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Lateral Channel Doping Profile Measurements Using Extraction Data of Drain Voltage-Dependent Gate-Bulk MOSFET Capacitance  

Choi, Min-Kwon (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Kim, Ju-Young (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Lee, Seong-Hearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.48, no.10, 2011 , pp. 62-66 More about this Journal
Abstract
In this study, a new RF method to extract the drain-source voltage Vds-dependent gate-bulk capacitance of deep-submicron MOSFETs is developed by determining Vds-independent gate-source overlap capacitance using measured S-parameters. The accuracy of extraction method is verified by observing good agreements between the measured and modeled S-parameters. The lateral channel doping profile in the drain region is experimentally measured using a Vds-dependent curve of the overlap and depletion length obtained from the extracted data.
Keywords
MOSFET; capacitance extraction; gate-bulk capacitance; overlap and depletion length; lateral channel doping profile;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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