Browse > Article
http://dx.doi.org/10.6109/jkiice.2011.15.6.1338

Analysis of Channel Doping Profile Dependent Threshold Voltage Characteristics for Double Gate MOSFET  

Jung, Hak-Kee (군산대학교)
Han, Ji-Hyung (군산대학교)
Lee, Jae-Hyung (군산대학교)
Jeong, Dong-Soo (군산대학교)
Lee, Jong-In (군산대학교)
Kwon, Oh-Shin (군산대학교)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.15, no.6, 2011 , pp. 1338-1342 More about this Journal
Abstract
In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.
Keywords
DGMOSFET; Doping Distribution; Gaussian Distribution; Poisson Equation; Threshold Voltage; Short Channel Effect;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 P. Mishra, A.N.Bhoj and N.K.Jha, "Die-level leakage Power Analysis of FinFET Circuits Considering Process Variations," 11th international symposium on quality electronic design, pp.347-355, 2010.
2 P.K. Tiwari, S. Kumar, S. Mittal, V. Srivastava, U. Pandey and S. Jit, "A 2D Analytical Model of the Channel Potential and Threshold Voltage of Double-Gate(DG) MOSFETs with Vertical Gaussian Doping Profile," IMPACT-2009, pp.52-55, 2009.
3 G. Zhang, Z. Shao and K. Zhou, "Threshold voltage model for short channel FD-SOI MOSFETs with vertical Gaussian profile," IEEE Tran. Electron Devices, vol. 55, pp.803-809, 2008.   DOI   ScienceOn
4 H.K.Jung, "Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function,"한국해양정보통신학회 영문지, vol. 9, no.3, 2011.
5 S.Namana, S.Baishya and K.Koley," A Subthreshold Surface Potential Modeling of Drain/Source Edge Effect on Double Gate MOS Transistor," 2010 International Conference on Electronics and Information Engineering, vol. 1, pp.87-91 , 2010.