• ETRI Journal
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• v.38 no.4
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• pp.645-653
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• 2016

This paper demonstrates the performance of a metal-substrate power module with multiple fabricated chips for a high current electrical application, and evaluates the proposed module using a 1.5-kW sinusoidal brushless direct current (BLDC) motor. Specifically, the power module has a hybrid structure employing a single-layer heat-sink extensible metal board (Al board). A fabricated motor driver IC and trench gate DMOSFET (TDMOSFET) are implemented on the Al board, and the proper heat-sink size was designed under the operating conditions. The fabricated motor driver IC mainly operates as a speed controller under various load conditions, and as a multi-phase gate driver using an N-ch silicon MOSFET high-side drive scheme. A fabricated power TDMOSFET is also included in the fabricated power module for three-phase inverter operation. Using this proposed module, a BLDC motor is operated and evaluated under various pulse load tests, and our module is compared with a commercial MOSFET module in terms of the system efficiency and input current.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1251-1254
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• 2006

A novel a-Si TFT integrated gate driver circuit using multi-thread driving has been developed. The circuit consists of two independent shift registers alternating between the two mode, "wake" and "sleep". The degradation of the circuit is retarded since the bias stress is removed during the sleep mode. It has been successfully integrated in 14.1-in. XGA LCD Panel, showing enhanced stability.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.3
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• pp.201-206
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• 2019

This study presents the design and experimental result of a GaN-based DC-DC converter with an integrated gate driver. The GaN device is attractive to power electronic applications due to its superior device performance. However, the switching loss of a GaN-based power converter is susceptible to the common source inductance, and converter efficiency is severely degraded with a large loop inductance. The objective of this study is to achieve high-efficiency power conversion and the highest power density using a multiphase integrated half-bridge GaN solution with minimized loop inductance. Before designing the converter, several GaN and Si devices were compared and loss analysis was conducted. Moreover, the impact of common source inductance from layout parasitic inductance was carefully investigated. Experimental test was conducted in buck mode operation at 48 -12 V, and results showed a peak efficiency of 97.8%.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.172-175
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• 2005

a-Si TFT는 TFT-LCD의 화소 스위칭(swiching) 소자로 폭넓게 이용되고 있다. 현재는 a-Si을 이용하여 gate drive IC를 기판에 집적하는 기술이 연구, 적용되고 있는데 이때 가장 큰 제약은 문턱 전압의 이동이다. 펄스(pulse)형태로 인가되는 gate 전압에 의한 문턱 전압 이동은 a-Si:H gate에 인가되는 펄스의 크기, duty cycle, drain pulse의 크기 및 동작 온도에 기인하며 실험결과를 통해 입증된다. 초기의 DC Stress 측정 Data를 이용하여 문턱전압이동을 모델링/시뮬레이션한 결과 a-Si:H gate 회로설계 및 펄스 조건에 따라 stress시간에 따른 gate의 출력 파형 예측이 가능하고 상온에서 Von=21V를 인가한 결과, 약 4년후에서 시프트레지스터 출력 파형이 열화되기 시작한다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1029-1032
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• 2005

A 262K-color QVGA LTPS AMLCD was developed. This panel has integrated gate driver and data multiplexer (1:3) by p_Si LTPS TFT process. The commercialized driver IC was adopted to implement this display. Fine image quality, low powerconsumption and cost-efficiency feature make the panel be suitable for mobile application.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.52-58
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• 2006

Single-electron transistor (SET)-based logic cells and SET/FET hybrid integrated circuits have been fabricated on SOI chips. The input-output voltage transfer characteristic of the SET-based complementary logic cell shows an inverting behavior where the output voltage gain is estimated to be about 1.2 at 4.2K. The SET/FET output driver, consisting of one SET and three FETs, yields a high voltage gain of 13 and power amplification with a wide-range output window for driving next circuit. Finally, the SET/FET literal gate for a multi-valued logic cell, comprising of an SET, an FET and a constant-current load, displays a periodic voltage output of high/low level multiple switching with a swing as high as 200mV. The multiple switching functionality of all the fabricated logic circuits could be enhanced by utilizing a side gate incorporated to each SET component to enable the phase control of Coulomb oscillations, which is one of the unique characteristics of the SET-based logic circuits.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.205-207
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• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.944-947
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• 2005

Highly stable gate driver circuit using a-Si TFT has been developed. The circuit has dual-pull down structure, in which bias stress to the TFTs is relieved by alternating applied voltage. The circuit has been successfully integrated in 4-in. QVGA and 14-in. XGA TFT-LCD with a normal a-Si process, which are stable for over 2,000 hours at $60^{\circ}C$. The enhancement of stability of the circuit is attributed to retarded degradation of pull-down TFTs by AC driving.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.10a
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• pp.286-290
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• 2001

This paper presents a full-digital low-level controller for a robotic material transfer system which has been developed for a computer-integrated manufacturing model plant. Compared to conventional analog or hybrid type controllers in current industrial environments, this controller system has some advantages such as strong noise-immunity, easy control algorithm implementation, etc The servo-controller consists of two modules, a position controller and a DC servo motor driver. The position controller operates position feedback routines by receiving position encoder data and sending control outputs to the driver. The position controller is implemented in a full-digital way using a recently introduced microcontroller. The DC servomotor driver controls speeds and torques. The driver consists of a micro-controller and insulated-gate-bipolar-transistors (IGBT). The micro-controller provides control signals, and the IGBT's amplifies the control signals and sends them to the motor.

• Journal of Information Display
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• v.10 no.1
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit