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Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers

  • Bimonthly
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)

Aim & Scope

The main purpose of Transactions on Electrical and Electronic Materials (Trans. Electr. Electron. Mater. : TEEM) is to provide an open forum to report and share significant new findings on electrical and electronic materials for the materials research communities. The topics covered by the journal include but not limited to new semiconductor materials and devices, electronic ceramics, electrical insulation materials, thin film devices/sensors, display/optical devices, superconducting magnetic materials and devices, nanomaterials and nanodevices, photovoltaic materials and devices, and disaster prevention materials. Transactions on Electrical and Electronic Materials enables professionals in research and industry to keep track of up-to-date developments in the above-mentioned fields and their importance for future developments and success.

https://www.editorialmanager.com/teem/ KSCI KCI SCOPUS

Volume 16 Issue 4

  1. Irannejad, M.;Alyalak, W.;Burzhuev, S.;Brzezinski, A.;Yavuz, M.;Cui, B. 169
    https://doi.org/10.4313/TEEM.2015.16.4.169 PDF KSCI KPUBS HTML
    Although, there are several research studies on the engineering of the graphene layers using different etching techniques, there is not any comprehensive study on the effects of using different etching masks in the reactive ion etching (RIE) method on the quality and uniformity of the etched graphene films. This study investigated the effects of using polystyrene and conventional photolithography resist as a etching mask on the engineering of the number of graphene layers, using RIE. The effects were studied using Raman spectroscopy. This analysis indicated that the photo-resist mask is better than the polystyrene mask because of its lower post processing effects on the graphene surface during the RIE process. A single layer graphene was achieved from a bi-layer graphene after 3 s of the RIE process using oxygen plasma, and the bi-layer graphene was successfully etched after 6 s of the RIE process. The bilayer etching time was significantly smaller than reported values for graphene flakes in previous research.
  2. Singh, Tejinder 173
    https://doi.org/10.4313/TEEM.2015.16.4.173 PDF KSCI KPUBS HTML
    In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.
  3. Bae, Seon-Gi;Shin, Hyea-Gyiung;Chung, Kwang-Hyun;Yoo, Ju-Hyun;Im, In-Ho 179
    https://doi.org/10.4313/TEEM.2015.16.4.179 PDF KSCI KPUBS HTML
    The particle sizes of 0.95(K0.5Na0.5)NbO3-0.05BaTiO3 powder were controlled by secondary milling time after calcination. The average particle sizes, Dmean, of 0.95(K0.5Na0.5)NbO3-0.05BaTiO3 powders were critically changed from 14.31 μm to 0.91 μm by secondary milling time. The dielectric and piezoelectric properties of 0.95(K0.5Na0.5)NbO3-0.05BaTiO3 ceramics depended on the particle sizes of powders after calcination and the secondary milling process. As secondary milling times after calcination were increased to more than 48 hr, the dielectric and piezoelectric properties of 0.95(K0.5Na0.5)NbO3-0.05BaTiO3 ceramics were deteriorated.
  4. Kim, Seong-Hyeon;Yang, Seung-Dong;Kim, Jin-Seop;Jeong, Jun-Kyo;Lee, Hi-Deok;Lee, Ga-Won 183
    https://doi.org/10.4313/TEEM.2015.16.4.183 PDF KSCI KPUBS HTML
    This research investigates the impact of charge spreading on the data retention of three-dimensional (3D) silicon-oxide-nitride-oxide-silicon (SONOS) flash memory where the charge trapping layer is shared along the cell string. In order to do so, this study conducts an electrical analysis of the planar SONOS test pattern where the silicon nitride charge storage layer is not isolated but extends beyond the gate electrode. Experimental results from the test pattern show larger retention loss in the devices with extended storage layers compared to isolated devices. This retention degradation is thought to be the result of an additional charge spreading through the extended silicon nitride layer along the width of the memory cell, which should be improved for the successful 3-D application of SONOS flash devices.
  5. An, Ho-Myoung;Kim, Jooyeon 187
    https://doi.org/10.4313/TEEM.2015.16.4.187 PDF KSCI KPUBS HTML
    A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×105 and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm2/V·s at a drain voltage of −1 V, respectively.
  6. Park, Jae-Jun;Shin, Seong-Sik;Lee, Jae-Young;Han, Se-Won;Kang, Dong-Pil 190
    https://doi.org/10.4313/TEEM.2015.16.4.190 PDF KSCI KPUBS HTML
    Insulation breakdown characteristics of an inverter surge resistant enameled wire were investigated in a twisted pair prepared with organic/inorganic hybrid nanocomposite. Organic polymer was polyesterimide-polyamideimide (EI/AI) and inorganic material was a nano-sized silica. The enamel thickness was 50 μm and the diameters of enameled copper wires were 0.75, 1.024, and 1.09 mm, respectively. There were many air gaps in a twisted pair. Therefore, when the voltage was applied to the twisted pair, enamel erosion took place in the air gap area because of partial discharge according to Paschen’s law. The insulation lifetime of the hybrid wire (HW) was 41,750 sec, which was 515.4 times more than the 81 sec of EI/AIW. In addition, the shape parameter of HW was 2.58, which was 3.4 times higher than 0.75 of EI/AIW.
  7. Lee, Dong-Jin;Lee, Sung-Gap;Noh, Hyun-Ji;Jo, Ye-Won 194
    https://doi.org/10.4313/TEEM.2015.16.4.194 PDF KSCI KPUBS HTML
