Modeling of Gate/Body-Tied PMOSFET Photodetector with Built-in Transfer Gate
![]() |
Lee, Minho
(School of Electronics Engineering, Kyungpook National University)
Jo, Sung-Hyun (School of Electronics Engineering, Kyungpook National University) Bae, Myunghan (School of Electronics Engineering, Kyungpook National University) Choi, Byoung-Soo (School of Electronics Engineering, Kyungpook National University) Choi, Pyung (School of Electronics Engineering, Kyungpook National University) Shin, Jang-Kyoo (School of Electronics Engineering, Kyungpook National University) |
1 | W. Zhang, M. Chan, S. Fung, and Ping K. Ko, "Performance of a CMOS compatible lateral bipolar photodetector on SOI substrate", IEEE Electron Device Letters, Vol. 19, No. 11, pp. 435-437, 1998. DOI ScienceOn |
2 | W. Zhang, "High gain CMOS image sensor design and fabrication on SOI and bulk technology", The Hong Kong university of science and Technology, Ph.D. thesis, 2000. |
3 | W. Zhang, "A novel high-gain CMOS iamge sensor using floating n-well/gate tied PMOSFET", IEEE International Electron Devices Meeting, pp. 1023-1025, 1998. |
4 | Y. W. Chang and Y. T. Huang, "The ring-shaped CMOSbased phototransistor with high responsivity for the UV/ Blue spectral range", IEEE Photonics Technology Letters, Vol. 21, No. 13, pp. 899-901, 2009. DOI ScienceOn |
5 | Y. Huang and R. Hornsey, "Current-mode CMOS image sensor using lateral bipolar phototransistors", IEEE Trans. Electron Devices, Vol. 50, No. 12, pp. 2570-2573, 2003. DOI ScienceOn |
6 | R. W. Sandage and J. A. Connelly, "A fingerprint optodetector using lateral bipolar phototransistor in a standard CMOS process", IEEE International Electron Devices Meeting, pp. 171-174, 1995. |
7 | F. G. O'Hara, Jan J. H. van den Biesen, H. C. de Graaff, W. J. Kloosterman, and J. Barton Foley, "MODELLA-A new physics-based compact model for lateral p-n-p transistors", IEEE Transaction on Electron Devices, Vol. 39, No. 11, pp. 2553-2561, 1992. DOI ScienceOn |
8 | J. H. Park, S. H. Seo, I. S. Wang, J. K. Shin, and P. Choi, "Highly sensitive PMOSFET photodetector and its application to CMOS active pixel sensor", Sensors and Materials, Vol. 15, pp. 361-370, 2003. |
9 | H. Y. Hyun, J. S. Kong, and J. K. Shin, "Low-noise logarithmic active pixel sensor using a gate/n-well-tied PMOSFET-type photodetector", Sensors and Materials, Vol. 20, pp. 381-387, 2008. |
10 | J. T. Jung, S. H. Jo, S. H. Seo, M. H. Bae, and J. K. Shin, "Highly sensitive gate/body-tied p-channel metal oxide semiconductor field effect transistor-type photodetector with an overlapping control gate", Japanese Journal of Applied Physics, Vol. 51, pp. 02BG06, 2012. DOI |
11 | S. Y. Lee, S. H. Seo, J. S. Kong, S. H. Jo, K. H. Choi, P. Choi, and J. K. Shin, "Dynamic range extension of the nwell/ gate-tied PMOSFET-type photodetector with a built-in transfer gate", J. Sensor Sci. & Tech., Vol. 19. No. 4, pp. 328-335, 2010. |
12 | E. A. Vittoz, "MOS transistors operated in the lateral bipolar mode and their application in CMOS technology", IEEE Journal of Solid-State Circuits, Vol. 18, No. 3, pp. 273-279, 1983. DOI ScienceOn |
