1 |
C. H. Lee, S. Han, “A low phase noise X-band MMIC GaAs MESFET VCO,” IEEE Microwave and Guided Wave Lett. Vol.10, No.8, pp.325-327, Aug., 2000.
DOI
ScienceOn
|
2 |
T. L. Nguyen, A. P. Freundorfer, “A balanced distributed preamplifier using MMIC GaAs MESFET technology,” IEEE Photonics Tech. Lett. Vol.9, No.4, pp.499-501, Apr., 1997.
DOI
ScienceOn
|
3 |
J. M. Zamanillo, J. Portilla, C. Navarro, C. Perez-Vega., “Optical Ports: Next generation of MMIC control devices,” Proceedings of 35th European Microwave Conference (EuMC), pp.1391-1394, Oct., 2005.
|
4 |
A. P. Freundorfer, D. H. Choi, “Adaptive transversal preamplifier for high speed lightwave systems,” IEEE Microwave and Wireless Components Lett. Vol.11, No.7, pp.293-295, July, 2001.
DOI
ScienceOn
|
5 |
J. Rodriguez-Tellez, K. A. Mezheg, N T. AIi, T. Fernandei, A. Mediavilla, A. Tazon, C. Navarro, “Optically controlled 2.4GHz MMIC Amplifier,” Proceedings of 10th International Conference on Electronics, Circuits & Systems (ICECS), pp.970-973, Dec., 2003.
|
6 |
M. A. Alsunaidi, “Optoelectronic conversion of short pulses in sub micrometer GaAs active devices,” Opt. Quant. Electronics Vol.40, No.9, pp.685-694, July, 2008.
DOI
|
7 |
S. Sabat, L.D.S. Coelho, A. Abraham, “MESFET DC model parameter extraction using quantum particle swarm optimization,” Microelectronics Reliability Vol.49, No. pp.660-666, Apr., 2009.
DOI
ScienceOn
|
8 |
I. J.Bahl, “2.8 GHz 8-W Power Amplifier MMIC Developed Using MSAG MESFET Technology,” IEEE Microwave and Wireless Components Lett. Vol.18, No.1, pp.52-54, Jan., 2008.
DOI
ScienceOn
|
9 |
B. Y. Martynov, E. V. Pogorelova, “Influence of Substrate Purity on MESFET Parameters,” Proceedings of 17th International Crimean Conference on Microwave & Telecommunication Technology, pp.121-122, Sep., 2007.
|
10 |
I. J. Bahl, D. Conway, “L and S-Band Compact Octave Bandwidth 4-bit MMIC Phase Shifters,” IEEE Trans. Microwave Theory Tech. Vol.56, No.2 , pp.293-299, Feb., 2008.
DOI
ScienceOn
|
11 |
S. Kabra, H. Kaur, S. Haldar, M. Gupta, R.S. Gupta, “Two-dimensional subthreshold analysis of submicron GaN MESFET,” Microelectronics Journal Vol.38, No.4 pp.547-555, Apr., 2007.
DOI
ScienceOn
|
12 |
S. A Bashar “Study of Indium Tin Oxide(ITO) for Novel Optoelectronic Devices,” PhD Thesis, King’s College of London, University of London, 1998.
|
13 |
S.M. Sze, Physics of semiconductor devices,second ed., Wiley, New York, 1981.
|
14 |
A. Dasgupta, S. K. Lahiri, “A two-dimensional analytical model of threshold voltages of shortchannel MOSFETs with Gaussian-doped channels,” IEEE Trans. Electron Device Vol.35, No.3, pp.390-392, Mar., 1988.
DOI
ScienceOn
|
15 |
S. Jit, G. Bandhawakar, B. B. Pal, “Analytical Modeling of a DCFL Inverter Using Normally-off GaAs MESFETs Under Dark and Illuminated Conditions,” Solid-State Electronics Vol.49, No.4, pp.628-633, Feb., 2005.
DOI
ScienceOn
|
16 |
Michael Shur, GaAs devices and circuits, Plenum Press, New York, 1986.
|
17 |
K.N. Ratnakumar, J.D. Meindel, “Short channel MOST threshold voltage model,” IEEE J. Solid State Circuits Vol.17, No.5, pp.937-947, Oct., 1982.
DOI
|
18 |
E. Kreyszig, Advanced Engineering Mathematics, seventh ed., Wiley, New York, 1993.
|
19 |
S. P. Chin, C. Y. Wu, “A new two dimensional model for the potential distribution of short gate length MESFETs and its application,” IEEE Trans. Electron Device Vol.39, No.8, pp.1928-1937 Aug., 1992.
DOI
ScienceOn
|
20 |
I. D. Parker, “Carrier tunneling and device characteristics in polymer light-emitting diodes,” J. Appl. Phys. Vol.75, No.3, pp.1656-1666, Feb., 1994.
DOI
ScienceOn
|
21 |
J. Szczyrbowski, “A. Dietrich and H. Hoffmann, Optical and Electrical Properties of r.f. Sputtered Indium-Tin Oxide Films,” Phys Stat Sol (a), Vol.78, No.1, pp.243-252, July, 1983.
DOI
ScienceOn
|
22 |
S. Mishra, V. K. Singh, B. B. Pal, “Effect of radiation and surface recombination on the characteristics of an ion -implanted GaAs MESFET,” IEEE Trans. Electron Device Vol.37, No.1, pp.2-10, Jan., 1990.
