• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.15-19
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• 2003

In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. Also the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and 35A/$\textrm{cm}^2$, respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and 100A/$\textrm{cm}^2$, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.10
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• pp.2038-2040
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• 2009

This paper studies the state estimation problem for the current of DC/DC boost converters with parasitic inductor resistance. The parasitic resistance increases the system uncertainty when the output load variation occurs. In order to enhance the observation performance of the Luenberger observer this paper includes the integral of the estimation error signal to the estimation algorithm. By using the proposed PI observer the converter current signal is successfully reconstructed with the voltage measurement regardless of the load uncertainty. Computer simulation has been carried out by using Simulink/Sim Power System. Simulation results show the proposed method maintains robust estimation performance against the model uncertainty.

• Parasites, Hosts and Diseases
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• v.54 no.4
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• pp.407-414
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• 2016

Malaria remains a serious public health problem in Shandong Province, China; therefore, it is important to explore the characteristics of the current malaria prevalence situation in the province. In this study, data of malaria cases reported in Shandong during 2012-2014 were analyzed, and Plasmodium species were confirmed by smear microscopy and nested-PCR. A total of 374 malaria cases were reported, 80.8% of which were reported from 6 prefectures. Of all cases, P. falciparum was dominant (81.3%), followed by P. vivax (11.8%); P. ovale and P. malariae together accounted for 6.4% of cases. Notably, for the first time since 2012, no indigenous case had been reported in Shandong Province, a situation that continued through 2014. Total 95.2% of cases were imported from Africa. The ratio of male/female was 92.5:1, and 96.8% of cases occurred in people 20-54 years of age. Farmers or laborers represented 77.5% of cases. No significant trends of monthly pattern were found in the reported cases. All patients were in good condition after treatment, except for 3 who died. These results indicate that imported malaria has increased significantly since 2012 in Shandong Province, especially for P. falciparum, and there is an emergence of species diversity.

• ETRI Journal
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• v.15 no.3
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• Proceedings of the Korea Society for Industrial Systems Conference
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• 2002.06a
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• pp.195-199
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• 2002

This paper describes the effect of substrate back bias of CMOS Inverter. When the substrate back bias applied in body, the MOS transistor threshold voltage increased and drain saturation current decreased. The back gate reverse bias or substrate bias has been widely utilized and the following advantage has suppressing subthreshold leakage, lowering parasitic junction capacitance, preventing latch up or parasitic bipolar transistor, etc. When the reverse voltage applied substrate, this paper stimulated the propagation delay time CMOS inverter.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1607-1610
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• 2007

The measurement technology of the electrical and optical properties of CCFL and EEFL for LCD-BLU is investigated. The lamp current and voltage are affected by the leakage of parasitic capacitance. The methods using the photometer and the integrating sphere are compared to determine the lamp efficiency.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.2
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• pp.49-53
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• 2005

The current drive in a MOSFET is limited by the intrinsic channel resistance. All other parasitic elements in a device structure perform significant functions leading to degradation in the device performance. These other resistances must be less than 10$\%$-20$\%$ of the channel resistance. To meet the necessary requirements, the methodology of separation and quantification of those resistances should be investigated. In this paper, we developed an extraction method for the resistances using calibrated TCAD simulation. The resistance of the extension region is also partially determined by the formation of a surface accumulation region that gathers below the gate in the tail region of the extension profile. This resistance is strongly affected by the abruptness of the extension profile because the steeper the profile is, the shorter this accumulation region will be.

• Journal of Korea Association of Health Promotion
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• v.1 no.1
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• pp.26-32
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• 2003

The current status and future prospects of parasitic infections in Korea is briefly reviewed. Soil-transmitted helminth infections including ascariasis, trichuriasis, and hookworm infections decreased remarkably. owing to the national control activities excuted by the Korea Association of Health Promotion(formerly Korea Association of parasite Eradication) using mass heath education. Important recent trends include reemergence of vivax malaria since 1993, persistence of food-borne trematode infections including clonorchiasis and intestinal trematode infections, increased detection of zoonotic parasitosis, close-up of infection with opportunistic parasites including cryptosporidiosis, toxoplasmosis, and pneumosytosis, increase of imported tropical infectious disease, appearance of new parasitic disease such as gymnophalloidiasis, and increase of accidental infections with free-living amoebae. These trends represent greatly changed overall patterns of parasitic infections in Korea.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.4
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• pp.384-392
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• 2003

In this study, the electromagnetic coupling through a narrow transverse slit in the upper wall of a parallel-plate waveguide(PPW) covered by a dielectric slab with a nearby conducting strip on the slab is considered. Two contrastive coupling phenomena, cavity-type and parasitic-type, observed in the geometry have been distinguished by differences in the resonant strip lengths and offset positions, induced strip current, radiation pattern, frequency bandwidth, and electromagnetic field distributions near the coupling slit.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.16-25
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• 2002

This paper presents a methodology and application for extracting parasitic inductances in a multi-level interconnect semiconductor structure by a numerical technique. In order to calculate the parasitic inductances, the distrubution of electric potential and current density in the metal lines are calculated by finite element method (FEM). Thereafter, the magneto-static energy caused by the current density in metal lines was calculated. The result of simulation is compared with the result of Grover equation about analytic simple structures, and 4 bit ROM array with a dimension of $13{\times}10.25{\times}8.25{\mu}m^3$ was simulated to extract the parasitic inductnaces. In this calculation, 6,358 nodes with 31,941 tetrahedra were used in ULTRA 10 workstation. The total CPU time for the simulation was about 150 seconds, while the memory size of 20 MB was required.