Effects of Deposition Conditions on Properties of CuNi thin Films Fabricated by Co-Sputtering of Dual Targets

이중 타겟의 동시 스퍼터링을 이용한 CuNi 박막 제작시 증착변수가 박막의 물성에 미치는 영향

  • 서수형 (한양대 전자재료 및 부품 연구센터) ;
  • 이재엽 (한양대 전자재료 및 부품 연구센터) ;
  • 박창균 (한양대 전기공학과 대학원) ;
  • 박진석 (한양대 전기공학과)
  • Published : 2001.01.01

Abstract

CuNi alloy films are deposited by co-sputtering of dual targets (Cu and Ni, respectively). Effects of the co-sputtering conditions, such as powers applied to the targets, deposition pressures, and substrate temperatures, on the structural and electrical properties of deposited films are systematically investigated. The composition ratio of Ni/Cu is almost linearly decreased by increasing the DC power applied to the Cu target from 25.6 W to 69.7 W with the RF power applied to the Ni target unchanged(140 W). it is noted that the chamber pressure during deposition and the film thickness give rise to a change of the Ni/Cu ratio within the films deposited. The former may be due to a higher sputtering yield of Cu atom and the latter due to the re-sputtering phenomenon of Cu atoms on the surface of deposited film. The film deposited at higher pressures or at lower substrate temperatures have a smaller crystallite size, a higher electrical resistivity, and much more voids. This may be attributed to a lower surface mobility of sputtered atoms over the substrate.

Keywords

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