• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1338-1342
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.535-536
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• 2010

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2206-2214
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• 2011

LDC(Line Drop Compensation) is widely used in controlling ULTC(Under Load Tap Changer) output voltage at distribution substation. However, LDC may experience some difficulties in voltage control due to renewable energy resources and distributed generations. Therefore, more advanced voltage control algorithm is necessary to deal with these problems. In this paper, a modified voltage control algorithm for ULTC and DG is suggested. ULTC is operated with the voltages measured at various points in distribution system and prevents overvoltage and undervoltage in the distribution feeders. Reactive power controller in DG compensates the voltage drop in each distribution feeders. By these algorithms, the voltage unbalance between feeders and voltage limit violation will be reduced and the voltage profile in each feeder will become more flat.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.11
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• pp.456-463
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• 1984

The fast-rising high-voltage pulse generation circuit system of a theta pinch is both theoretically and experimentally investigated. The idealized model of this circuit system is a hybrid circuit system composed of three parts: a lumped circuit part being consisted of a capacitor bank and a spark switch connected in series, another lumped circuit part being consisted of the Blumlein transmission line, whose end load is the pinch coil. the voltage difference between two ends of the pinch coil is formulated by analyzing this hybrid circuit system by means of the law of the signal propagation in the transmission line and Kirchhoff's laws. The expedient numerical method for computer calculation is developed to generate the pulse profile of the voltage difference across the pinch coil. The period of the experimentally measured main pulse is a fourth of the theoretical one neglecting the resistance of the pinch coil. We attribute this discrepancy to the modelling in the theoretical calculation that hte resistance and inductance of the spark switch and capacitor bank are assumed to be constant through discharge. Therefore, we can see that the rise time of the imploding magnetic-field pulse is mainly dependent on the spark switch and capacitor bank.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.1
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• pp.22-27
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• 1985

본 논문에서는 채널에 붕소를 이온주입하여 불균일한 도우핑 profile을 가지는 n-채럴 MOSFET의 threshold 전압에 대하여 보다 간단한 모델링을 기술하였다. 실제의 도우핑 Profile들 지수적인 Profile을 지수적인 profile로 근이시키고 Poisson방정식과 depletion approximation을 이용하여 실리콘 표면의 Potential, 최대 공핍층의 폭 그리고 threshold 전압을 구하였다. 계산한 threshold 전압이 실험치와 잘 일치한다는 사실은 이온 주입한 MOS소자들에 대하여 지수적인 도우핑 Profile로 근이시킬 수 있다는 타당성을 보여 주고 있다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.10
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• pp.1712-1717
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• 2010

To analyze the load of distribution line, real LPs (Load Profile) of AMR (Automatic Meter Reading) customers and VLPs (Virtual Load Profile) of non-AMR customers are required. Accuracy of VLP is an important factor to improve the analysis performance. There are 2 kinds of methods to generate the VLP; one is using ALP (Average Load Profile) per each industrial code and PNN (Probability neural networks) algorithm; the other is using LSI (Load Shape Index) and C5.0 algorithm. In this paper, existing researches are studied, and new method is suggested. Each methods are compared the performance with same LP data of real high voltage customers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.10
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• pp.62-66
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• 2011

In this study, a new RF method to extract the drain-source voltage Vds-dependent gate-bulk capacitance of deep-submicron MOSFETs is developed by determining Vds-independent gate-source overlap capacitance using measured S-parameters. The accuracy of extraction method is verified by observing good agreements between the measured and modeled S-parameters. The lateral channel doping profile in the drain region is experimentally measured using a Vds-dependent curve of the overlap and depletion length obtained from the extracted data.

• Journal of Electrical Engineering and Technology
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• v.11 no.6
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• pp.1582-1589
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• 2016

In this paper the integration of Distributed Generation (DG) in radial distribution system is investigated by computing the optimal site and size of DG to be placed. An analytical expression based on equivalent current injection has been derived by utilizing topological structure of radial distribution system to find optimal size of DG to minimize losses. In the presented formulation, the optimal DG placement is obtained without repeatedly computing the load flow. The proposed formulation can be used to find the optimal size of all types of DGs namely Type-I, Type-II, Type-III and Type-IV DGs. The investigations are carried out on IEEE 33-bus and 69-bus radial distribution systems. The optimal DG placement results into reduction in active and reactive power losses and improvement in voltage profile of the buses.