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A study on Silicon dry Etching for Solar Cell Fabrication Using Hollow Cathode Plasma System  

Suresh Kumar Dhungel (성균관대학 정보통신공학부)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.53, no.2, 2004 , pp. 62-66 More about this Journal
Abstract
This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.
Keywords
Hollow Cathode Plasma(HCP); Multicrystalline; Ion bombardment; Texturing;
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1 K. C. Smyth, B. L. Bentz, C. G. Bruhn, and W. W. Harrison, 'The role of Penning ionization of the minor species in a neon hollow cathode discharge', J. Am. Chem. Soc. 101, 797(1979)   DOI
2 B. Chapman, Glow Discharge Process; Wili: New York 1980
3 K. C. Smyth and R. A. Keller and F. F. Crim, 'Photon-induced ionization change in a neon discharge', Chem. Phys. Lett. 55, 473(1978)   DOI   ScienceOn
4 M. Elwenspoek and H. V. Jansen, 'silicon micromachining', university of cambridge, pp. 285, 1998
5 M. Elwenspoek, H. V. Jansen 'Silicon micromachining', Cambridge university press, pp. 304-305, 1998
6 R. J. Buss, D. S. Ruby, G. A. Hebner and P. Yang 'Modeling a Dry Etch Process for Large-Area Devices' Workshop on Crystalline-Silicon Solar Cell Materials and Process, Breckenridge, CO, 9-11 August 1999
7 Ralf Ludemann;Sebastian Schaefer and Corina Schule;Christoper Hebling, 'Dry Processing of mc-Silicon Thin-Film Solar Cells on Foreign Substrates leading to 11% Efficiency', 26th PVSC, pp. 159-162, 1997   DOI
8 M. Sugawara, 'Plasma etching fundaments and applications', Oxford University Press Inc., New York, pp. 1-2, 1998
9 Oehrlein, G. S., J. F. Rembetzki, and E. H. Payne, J. Vac. Sci. Technol., B8: 1199 (1990)
10 Mogab, C. J., A. C. Adams, and D. L. Flamm, J. Appl. Phys., 49: 3796 (1978)   DOI   ScienceOn
11 E. F. Zalewski, R. A. Keller, and R. Engleman, 'Laser induced impedance change in a neon hollow cathode discharge A mechanistic study',Jr, J. Chem. Phys. 70, 1015(1979)   DOI
12 G. J. Beenen, B. P. Lessard, and E. H. Plepmeir, 'Laser-induced impedance change in pulsed hollow cathode lamps', Anal. Chem. 11, 1721(1979)