Proceedings of the Korea Society for Industrial Systems Conference (한국산업정보학회:학술대회논문집)
- 2002.06a
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- Pages.195-199
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- 2002
The Delay time of CMOS inverter gate cell for design on digital system
디지털 시스템설계를 위한 CMOS 인버터게이트 셀의 지연시간
Abstract
This paper describes the effect of substrate back bias of CMOS Inverter. When the substrate back bias applied in body, the MOS transistor threshold voltage increased and drain saturation current decreased. The back gate reverse bias or substrate bias has been widely utilized and the following advantage has suppressing subthreshold leakage, lowering parasitic junction capacitance, preventing latch up or parasitic bipolar transistor, etc. When the reverse voltage applied substrate, this paper stimulated the propagation delay time CMOS inverter.
Keywords