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http://dx.doi.org/10.5369/JSST.2014.23.4.284

Modeling of Gate/Body-Tied PMOSFET Photodetector with Built-in Transfer Gate  

Lee, Minho (School of Electronics Engineering, Kyungpook National University)
Jo, Sung-Hyun (School of Electronics Engineering, Kyungpook National University)
Bae, Myunghan (School of Electronics Engineering, Kyungpook National University)
Choi, Byoung-Soo (School of Electronics Engineering, Kyungpook National University)
Choi, Pyung (School of Electronics Engineering, Kyungpook National University)
Shin, Jang-Kyoo (School of Electronics Engineering, Kyungpook National University)
Publication Information
Journal of Sensor Science and Technology / v.23, no.4, 2014 , pp. 284-289 More about this Journal
Abstract
In this paper, modeling of a gate/body-tied (GBT) PMOSFET photodetector with built-in transfer gate is performed. It can control the photocurrent with a high-sensitivity. The GBT photodetector is a hybrid device consisted of a MOSFET, a lateral BJT, and a vertical BJT. This device allows for amplifying the photocurrent gain by $10^3$ due to the GBT structure. However, the operating parameters of this photodetector, including its photocurrent and transfer characteristics, were not known because modeling has not yet been performed. The sophisticated model of GBT photodetector using a process simulator is not compatible with circuit simulator. For this reason, we have performed SPICE modeling of the photodetector with reduced complexity using Cadence's Spectre program. The proposed modeling has been demonstrated by measuring fabricated chip by using 0.35 im 2-poly 4-metal standard CMOS technology.
Keywords
Gate/body-tied; Built-in transfer gate; Modeling; BJT; SPICE; CMOS;
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