DOI
ScienceOn
|
23 |
S. Bose, Adarsh, Ritesh Gupta, Mridula Gupta and R S Gupta “Model for optically biased Short channel GaAs MESFET,” Microwave Opt. Technol. Lett. Vol.32, No.2, pp.138-142, Jan., 2002.
DOI
ScienceOn
|
24 |
S. Bose, M. Gupta, R.S. Gupta, “ characterristics of optically biased short channel GaAs MESFET,” Microelectron J Vol.32, No.3, pp.241-247, Mar., 2001.
DOI
ScienceOn
|
25 |
P. Calvani, A. Corsaro, “Microwave operation of sub-micrometer gate surface channel MESFETs in polycrystalline diamond,” Microwave Opt. Technol. Lett. Vol.51, No.11, pp.2786-2788, Nov., 2009.
DOI
ScienceOn
|
26 |
C. H. Liu, L. W. Wu, S. J. Chang, J. F. Chen, U. H. Liaw, S. C. Chen, “Ion-implantation technology for improved GaAs MESFETs performance,” J. of Mater. Sci.:Mater in Electronics Vol.15, No.2, pp.91-93, Feb., 2004.
DOI
ScienceOn
|
27 |
E. Donkor, F. C. Jain, “An Analytical Two-Dimensional Perturbation Method to Model Submicron GaAs MESFETs,” IEEE Trans. Microwave Theory Tech. Vol.37, No.9, pp.1484-1487, Sep., 1989.
DOI
ScienceOn
|
28 |
N. Kato, K. Yamasaki, K. Asai, K. Ohwada, “Electron beam lithography in n+ self-aligned GaAs MESFET fabrication,” IEEE Trans. Electron Device Vol.30, No.6 , pp.663-668, June, 1983.
DOI
ScienceOn
|
29 |
P. C. Chao, P. M. Smith, S. Wanuga, W. H. Perkins, E. D. Wolf, “Channel length effects in quarter micrometer gate-length GaAs MESFETs,” IEEE Electron Device Lett. Vol.4, No.9, pp.326-328, Sep., 1983.
DOI
ScienceOn
|
30 |
A. Dasgupta, S. K. Lahiri, “A novel analytical threshold voltage model of MOSFETs with implanted channels,” Int. J. Electronics Vol.61, No.5, pp.655-669, May, 1986.
DOI
ScienceOn
|
31 |
ATLAS: Silvaco International 2008.
|
32 |
J. M. Zamanillo, J. Portilla, C. Navarro, C. Perez-Vega, “Optoelectronic control of a MMIC VCO at Ku band,” Proceedings of the 5th WSEAS International Conference on Electronics, Hardware, Wireless and Optical Communications, pp.138-141, Feb. 2007.
|
33 |
S. Jit, B. B. Pal, “A new Optoelectronic Integrated Device for Light-Amplifying Optical Switch (LAOS),” IEEE Trans. Electron Device Vol.48, No.12, pp.2732-2739, Dec., 2001.
DOI
ScienceOn
|
34 |
S. Kawasaki, H. Shiomi, “A novel FET model including an illumination intensity parameter for simulation of optically controlled millimeter-wave oscillators,” IEEE Trans. Microwave Theory Tech. Vol.46, No.6, pp.820-828, June, 1998.
DOI
ScienceOn
|
35 |
Madjar, A. Paolella, P. R. Herczfeld, “Analytical model for optically generated currents in GaAs MESFETs,” IEEE Trans. Microwave Theory Tech. Vol.40, No.8, pp.1681-1691, Aug., 1992.
DOI
ScienceOn
|
36 |
I. W.Smith, R. C. Sharp, “Demonstration of photonically controlled GaAs digital/MMIC for RF optical links,” IEEE Trans. Microwave Theory Tech, Vol.45, No.1, pp.15-22, Jan., 1997.
DOI
ScienceOn
|
37 |
S. Bose, M. Gupta, R.S. Gupta, “Cut-off frequency and optimum noise figure of GaAs optically controlled FET,” Microwave Opt. Technol. Lett. Vol.26, No.5, pp.279-282, Sep., 2000.
DOI
ScienceOn
|
38 |
S. Bose, Adarsh, R.S. Gupta, “Unilateral power gain of optically biased GaAs MESFET,” Appl Microwave Wireless , Vol.13, No.8, pp.68-77, Aug., 2001.
|
39 |
P. Chakrabarti, A. Gupta, N. A. Khan, “An Analytical Model of GaAs OPFET,” Solid-State Electronics Vol.39, No.10, pp.1481-1490, Oct., 1996.
DOI
ScienceOn
|
40 |
A. A. De Salles, Optical control of GaAs MESFETs, IEEE Trans. Microwave Theory Tech. Vol.31, No.10, pp.812-820, Oct., 1983.
DOI
ScienceOn
|
41 |
V. Eveloy, H. Yu-Chul, “The Effect of Electrostatic Discharge on Electrical Overstress Susceptibility in a Gallium Arsenide MESFET-Based Device,” IEEE Trans. on Dev. and Mater. Reliability Vol.7, No.1, pp.200-208, Mar., 2007.
DOI
ScienceOn
|
42 |
J. A Torres, J. C. Freire, “Monolithic transistor SPST switch for L-band,” IEEE Trans. Microwave Theory Tech. Vol.50, No.1, pp.51-56, Jan., 2002.
DOI
ScienceOn
|
43 |
F. Ellinger, R. Vogt, “Ultra compact, low loss, varactor tuned phase shifter MMIC at C-band,” IEEE Microwave and Wireless Components Lett. Vol.11, No.3, pp.104-105, Mar., 2001.
DOI
ScienceOn
|