For the reduction of parasitic inductance and matching of bonding wire in the package of microwave devices, we propose multiple bonding wires buried in a dielectric material of FR-4 composite. This structure is analyzed using the method of moments (MoM) and compared with the common bondwires and ribbon interconnections. The FR-4 composite is modelled by the cole-cole model which can consider the loss and the variation of the permittivity in a frequency. At 20 GHz, the parasitic reactance is reduced by 90%, 80%, 60% compared to those of a single bonding wire in air, double bonding wires in air and ribbon interconnection in air, respectively. Also, the new bondwire shows very good matching of 60.ohm characteristic impedance and has 15dB, 10dB, 5dB improvement of the return loss and 2.5dB, 0.7dB, 0.2dB improvement of the insertion loss compared to the common interconnections. This technique can minimize the parasitic effect of bondwires in microwave device packaging.

This paper describes the design, the manufacture and the development of th eautomatic gain control unit which ajdusts the gain of IF processor in the high sensitive & multifunctional receiver unit (HMR) for pulse doppler radar system. Accodording to the effective distnce of target, radar cross section, and a lot of external environments (such as clutter), the receiving stage of RADAR system often deviates from dynamic range. To solve this kind o fproblem, continuous/pulse wave AGC are realized, make it possible to control the gain characteristics of receiver stably, and can increase dynamic range linearly by adjusting the gain slope of receiver which is limited by 1-dB gain compression point. In this study, AGC unit is designed to regulate the total gain of receiver by using te analog feedback theory. It also has rapid enough response to process pulse signal. This study presents the gain control method of IF, the real manufacture technique (the package-type components) and the measurement performance of AGC.

The dielectric effects on the parasitics of bondwires buried in slightly-lossy dielectric materials hav been investigated over a wide frequency range using the method of moments with incorporation of ohmic and dielectric losses. The FR-4 composite is widely used as a basis material for PCB and plastic packages, because of it sinherent electricl and chemical stbility and low cost. The cole-cole model, which is representative complex permittivity model of epoxy polymers, has been applied to consider the dielectric effects in the MoM calculation. The prasitic impedance of a grounded bondwire in FR-4 composite is greatly increased due to the dielectric loading effect enhanced by the radiation at high frequencies. These calculation results will be helpful for designing and packaging of high-frequency low-cost IC's.

Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and $Si_3N_4$ powders were used to synthesize $(Mg_xZn_{1-x})SiN_2$ host materials. $Tb_4O_7$ and $Eu_2O_3$ powdrs were added as luminescent centers. Very sharp emission spectra of $Tb^{3+}$ ions were observed from $Mg._5Zn._5SiN_2:Tb$ sampels sintered at $1400^{\circ}C$ for an hour and the maximum intensity of emission spectra occured at wavelength of 550nm (green light). Synthetic conditions of $(Mg_xZn_{1-x})SiN_2:Eu$ phosphors were optimized for the hghest luminescence. The Eu concentrations were varied from 0.2% to 1.6%. Before firing, the powders were mixed using ballmills, methanol, acetone, or D.I. water. The Mg/Zn ratio also were varied from x=0.3 to x=0.7. The maximum PL intensity was obtained from a sample with 1.2% Eu concentration and the powder was mixed with methanol and dried before firing. The maximum intensity of the emission spectra occurred t the wavelength of 470nm(blue light). TFEL devices fabricated by using sputter deposition of $(Mg._3Zn._7)SiN_2:Eu$ phosphor layer showed yellowish white emission at the phosphor field of 2MV/cm.

본 논문에서는 반도체 소자 제조 공정 중, 염산화 공정 시에 발생하는 스트레스에 따른 산화막의 3차원적 거동을 시뮬레이션하였다. 이를 위해, 이동하는 3차원 경계면에서의 노드 생성 및 제거 기능을 지는 3차원 적응 메쉬 생성기를 개발하였고, 지배 방정식을 유한요소법(finite element method)으로 이산화시켜 수치 해석적으로 해를 구하는, 스트레스 효과를 고려한 3차원 산화 시뮬레이터를 개발하였다. 본 연구에서는 열산화 공정에 의한 산화막의 3차원적 거동을 관찰하기 위하여, 섬구조(island) 및 공구조(hole structure)의 산화막 성장을 <100> 실리콘 기판에 대하여 $1000^{\circ}C$, 60분간 습식 산화 조건에서 시뮬레이션하였다. 초기 산화막의 두께는 $300\AA$, 질화막의 두께는 $2,000\AA$으로 가정하였다. 마스크의 형태에 따라 코너에서의 새부리(bird's beak)형태가 변하는데, 코너에서의 효과는 마스크 형태에 따라 산화제의 확산이 다른 영역에 비해 감소하거나 증가하는 영향이 주된 이유이지만, 스트레스에 의해 그 영향이 더 커짐을 확인하였다. 섬구조에서는 compressive 스트레스에 의해 코너 부근에서 산화가 감소하는 결과를 가져오고, 공구조에서는 tensile 스트레스로 인해 산화가 더 증가하는 결과를 보임을 확인하였다.