In this paper, the radiation characteristics of a bar-type tranceiver are analyzed by using FDTD method and the effectiveness of the analysis method is verified by comparing the calculated data with experimental data. The effects of human head and hand on the radiation characteristics of fold-type transceiver are analyzed. In order to observe the effects of human head and hand on the input impedance and far-field radiation pattern, a fold-type transceiver with .lambda./4 monopole antenna wrapped by human hand operating in the proximity of hea dis modeled an analyzed.

The nput impedance of a patch-tupe dipole antenna for GPR is calculated by using the moment methods in case that the surrounding medium is modeled on a multi-layer structure consisting of lossy dielectircs. When the cone-type function equivalent to pulse basis function in employed, one of the double integration can be performed analytically. The remaining integration is excuted numerically in a finite rnage and analytically in asymptotic region. The current distributions and input impedances of those antennas are calculated numerically.

We proposed a novel bondwire inductor buried in plastic package for low cost MMIC and characaterized the electrical perofmrance in a wide frequency range using the full-wave analysis of finite element method(FEM), and then we fabricated and measured the scale-up model in order to prove the characteristics. Th ebondwire inductor has higher quality factor and higher cutoff frequency than the conventional spiral inductor designed n the same area as the bondwire inductor. Since the air-bridge process is not requried for the bondwire inductor, it is very suitable for low cost plastic-packaged MMIC production. The bondwire inductor has the field distribution localized around the bondwire inductor and hence is more compatible to the crosstalk problems.

Modal transmission-line is utilized to analyze the power coupling of optical directional coupler composed by two parallel guiding slabs. By defining a coupling efficiency .eta. amenable to rigorous supermodes and boundary conditions of modal functions, we evaluate the power transfer for TE mode of gainy coupler. The results reveal that optimized power exchange occurs at a novel wavelength .lambda.$_{op}$ , which is generally different from minimum gap .lambda.$_{min}$ between rigorous modes and phase-matching condition .lambda.$_{ph}$ .

This paper presents the experimental results on the 3-electrode DC-PDP which has a common electrode to improve the PDP life cycle. The measured DC characteristic proves the effectiveness of common electrode absorbing about half of discharge currents. The waveforms for pulse memory operation of3-electrode PDP without crosstalk could also be determined from the I-V characteristics. The pulse memory drives of 8*8 cell array show the frequency response fo memory margin and the luminance efficiency of 3-electrode PDP are quite different from genrally known characteristics of 2-electrode DC-PDP.

This paper presents the physiological signal processing CMOS one chip for transmitting human bodys small electrical signals such as electrocardiogram(EKG) or electromyogram(EMG) and the external system for receiving signals was implemented by the commercial ICs. For simultaneous four-subject four-channel telemetry, a new enfored synchronization techniqeu using infrared bi-directional communication has been proposed. The telemeter IC with the size of 5.1*5.1mm$^{2}$ has the following functions: receiving of command signal, initialization of internal state of all functional blocks, decoding of subject-selection signal, time multiplexing of 4-channel modulated physiological signals, transmitting of telemetry signal to external system and auto power down control. The newly designed synchronized oscillator with low supply voltage dependence in the telemeter IC operates at a supply voltage from 4.6~6.0V and the nonlinearity error of PIM modulator was less than 1.2%F.S(full scale). The power saving block operates at the period of 2.5ms even if the telemetry IC does not receive command signal from external system for a constant time.

We propose a new static current source model and parameter extraction method for AlGaAs/GaAs HBT. The proposed model has 9 parameters describing internal currents and are experessed with the physically meaningful parameters.The proposed parameter extraction method uses the measured dC IV curves and does not need the gummel plt data and any optimization process. the constructed model based on the proposed method predicts the measured data well.

Polysilicon resistors with high thermal stability have been fabricated by a new mixed process using POCl$_{3}$ doping and arsenic implantation. Varous temeprature coefficients, which range form 510 ppm/.deg. C to -302 ppm/.deg. C, were shown from the fabricated polysilicon resistors with sheet resistance of 58~107 .ohm./sq in the operating temeprature of 27~150.deg. C. The temperature coefficient of the polysilicon resistor by the mixed technology was about 4.3 times as low compared to the conventional polysilicon resistor using POCl$_{3}$ doped single process with the same sheet resistance of 75.ohm./sq. In addition, the mixed technology can be applied to obtain nearly zero temperature coefficient for polysilicon resistors which are reliable and insensitive to temperature.

