. 14, no. 6, pp. 289-291, 1993 https://doi.org/10.1109/55.215201
- Tohru Mogami, Hitoshi Wakabayashi, Yukisige Saito, Toru Tatsumi, Takeo Matsuki, and Takemitsu Kunio, 'Low-Resistance Self-Aligned Ti-Silicide Technology for Sub-Quarter Micron CMOS Devices,' IEEE Trans. Electron Devices, vol. 43, pp. 932-939, 1996 https://doi.org/10.1109/16.502126
-
Jorge A. Kittl, Q. Z. Hong, M. Rodder, and T. Breedijk, 'Novel Self-Aligned Ti Silicide Process of Scaled CMOS Technologies with Low Sheet Resistance at
$0.06-{\mu}m$ Gate Lengths,' IEEE Electron Device Letters, vol. 19, pp. 151-153, May 1998 https://doi.org/10.1109/55.669732 - Ron M. Kielkowski, SPICE Practical Device Modeling, McGraw-Hill Inc, 1995
- Daniel P. Foty, MOSFET MODELING WITH SPICE Principles and Practice, Prentice-Hall Inc, 1997
- A. El-Hennawy and Al-Ghamdi, 'Performance improvement of MOSFET lasers by using trapezoidal gate MOSFET's,' Proc. Inst. Elect. Eng., Circuits Device Syst., vol. 141, 1994, pp. 69-72 https://doi.org/10.1049/ip-cds:19949813