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http://dx.doi.org/10.6109/jkiice.2017.21.4.789

Subthreshold Current Model for Threshold Voltage Shift Analysis in Junctionless Cylindrical Surrounding Gate(CSG) MOSFET  

Jung, Hakkee (Department of Electronic Engineering, Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.21, no.4, 2017 , pp. 789-794 More about this Journal
Abstract
Subthreshold current model is presented using analytical potential distribution of junctionless cylindrical surrounding-gate (CSG) MOSFET and threshold voltage shift is analyzed by this model. Junctionless CSG MOSFET is significantly outstanding for controllability of gate to carrier flow due to channel surrounded by gate. Poisson's equation is solved using parabolic potential distribution, and subthreshold current model is suggested by center potential distribution derived. Threshold voltage is defined as gate voltage corresponding to subthreshold current of $0.1{\mu}A$, and compared with result of two dimensional simulation. Since results between this model and 2D simulation are good agreement, threshold voltage shift is investigated for channel dimension and doping concentration of junctionless CSG MOSFET. As a result, threshold voltage shift increases for large channel radius and oxide thickness. It is resultingly shown that threshold voltage increases for the large difference of doping concentrations between source/drain and channel.
Keywords
junctionless; cylindrical surrounding-gate MOSFET; threshold voltage shift; channel radius;
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