[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/TEEM.2003.4.2.015

A New EST with Dual Trench Gate Electrode (DTG-EST)

Kim, Dae-Won (Department of Electrical Engineering, Korea University)
Sung, Man-Young (Department of Electrical Engineering, Korea University)
Kang, Ey-Goo (Department of Electronic Engineering, Far East University)

Publication Information

Transactions on Electrical and Electronic Materials / v.4, no.2, 2003 , pp. 15-19 More about this Journal

Abstract

In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. Also the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and 35A/ $\textrm{cm}^2$ , respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and 100A/ $\textrm{cm}^2$ , respectively.

Keywords

Dual trench gate; EST; Snap-back effect; Parasitic thyristor; FBSOA;

Citations & Related Records

Reference

1	E. G. Kang, S. H. Moon, and M. Y. Sung, 'New trench electrode IGBT having superior electhcal characteristics for power IC system', Microelectronics Journal, Vol. 32, No. 8, p. 641, 2001 DOI ScienceOn
2	E. G. Kang, S. H. Moon, and M. Y. Sung, 'Simulation of a new lateral trench IGBT employing effective p+ diverter for improving latch up characteristics', Microelectronics Journal, Vo1. 32, No.9, P.749, 2001 DOI ScienceOn
3	S. H. Moon, E. G. Kang, and M. Y. Sung, 'A latch up immunized lateral trench IGBT with p+ diverter structure for smart power IC', J. of KIEEME(inKorea), Vol. 14, No. 7, p. 546, 2001
4	E. G. Kang, S. H. Moon, and M. Y. Sung, 'LIGBT with dual cathode for improving breakdown charactehstics', Trans. on EEM, Vol. 1, No. 4, p. 16, 2000
5	E. G. Kang, S. H. Moon, and M. Y. Sung, 'Simulation of a novel lateral trench electrode IGBT with improved latch up and forward blocking characteristics', Trans. on EEM, Vol. 2, No. 1, p. 32, 2001
6	S. Sawant and B. J. Baliga, 'The new wide SOA DC EST structure with diode diverter' ISPSD99, p. 173, 1999
7	N. Iwamuro, M. S. Shekar, and B. j. Baligar, 'A study of ESTs short circuit SOA', Proc. ISPSD, P. 71, 1993
8	M. S. Shekar, B. J. Baligar, M. Nandakumar, S. Tandon, and A. Reisman, 'High voltage current saturation in emitter switched thyristors' IEEE Eletron Device Lett., Vol. 12, p. 227, 1991 DOI ScienceOn
9	B. J. Baligar, 'The MOS gated emitter switched thyristor', IEEE Electron Device Lett., Vol. 11, p. 75, 1990 DOI ScienceOn
10	N. Iwamuro, A. Okamoto, S. Tagumi, and H. Motoyama, 'Forward biased safe operating area of emitter switched thyhstor', IEEE Trans. on Electron Devices, Vol. 42, p. 334, 1995 DOI ScienceOn