    La9.33(Si5V1)O26 ceramics were fabricated by the mixed oxide method for solid oxide electrolytes. La9.33(Si5V1)O26 specimens showed the hexagonal, space group P63 or P63/m, and the unit cell volume increased when the sintering temperature increased. The specimen sintered at 1,400℃ showed the X-ray patterns of the homogeneous apatite single phase without the second phase, such as La2SiO5 and SiO2. The specimen sintered at 1,400℃ showed the maximum sintered density of 4.93 g/cm3. When the sintering temperature increased, the electrical conductivities increased, the activation energy decreased and the values were 7.83×10−4 S/cm, 1.61 eV at 600℃, respectively.
  8. Kim, Sung Yun;Shin, Seung Kwon;Kim, Hyungchul;Jung, Yeun-Ho;Kang, Hyunil;Choi, Won Seok;Kweon, Gi Back 198
    https://doi.org/10.4313/TEEM.2015.16.4.198 PDF KSCI KPUBS HTML
    The microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow a carbon nanowall (CNW) on a silicon (Si) substrate with hydrogen (H2) and methane (CH4) gases. To find the growth mechanism of CNW, we increased the growth time of CNW from 5 to 30 min. The vertical and surficial conditions of the grown CNWs according to growth time were characterized by field emission scanning electron microscopy (FE-SEM). Energy dispersive spectroscopy (EDS) measurements showed that the CNWs consisted solely of carbon.
  9. Kim, Tae-Seong;Kim, Jin-Wook;Kim, Sun-Jae;Kil, Gyung-Suk 201
    https://doi.org/10.4313/TEEM.2015.16.4.201 PDF KSCI KPUBS HTML
    This paper dealt with the condensing technology of an LED light source that uses a parabolic reflector to replace a searchlight equipped with a xenon lamp. A ray-tracing simulation was conducted to analyze the influence of the diameter of the reflector and the size of the light source on light condensing. The combination of a parabolic reflector with a diameter of 620 mm and a focal distance of 220 mm, and a 9 mm multi-chip package (MCP) with a luminous flux of 7,000 lm showed the narrowest beam angle. The luminous intensity at the center was measured at 7.7×106 cd. The distance between the light source and the point where the illuminance was 1 lx was calculated to be 2.8 km. The power consumption of the system was 95 W, which is only 9.5% of that of the 1 kW xenon searchlight, and the beam angle was 1.03°. In a site experiment, it was confirmed that the light ray reflected from the LED searchlight proceeds forward without any diffusion because of the narrow beam angle.
  10. Parida, Bhaskar;Choi, Jaeho;Palei, Srikanta;Kim, Keunjoo;Kwak, Seung Jong 206
    https://doi.org/10.4313/TEEM.2015.16.4.206 PDF KSCI KPUBS HTML
    We investigated the formation of a nanopyramidal structure and fabricated nanotextured Si solar cells using an Ag metal-assisted chemical etching process. The nanopyramidal structure was formed on a Si flat surface and the nanotexturing process was performed on the p-type microtextured Si surface. The nanostructural formation shows a transition from nanopits and nanopores to nanowires with etching time. The nanotextured surfaces also showed the photoluminescence spectra with an enhanced intensity in the wavelength range of 1,100~1,250 nm. The photoreflectance of the nanotextured Si solar cells was strongly reduced in the wavelength range of 337~596 nm. However, the quantum efficiency is decreased in the nanotextured samples due to the increased nanosurface recombination. The nanotexturing process provides a better p-n junction impedance of the nanotextured cells, resulting in an enhanced shunt resistance and fill factor which in turn renders the possibility of the increased conversion efficiency.
  11. Parida, Bhaskar;Choi, Jaeho;Palei, Srikanta;Kim, Keunjoo;Kwak, Seung Jong 212
    https://doi.org/10.4313/TEEM.2015.16.4.212 PDF KSCI KPUBS
    We investigated nanotextured Si solar cells using the silver-assisted chemical etching process. The nanotexturing process is very sensitive to the concentration of chemical etching solution. The high concentration process results in a nanowire formation for the nanosurfaces and causes severe surface damage to the top region of the micropyramids. These nanowires show excellent light absorption in photoreflectance spectra and radiative light emission in photoluminescence spectra. However, the low concentration process forms a nano-roughened surface and provides high minority carrier lifetimes. The nano-roughened surfaces of the samples show the improved electrical cell properties of quantum efficiency, conversion efficiency, and cell fill factor due to the reduction in the formation of the over-doped dead layer.
  12. Nahm, Choon-Woo 221
    https://doi.org/10.4313/TEEM.2015.16.4.221 PDF KSCI KPUBS
    The sintering effect on the microstructure, electrical properties, and dielectric characteristics of ZnO-V2O5-MnO2-Nb2O5-Dy2O3-based ceramics was investigated. With the increase of sintering temperature from 875 to 950℃, the density of the sintered pellets decreased from 5.57 to 5.45 g/cm3 and the average grain size increased from 4.3 to 10.9 μm. The breakdown field decreased noticeably from 6,095 to 996 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900℃ exhibited the best nonlinear properties: 39.2 in the nonlinear coefficient and 0.24 mA/cm2 in the leakage current density. The dielectric constant increased sharply from 658.6 to 2,928.8 with the increase of sintering temperature. On the whole, the dissipation factor exhibited a fluctuation with the increase of the sintering temperature, and a minimum value of 0.284 at 900℃.