A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

In this paper, the synthesis procedufe of impedance matching network is presented for broad-band microwave amplifier design, whereby amplifier operating in the octave bandwidth is designed and fabricated in detail. The transfer function of the matching netowrks is synthesized by chebyshev approximation and element values for the networks of specified topology are calculatd for various MILs and ripples. After the transistor is modeled by negative-image device model, the synthesis procedure for matching networks is applied to broad-band amplifier design which has electrical performance of about 12dB gain in 4 to 8GHz range. Experimental results obtained from the fabricated amplifier are shown to approach the electrical performance designed in the given frequency range. Construction of the impedance matching networks by transfer function synthesis is very useful method for the design of broad-band microwave amplifiers.

Development of an automobile antenna printed on-glass for FM radio receptions was discussed in this study. NEC-2 code was used as the design tool in this research. An omnidirectional radiation pattern and reception power level of the newly designed antenna were compared with those of the conventional pole antenna for the evaluation of its performance. The test sites for the reception power level measurement were chosen by their signal enbironmental condition, such as multipath fading, and strong field effect area.

Spatial green's functions for a horizontal magnetic dipole in a parallel-plate waveguide are expressed in an improved closed-form with two-level approximation of the spectral green's functions. The results evaluated by the present closed-from green's function with two-level approximation are compard with those obtained the previous closed-form green's function with one-level approximation. The present results are observed to be more acurate than the previous results over wide frequency range as well as whole spatial range. The combination of the present closed-form green's functions and the moment mehtod may help in analyzing the problem of EMP coupling through an aperture into a parallel-plat waveguide and the microstrip slot antenna with a reflector.

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.

This paper report sthe design, fabrication and characterization of an AlGaAs/GaAs HBT (heterojunction bipolar transistor) with an air-bridge isolation structure which is made to improve high frequency characteristics for the application to the mobile communication system in the next genration. We found that the size, shape and structure of HBT have an effect on the high frequency operation. The measured dc and ac characteristics of the four type HBTs were compared and analyzed. An E-type HBT with an air-bridge structure by undercut etching exhibited .beta.=56, $V_{off-set}$ = 0.3 V, B $V_{CEO}$=7.0V with $f_{T}$=40 GHz and $f_{max}$=45GHz at a collector current density of 7.1*10$^{4}$ A/c $m^{2}$.>.

Poly-Si TFT's could be fabricated on glass substrates by metal induced lateral crystallization (MILC) method at 450.deg. C. Channel area of the poly-Si TFT's was laterally crystallized from source and drain areas, where a thn nickel film was deposited. Dopants activation for the formation of source and drain region could be achieved by thermal annealing at 450.deg. C after the ion mass doping of phosphorus. The field effect mobility of thus formed N-channel poly-Si TFT's was 76cm$^{2}$/Vs, and the on/off current ratio was higher than 7E6.

In a plasma etching system, ions become an important parameter in determining the wafer topography which depends on both the physical sputtering mechanism and the chemically enhanced reaction. this paper reports the energy and angular distributions of ions across the plasma sheath using a monte carlo method. The ion distribution is mainly affected by the magnitude of the sheath voltage and by the collision in the sheath. Furthemore, the local potential distribution in a plamsa sheath has been determined by solving the poisson's equation. In th is work, ionic collisions were cosidered in terms of both charge exchange and momentum transfer. The three-dimensional distributions of ions were calculated with varying the input process conditions in the plasma reactor.

The absolute pressure sensor using SDB wafer has been fabricated. the structure of the sensor consists of two wheatstone bridges and a diaphragm. One of the two wheatstone bridges is located on the edge of diaphragm, and the other is located on the center of diaphragm. The diaphragm cavity is sealted in vacuum (~10$^{5}$ Torr) to reduce the effect of temperature due to the vapor in the cavity on the sensitivity of pressure sensor. This is the minor method of temperature compensation method. In this experiment the main compensation method is to use the difference of the two bridge offset voltages. The drift of offset voltage with temperature is reduced by using this method so that temperature charcteristics is improved. In this method the temperature effect in the range of 22~100.deg. C was compensated over 80%.

In this paper, we have proposed a new row signal modulation method in order to display multi-gray image using super-twisted nematic liquid crystal display (STN-LCD), which has no complex computation, high selection ratio, and low driving voltage. By the proposed method, we have implemented a 320*240, 8-gray video-rate STN-LCD. For achieving a video-rate STN-LCD, 6 lines are selected at a time. Each row line is selected 8 times by equally distributed pulses throughout one frame. As a result, we can get 8 gray, video-rate image. The repetive horizontal pattern and the filckering was analyzed and the improvements have been presented.

Material characterizations were performed for In$_{0.53}Ga_{0.47}As/In$_{0.52}Al_{0.48}$/As MQWs grown on InP substrates by low-temperature modlecular beam epitaxy. MQW samples were grwon at different temperatures of 200.deg.C, 300.deg. C and 500.deg. C, and doped with 10$^{18}$ cm$^{3}$ Be. High resolution x-ray diffraction measurement showed the change in crystal qualities according to growth temperature. Hall measurement showed the changes in carrier concentrations and mobilities for different growth temperatures. The optical properties of MQW samples were investigated with photoluminescence and fourier-transform infrared spectroscopy measurements.

Ultr shallow p$^{+}$-n junction with Co/Ti bilayer silicidde contact was formed by ion implantation of BF$_{2}$ [energy : (30, 50)keV, dose:($5{\times}10^{14}$, $5{\times}10^{15}$/$\textrm{cm}^2$] onto the n-well Si(100) region and by RTA-silicidation and post annealing of the evaporated Co(120.angs., 170.angs.)/Ti(40~50.angs.) double layer. The sheet resistance of the silicided p$^{+}$ region of the p$^{+}$-n junction formed by BF2 implantation with energy of 30keV and dose of $5{\times}10^{15}$/$\textrm{cm}^2$ and Co/Ti thickness of $120{\AA}$/(40~$50{\AA}$) was about $8{\Omega}$/${\box}$. The junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$ -n ultra shallow junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$-n ultra shallow junction with Co/Ti bilayer silicide contact did not show any agglomeration or variation of sheet resistance value after post annealing at $850^{\circ}C$ for 30 minutes. The boron concentration at the epitaxial CoSi$_{2}$/Si interface of the fabricated junction was about 6*10$6{\times}10^{19}$ / $\textrm{cm}^2$./TEX>.

The chirping characteristics of InGaAsP electroabsorption modulatiors have been analyzed. The effective .alpha. parameters for large signal modulation were estimated by comparing the pulse shape after fiber transmission with constant chirping assumption.We investigated the structure and the operating condition of the modulator to improve the chirping characteristics. The .alpha. parameters were calculated as the function of wavelength detuning and the bias voltage. To minimize the chirping performance, high bias voltage and a small wavelength detuning and the bias voltage. To minimize the chirping performance, high bias voltage and a small wavelength detuning were preferred. An negative .alpha. value is achieved at the wavelength detuning below 30meV with a proper bias voltage so that pulse compression effect was expected.