• Journal of Electrical Engineering and Technology
• /
• v.9 no.2
• /
• pp.655-661
• /
• 2014

In this paper, a new two dimensional (2D) analytical modeling and simulation for a surrounding gate tunnel field effect transistor (TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunneling generation rate and thus we numerically extract the tunneling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.479-480
• /
• 2006

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.21 no.4
• /
• pp.789-794
• /
• 2017

Subthreshold current model is presented using analytical potential distribution of junctionless cylindrical surrounding-gate (CSG) MOSFET and threshold voltage shift is analyzed by this model. Junctionless CSG MOSFET is significantly outstanding for controllability of gate to carrier flow due to channel surrounded by gate. Poisson's equation is solved using parabolic potential distribution, and subthreshold current model is suggested by center potential distribution derived. Threshold voltage is defined as gate voltage corresponding to subthreshold current of $0.1{\mu}A$, and compared with result of two dimensional simulation. Since results between this model and 2D simulation are good agreement, threshold voltage shift is investigated for channel dimension and doping concentration of junctionless CSG MOSFET. As a result, threshold voltage shift increases for large channel radius and oxide thickness. It is resultingly shown that threshold voltage increases for the large difference of doping concentrations between source/drain and channel.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.4
• /
• pp.361-366
• /
• 2013

A full-range analytic drain current model for depletion-mode long-channel surrounding-gate nanowire field-effect transistor (SGNWFET) is proposed. The model is derived from the solution of the 1-D cylindrical Poisson equation which includes dopant and mobile charges, by using the Pao-Sah gradual channel approximation and the full-depletion approximation. The proposed model captures the phenomenon of the bulk conduction mechanism in all regions of device operation (subthreshold, linear, and saturation regions). It has been shown that the continuous model is in complete agreement with the numerical simulations.

• Journal of Electrical Engineering and Technology
• /
• v.9 no.4
• /
• pp.1355-1359
• /
• 2014

In the proposed work a 2D analytical modeling of single halo Triple material Surrounding Gate (SH-TMSG) MOSFET is developed. The Surface potential and Electric Field has been derived using parabolic approximation method and the simulation results are analyzed. The essential substantive is provided which elicits the deterioration of short channel effects and the results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated.

• Journal of Electrical Engineering and Technology
• /
• v.3 no.4
• /
• pp.566-570
• /
• 2008

Vertical nanowire SGFETs(Surrounding Gate Field Effect Transistors) provide full gate control over the channel to eliminate short channel effects. This paper presents design and characterization of a differential pair amplifier using NMOS and PMOS SGFETs with a 10nm channel length and a 2nm channel radius. The amplifier dissipates $5{\mu}W$ power and provides 5THz bandwidth with a voltage gain of 16, a linear output voltage swing of 0.5V, and a distortion better than 3% from a 1.8V power supply and a 20aF capacitive load. The 2nd and 3rd order harmonic distortions of the amplifier are -40dBm and -52dBm, respectively, and the 3rd order intermodulation is -24dBm for a two-tone input signal with 10mV amplitude and 10GHz frequency spacing. All these parameters indicate that vertical nanowire surrounding gate transistors are promising candidates for the next generation high speed analog and VLSI technologies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.5
• /
• pp.278-282
• /
• 2018

We propose a SPICE model of drain-induced barrier lowering (DIBL) for a junctionless cylindrical surrounding gate (JLCSG) MOSFETs. To this end, the potential distribution in the channel is obtained via the Poisson equation, and the threshold voltage model is presented for the JLCSG MOSFET. In a JLCSG nano-structured MOSFET, a channel radius affects the carrier transfer as well as the channel length and oxide thickness; therefore, DIBL should be expressed as a function of channel length, channel radius, and oxide thickness. Consequently, it can be seen that DIBLs are proportional to the power of -3 for the channel length, 2 for the channel radius, 1 for the thickness of the oxide film, and the constant of proportionality is 18.5 when the SPICE parameter, the static feedback coefficient ${\eta}$, is between 0.2 and 1.0. In particular, as the channel radius and the oxide film thickness increase, the value of ${\eta}$ remains nearly constant.

• Journal of IKEEE
• /
• v.23 no.1
• /
• pp.29-34
• /
• 2019

We investigated on-off voltage ${\Delta}V_{on-off}$ of sub-10 nm JLCSG (Junctionless Cylindrical Surrounding Gate) MOSFET. The gate voltage was defined as ON voltage for the subthreshold current of $10^{-7}A$ and OFF voltage for the subthreshold current of $10^{-12}A$, and the difference between ON and OFF voltage was obtained. Since the tunneling current was not negligible at 10 nm or less, we observe the change of ${\Delta}V_{on-off}$ depending on the presence or absence of the tunneling current. For this purpose, the potential distribution in the channel was calculated using the Poisson equation and the tunneling current was calculated using the WKB approximation. As a result, it was found that ${\Delta}V_{on-off}$ was increased due to the tunneling current in JLCSG MOSFETs below 10 nm. Especially, it increased rapidly with channel lengths less than 8 nm and increased with increasing channel radius and oxide thickness.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.236.2-236.2
• /
• 2010

The tidal current power is the power plant by installing the turbine or rotor where the tidal speed is fast. This system converting the horizontal movement to rotating energy. Tidal power turbine is needed for the dam to utilize the pressure difference. However, tidal current power using the only flow. The tidal current power was evaluated as the impact on the marine environment surrounding was less and the development of eco-friendly way. In this article, we calculated the effect of tidal current turbine on the tidal power generating by mean of CFD. With these calculated results, we checked the possibility of tidal current power using tidal power plant the discharge gate.

• Journal of Korean Medical classics
• /
• v.30 no.2
• /
• pp.83-98
• /
• 2017

Objectives : The paper's objective is to study into the books dealing in the debate surrounding the existence, or nonexistence, of urinary bladder's upper gate and lower gate, a debate that ensured since the publication of Huangdineijing. Methods : Sikuquanshu and Zhongyishijia databases were searched to collect related materials, and these materials were reviewed to get an understanding of the historical development of the debate. Results : The upper gates of urinary bladder was first mentioned in Nanjing. Since then, Wanglu's Yijingsuhuiji asserted that the upper gate exists while the lower didn't, but many argued after the dawning of Ming Dynasty that the upper doesn't exist while the lower does. Additionally, some urged in relation to the assertion of the nonexistence of upper gate that water liquid pervades into the urinary bladder through sebaceous membrane or oil net. Conclusions : Behind the debate between the existence or nonexistence of the upper and lower gates in urinary bladder is the theory of qi transformation. Even the anatomical knowledge of urinary bladder was submitted as an evidence. In general, the debate developed depending on how the differences between Huangdineijing's osmotic opinion and Nanjing's existence of the upper gate were perceived.