Generally, electronic packaging designer uses HSPICE SOFTWARE TOOL to validate electric characteristics of traces layout before layout traces in PCB in hundreds Mb/s high speed digital circuits. We are in need of a plated through hole (PTH) model and a connector model to use HSPICE SOFTWARE TOOL. Those models have not been perfectly defined for HSPICE simulation. In this paper, we define a PTH model and a connector model for HSPICE simulation and discuss application range for these models. Th emodels are analytic models very applicable for HSPICE simulation and are used to analyze electric characteristic of the PTH and the connector in thetraces layout in high speed digital circuit.

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

Nitrided oxides which have been investigated as alternative gate oxide for metal-oxide-semiconductor field effect devices were grown by two-step process using N$_{2}$O gas, and were chaacterized via a fowler-nordheim tunneling(FNT) electron injection technique. Electrical characteristics of nitrided gate oxides were superior to that of control oxides.Further, the FNT electron injection into the nitrided gate oxides reveals that gate oxides degrade more both if electrons were foreced to inject from the gate metal and if thicker nitrided gate oxides were used in the thickness range of 90~130.angs.. Models are suggested to explain these phenomena.

For the self-aligned AlGaAs/GaAs HBTs, the surface states at the interface between the extrinsic base surface and the passivation nitride is a major cause of degradation of dc characteristics. In this paper the degradation mechanisms of self-aligned AlGaAs/GaAs HBT were analyzed, and GaAs HBTs, which employed an InGaP ledge emitter structure formed by the nonself-aligned process to cover the surface of the extrinsic base and reduce the surface states, produced high reliability. Accoridng to the acceleration lifetime test, the nonself-aligned InGaP/GaAs HBTs produced very reliable dc characteristics comparing with the self-aligned AlGaAs/GaAs HBTs. The activation energy was 1.97eV and MTTF $4.8{\times}10^{8}$ hrs at $140^{\circ}C$ which satisfied the MIL standard.

To form 0.2 .mu.m p$^{+}$-n junctions, BF$_{2}$ ions with the energy of 20keV and the dose of 2*10$^{15}$ cm$^{-2}$ were implanted into the crystalline and preamorphized silicon substrates. Th epreamorphization was performed using 45keV, 3*10$^{14}$ cm$^{-2}$ As or Ge ions. Th efurnace annealing and rapid thermal annealing were empolyed to annihilate the implanted damage and to activate the implanted boron ions.The junction properties were analyzed with the measured values of the junction depth, sheet resistances, residual defects, and leakage currents. The thermal cycle of furnace annela followed by rapid thermal annela shows better characteristics than the annealing sequence of rapid thermal anneal and furnace annela.Among the premorphization species, Ge ion exhibited the better characteristics than the As ion.n.

A new 1*4 optical waveguide power divider is proposed and fabricated. It consists of a 1*4 multi-branch structure with a beam separator and two beam expanders that can control the splitting ratios between the output ports. The proposed optical waveguide power divider is designed by employing the two dimensional finite difference beam propagation method and is fabricated by a reactive ion etching method. The splitting ratio of fabricatd device is 25.0 : 25.7 : 25.3 : 24.0 for TE mode and 25.7 : 25.2 : 24.1 : 25.0 for TM mode. Comapred with the conventional Y-branch structure, the proposed structure shortens the length of a 1*N divider by the factor 3. Thus it reduces the total propagation loss and the total radiation loss at the branch points. furthermore, the splitting ratios between the output ports may be controlled in this structure for some special applications.

In this work was produced and analyzed a z-cut Ti:LiNbO$_{3}$ optical waveguide which applies for various optical devices.A waveguide channel with a thickness 8 .mu.m and a length 66,000.mu.m and a mach-zehnder interferometer type waveguide were fabricated at a diffusion temperature 1050.deg. C for 6-8hours in a wet $O_{2}$ environment. The resulting Ti:LiNbO$_{3}$ optical waveguide was measured to have a Ti-strip thickness of 950.angs. and low loss. Surfaces and cross-sections of a fabricated waveguide were analysed. The mode pattern anaysis revealed that the waveguide showed a single mode at a 1550nm wavelength. The effective dimension of the waveguide was calculated by measuring a gaussian profile; Wx=10.95.mu. and Wy=9.14.mu.m. a propagation loss, of 0.50dB/cm for a TM mode and 0.45dB/cm for a TE mode, was low enough to be accepatable for optical devices.