The Electrical and Radiation Detection Properties of $Au/Cd_{1-x}Zn_x/Te(x=20%)/Au$ Structure

$Au/Cd_{1-x}Zn_x/Te(x=20%)/Au$ 구조의 전기적 특성 및 방사선 탐지 특성

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.