The Delay time of CMOS inverter gate cell for design on digital system

디지털 시스템설계를 위한 CMOS 인버터게이트 셀의 지연시간

  • 여지환 (대구대학교 공과대학 정보통신공학부)
  • Published : 2002.06.01

Abstract

This paper describes the effect of substrate back bias of CMOS Inverter. When the substrate back bias applied in body, the MOS transistor threshold voltage increased and drain saturation current decreased. The back gate reverse bias or substrate bias has been widely utilized and the following advantage has suppressing subthreshold leakage, lowering parasitic junction capacitance, preventing latch up or parasitic bipolar transistor, etc. When the reverse voltage applied substrate, this paper stimulated the propagation delay time CMOS inverter.

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