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Single-Electron Logic Cells and SET/FET Hybrid Integrated Circuits  

Kim, S.J. (Dept. of Physics & Institute for NanoScience & Technology, Chungbuk National University)
Lee, C.K. (Dept. of Physics & Institute for NanoScience & Technology, Chungbuk National University)
Lee, J.U. (Dept. of Physics & Institute for NanoScience & Technology, Chungbuk National University)
Choi, S.J. (Dept. of Physics & Institute for NanoScience & Technology, Chungbuk National University)
Hwang, J.H. (Dept. of Physics & Institute for NanoScience & Technology, Chungbuk National University)
Lee, S.E. (Dept. of Physics & Institute for NanoScience & Technology, Chungbuk National University)
Choi, J.B. (Dept. of Physics & Institute for NanoScience & Technology, Chungbuk National University)
Park, K.S. (DRAM Process Architecture Team, Memory Division, SAMSUNG Electronics Co.,Ltd.)
Lee, W.H. (FLASH Device Engineering team, HYNIX Semiconductor Inc.)
Paik, I.B. (Electronics and Telecommunications Research Institute)
Kang, J.S. (R&D Center, LG Philips LCD Inc.)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.6, no.1, 2006 , pp. 52-58 More about this Journal
Abstract
Single-electron transistor (SET)-based logic cells and SET/FET hybrid integrated circuits have been fabricated on SOI chips. The input-output voltage transfer characteristic of the SET-based complementary logic cell shows an inverting behavior where the output voltage gain is estimated to be about 1.2 at 4.2K. The SET/FET output driver, consisting of one SET and three FETs, yields a high voltage gain of 13 and power amplification with a wide-range output window for driving next circuit. Finally, the SET/FET literal gate for a multi-valued logic cell, comprising of an SET, an FET and a constant-current load, displays a periodic voltage output of high/low level multiple switching with a swing as high as 200mV. The multiple switching functionality of all the fabricated logic circuits could be enhanced by utilizing a side gate incorporated to each SET component to enable the phase control of Coulomb oscillations, which is one of the unique characteristics of the SET-based logic circuits.
Keywords
Silicon single-electron transistor(SET); SET complementary logic cell; SET output driver; SET/FET hybrid integrated circuit; SET/FET literal gate; SET/FET multi-functional logic cell;
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