13 | Y. J. Kook, J. H. Cheon, J. H. Lee, Y. J. Park, "A novel bipolar imaging device-BASIC (BAse stored imager in CMOS process", IEEE Transactions on Electron Devices, Vol. 50, No. 11, pp. 2189-2195, 2003. DOI ScienceOn |
14 | H. Yamamoto, K. Taniguchi, and C. Hamaguchi, "Highsensitivity SOI MOS photodetector with self-amplification", Japanese Journal of Applied Physics, Vol. 35, pp. 1382-1386, 1996. DOI |
15 | M. M. El-Desouki, M. J. Deen, Q. Y. Fang, L. W. C. Liu, F. Tse, and D. Armstrong, "CMOS image sensors for highspeed applications", Journal of Sensors, Vol. 9, No. 1, pp. 430-444, 2009. |
16 | K. Murari, R. Etienne, N. Thakor, and G. Cauwenberghs, "Which photodioe to use: A comparison of CMOS-compatible structures", IEEE Sensors Journal, Vol. 9, No. 7, pp. 752-760, 2009. DOI ScienceOn |
17 | H. S. Wong, "Technology and device scaling considerations for CMOS imagers", IEEE Transactions on Electron Devices, Vol. 43, No. 12, pp. 2131-2142, 1996. DOI ScienceOn |
18 | I. Brouk and Y. Nemirovsky, "Dimensional effects in CMOS photodiodes", Solid-State Electronics, Vol. 46, No. 1, pp. 19-28, 2002. DOI ScienceOn |
19 | H. Tian, B. Fowler, and A. E. Gamal, "Analysis of temporal noise in CMOS photodiode active pixel sensor", Journal of Solid-State Circuits, Vol. 36, No. 1, pp. 92-101, 2001. DOI ScienceOn |
20 | Y. Ardeshirpour, M. J. Deen, and S. Shirani, "Evaluation of complementary metal-oxide semiconductor based photodetectors for low-level light detection", Journal of Vacuum Science & Technology A, Vol. 24, No. 3, pp. 860-865, 2006. DOI ScienceOn |
21 |
Y. Maruyama and E. Charbon, "An all-digital, time-gated 128 |
22 | N. Faramarzpour, M. J. Deen, S. Shirani, and Q. Fang, "Fully integrated single photon avalanche diode detector in standard CMOS 0.18 im technology", IEEE Transactions on Electron Devices, Vol. 55, No. 3, pp. 760-767, 2008. DOI ScienceOn |
23 | S. H. Seo, K. D. Kim, M. W. Seo, J. S. Kong, J. K. Shin, and P. Choi, "Optical characteristics of an n-well/gate-tied PMOSFET-type photodetector with built-in transfer gate for CMOS image sensor", Sensors and Materials, Vol. 19, No. 7, pp. 435-444, 2007. |
24 | N. Nelson, D. Sander, M. Dandin, S. Prakash, A. Sarje, and P. Abshire, "Handheld fluorometers for Lab-on-a-Chip applications", IEEE Transactions on Biomedical Circuits and Systems, Vol. 3, No. 2, pp. 99-107, 2009. |
25 | J. S. Kong, S. H. Jo, S. Y. Lee, K. H. Choi, S. H. Seo, and J. K. Shin, "Operation of a wide dynamic range CMOS image sensor based on dual sampling mechanism and its SPICE simulationJournal of Sensor Science and Technology", J. Sensor Sci. & Tech.,Vol. 19, No. 4, pp. 285-290, 2010. DOI ScienceOn |
26 | Y. W. Chang, Y. T. Tai, Y. T. Huang, and Y. S. Yang, "A phototransistorbased high-sensitivity biosensing system using 650-nm light", IEEE Journal of Sensors, Vol. 9, No. 6, pp. 673-677, 2009. DOI ScienceOn |
27 | J. Ota, T. Tokuda, K. Kagawa, M. Nunoshita, and S. Shiosaka, "Pulse modulation CMOS image sensor for biofluorescence imaging applications", IEEE Pocdeeing of Symposim Circuit and Systems, Vol. 4, pp. 3487-3490, 2005. |
28 | F. de S. Campos, N. Faramarzpour, M. J. Deen, "Photodetection with gate-controlled lateral BJTs from standard CMOS technolog", IEEE Sensors Journal, Vol. 13, No. 5, pp. 1554-1563, 2013. DOI ScienceOn |
![]() |