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Microwave Dielectric Properties of (1-X)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) Ceramics with Sintering Temperature  

김재식 (광운대학 전자재료공학과)
최의선 (광운대학 전자재료공학과)
이문기 (광운대학 전자재료공학과)
이영희 (광운대학 전자재료공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.53, no.2, 2004 , pp. 67-72 More about this Journal
Abstract
The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$∼$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=＋450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.
Keywords
$Q\times\textrm{f}$; $Mg_4Ta_2O_{9}$; $TiO_2$; sintering temperature;
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Times Cited By KSCI : 3  (Citation Analysis)
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